CN114783907B - Silicon wafer reaction equipment - Google Patents
Silicon wafer reaction equipment Download PDFInfo
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- CN114783907B CN114783907B CN202210301549.9A CN202210301549A CN114783907B CN 114783907 B CN114783907 B CN 114783907B CN 202210301549 A CN202210301549 A CN 202210301549A CN 114783907 B CN114783907 B CN 114783907B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to silicon wafer reaction equipment which comprises an air inlet part, a lifting part and a cavity, wherein the air inlet part comprises a spiral air inlet pipe, the spiral air inlet pipe is arranged in the cavity, the lifting part is connected with the air inlet part to control the spiral air inlet pipe to lift in the cavity, the main body of the spiral air inlet pipe is constructed into a symmetrical structure formed by a plurality of arc-shaped parts, the arc-shaped parts have the same circle center, every two arc-shaped parts are symmetrical, the symmetrical arc-shaped parts are contacted to form an air homogenizing part, air inlet holes are formed in the arc-shaped parts and face the circle centers of the arc-shaped parts. The invention can improve the uniformity distribution of the gas around the silicon wafer in the silicon wafer reaction equipment and can adjust the gas concentration.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to silicon wafer reaction equipment.
Background
For the silicon wafer reaction equipment in the prior art, the air inlet is arranged at a fixed position at the center of the top of the cavity to realize vertical air inlet, the uniformity and the air inlet position of air in the cavity are determined by theoretical calculation, and the uniformity and the air inlet position are adjusted by a vacuum air pumping system and the flow of the introduced air. The relative position of the air inlet and the silicon wafer can influence the uniformity and concentration of the gas on the surface of the silicon wafer, so that the process result is influenced, and the uniformity and concentration of the gas can not meet the requirement only by adjusting the size of the flow of the gas and the vacuum pumping system. In addition, for different process requirements, different requirements may also need to be provided for the position of the gas inlet, and fixing the position of the gas inlet cannot ensure that optimal gas uniformity and concentration are obtained. As the requirements for gas uniformity and concentration accuracy in advanced semiconductor processing become more stringent, how to ensure optimal uniformity and concentration of the process gas becomes a critical issue.
Disclosure of Invention
The invention aims to provide a silicon wafer reaction device, which is used for improving the uniformity distribution of gas in the silicon wafer reaction device and adjusting the gas concentration.
The purpose of the present invention is achieved by the following technical means. According to the silicon wafer reaction equipment provided by the invention, the silicon wafer reaction equipment comprises an air inlet part, a lifting part and a cavity, wherein the air inlet part comprises a spiral air inlet pipe, the spiral air inlet pipe is arranged in the cavity, the lifting part is connected with the air inlet part to control the spiral air inlet pipe to lift in the cavity, the main body of the spiral air inlet pipe is constructed into a symmetrical structure formed by a plurality of arc-shaped parts, the arc-shaped parts have the same circle center, every two arc-shaped parts are symmetrical, the symmetrical arc-shaped parts are contacted to form an air homogenizing part, and air inlet holes are formed in the arc-shaped parts and face the circle centers of the arc-shaped parts.
In some embodiments, the body is formed by a plurality of arcuate portions connected, the asymmetric arcuate portions having different arc lengths in the plurality of arcuate portions.
In some embodiments, the helical air intake tube further comprises a first air intake port and a second air intake port, both of which communicate with the body.
In some embodiments, the air intake further comprises a connecting tube and a sealing joint connecting the connecting tube with the helical air intake tube.
In some embodiments, the connection pipe includes a main pipe, a first branch pipe, and a second branch pipe, the main pipe communicates with the first branch pipe and the second branch pipe, respectively, the first branch pipe communicates with the first air inlet port of the spiral air inlet pipe through the sealing joint, and the second branch pipe communicates with the second air inlet port of the spiral air inlet pipe through the sealing joint.
In some embodiments, the sealing joint includes a sealing ring and a joint body, the sealing ring is sleeved on the outer surface of the first air inlet port and the outer surface of the first branch pipe, a first end of the joint body is sleeved on the outer surface of the first air inlet port, a second end of the joint body is sleeved on the outer surface of the first branch pipe, and the joint body covers the sealing ring.
In some embodiments, the silicon wafer reaction apparatus further includes an upper cover plate covering the top of the cavity.
In some embodiments, the silicon wafer reaction equipment further includes a sealing assembly, a through hole is formed in the upper cover plate, the main pipe penetrates through the through hole, the sealing assembly includes a flange, a first spacer ring, a second spacer ring, a first sealing ring and a second sealing ring, the flange, the first spacer ring, the second spacer ring, the first sealing ring and the second sealing ring are all sleeved on the main pipe, the flange is fixed to the upper surface of the upper cover plate, and the first spacer ring, the second spacer ring, the first sealing ring and the second sealing ring are all arranged in the through hole.
In some embodiments, in the through hole, a lower surface of the flange is in abutting contact with an upper surface of the first spacer ring, a lower surface of the first spacer ring is in abutting contact with an upper surface of the first seal ring, a lower surface of the first seal ring is in abutting contact with an upper surface of the second spacer ring, and a lower surface of the second spacer ring is in abutting contact with an upper surface of the second seal ring.
In some embodiments, the air inlet further comprises a flexible pipe, a first connector and a second connector, wherein a first end of the flexible pipe is connected with the ventilation pipeline, a second end of the flexible pipe is connected with a first end of the first connector, a second end of the first connector is connected with a first end of the second connector, and a second end of the second connector is connected with the main pipe.
The beneficial effects of the invention at least comprise:
1. according to the invention, the lifting part is arranged to adjust the height of the spiral air inlet pipe from the surface of the silicon wafer in the cavity, so that the concentration of gas around the silicon wafer is adjusted.
2. The main body of the spiral air inlet pipe is constructed into a symmetrical structure formed by a plurality of arc-shaped parts, wherein the arc-shaped parts have the same circle center, every two arc-shaped parts are symmetrical, the arc-shaped parts can be contacted to form a plurality of air homogenizing parts, a plurality of air inlet holes are uniformly arranged on the arc-shaped parts and face the circle centers of the arc-shaped parts, process gases can be mixed in a counter-flushing mode in the area between the arc-shaped parts, the flow rate of the process gases is reduced, and the uniform distribution of the gas around a silicon wafer in the cavity is improved.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are specifically described below with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic perspective view of a silicon wafer reaction apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic perspective view of an air intake according to an embodiment of the present invention;
FIG. 3 is a schematic structural view of a sealing joint according to an embodiment of the present invention;
fig. 4 is a schematic structural view of a seal assembly according to an embodiment of the present invention.
Detailed Description
To further illustrate the technical means of the present invention, the following detailed description of the embodiments of the silicon wafer reaction apparatus according to the present invention is provided with reference to the accompanying drawings and preferred embodiments.
As shown in fig. 1, the silicon wafer reaction equipment of the present invention includes an air inlet portion 1, a lifting portion 2 and a cavity 3, wherein the air inlet portion 1 is used for introducing a process gas (for example, nitrogen gas) into the cavity 3, the air inlet portion 1 includes a spiral air inlet pipe 11, the spiral air inlet pipe 11 is disposed in the cavity 3, the lifting portion 2 is any component capable of adjusting height, the lifting portion 2 is connected with the air inlet portion 1 to control the spiral air inlet pipe 11 to lift in the cavity 3, so as to adjust the height of the spiral air inlet pipe 11 from the surface of a silicon wafer in the cavity 3, and thus, the adjustment of the gas concentration on the surface of the silicon wafer can be achieved. When it is detected that the gas concentration around the silicon wafer is low, the spiral gas intake pipe 11 can be lowered in distance from the surface of the silicon wafer by the elevating section 2, so that the gas concentration around the silicon wafer can be increased, and vice versa. The cavity 3 is configured to be rectangular, but it is understood that the shape of the cavity 3 is not particularly limited by the present invention, and in one or more other embodiments, the shape of the cavity 3 may also be prismatic or cylindrical. According to the invention, the lifting part 2 is arranged for adjusting the height of the spiral air inlet pipe 11 from the surface of the silicon wafer in the cavity 3, so that the concentration of gas around the silicon wafer is adjusted.
As shown in fig. 2, the main body 112 of the spiral gas inlet pipe 11 according to the present invention is configured to be a symmetrical structure formed by a plurality of arc-shaped portions, wherein the plurality of arc-shaped portions have the same center, each two of the plurality of arc-shaped portions are symmetrical, the plurality of symmetrical arc-shaped portions can contact to form a plurality of gas homogenizing portions, a plurality of gas inlet holes 111 are uniformly formed on the plurality of arc-shaped portions, the gas inlet holes 111 face the centers of the plurality of arc-shaped portions, the process gas can be mixed in a gas homogenizing zone between the plurality of gas homogenizing portions in a counter-flushing manner, the flow rate of the process gas is reduced, and the uniform distribution of the gas around the silicon wafer in the chamber 3 is improved.
Specifically, as shown in fig. 2, the spiral intake pipe 11 of the present invention further includes a first intake port 113 and a second intake port 114, and both the first intake port 113 and the second intake port 114 are communicated with the main body 112. The main body 112 includes a first arc portion a, a second arc portion b, a third arc portion c, a fourth arc portion d, a fifth arc portion e, and a sixth arc portion f, and the main body 112 is integrally formed, wherein the first arc portion a, the second arc portion b, the third arc portion c, the fourth arc portion d, the fifth arc portion e, and the sixth arc portion f have the same center, the first arc portion a is connected to the second arc portion b, the second arc portion b is connected to the third arc portion c, the third arc portion c is connected to the fourth arc portion d, the fourth arc portion d is connected to the fifth arc portion e, and the fifth arc portion e is connected to the sixth arc portion f. The arc length of the first arc-shaped part a is greater than that of the second arc-shaped part b, and the arc length of the second arc-shaped part b is greater than that of the third arc-shaped part c. The first gas homogenizing part, the second gas homogenizing part and the third gas homogenizing part have the same symmetry axis. It is understood that the plurality of air intake holes on the arc portions symmetrical to each other are also symmetrically disposed, respectively.
Because the process gas respectively enters the main body 112 from the first gas inlet port 113 and the second gas inlet port 114, the process gas can realize opposed mixing in the main body 112, and the flow rate of the gas is reduced, and because the arc-shaped symmetrical structure of the spiral gas inlet pipe can form the first gas homogenizing portion, the second gas homogenizing portion and the third gas homogenizing portion, the gas ejected from the gas inlet holes on the first arc-shaped portion a and the sixth arc-shaped portion f can be ejected on the side surface of the second gas homogenizing portion (the surface close to one side of the gas inlet holes on the first arc-shaped portion a and the sixth arc-shaped portion f), so that the gas ejected from the first arc-shaped portion a and the sixth arc-shaped portion f is uniformly distributed in the gas homogenizing area between the first gas homogenizing portion and the second gas homogenizing portion. The gas ejected from the gas inlet holes on the second arc-shaped part b and the fifth arc-shaped part e is sprayed on the side surface of the third gas uniforming part (the surface close to one side of the gas inlet holes on the second arc-shaped part b and the fifth arc-shaped part e), so that the gas ejected from the gas inlet holes on the second arc-shaped part b and the fifth arc-shaped part e is uniformly distributed in the gas uniforming area between the second gas uniforming part and the third gas uniforming part. The gas sprayed from the gas inlet holes on the third arc-shaped part c and the fourth arc-shaped part d can be sprayed to the closed area formed by the third gas homogenizing part, so that the gas sprayed from the gas inlet holes on the third arc-shaped part c and the fourth arc-shaped part d can be uniformly mixed in the gas homogenizing area formed by the third gas homogenizing part. It is to be understood that the number of the gas uniforming portions formed by the spiral intake pipe is not particularly limited in the present invention.
As shown in fig. 1, in one or more other embodiments, the silicon wafer reaction apparatus of the present invention further includes an upper cover plate 4, and the upper cover plate 4 covers the top of the chamber 3. The outer wall of the cavity 3 is fixedly connected with the upper cover plate 4, in one or more embodiments, the outer wall of the cavity 3 is fixedly connected with the upper cover plate 4 through a screw, and in some other embodiments, the outer wall of the cavity 3 is fixedly connected with the upper cover plate 4 through a buckle.
As shown in fig. 2, in one or more embodiments, the air inlet portion 1 further includes a connecting pipe 12 and a sealing joint 13, the sealing joint 13 connects the connecting pipe 12 and the spiral air inlet pipe 11, wherein the connecting pipe 12 includes a main pipe 121, a first branch pipe 122 and a second branch pipe 123, and the first branch pipe 122 and the second branch pipe 123 have the same structure. The main pipe 121 is vertically arranged, the first branch pipe 122 and the second branch pipe 123 are horizontally arranged, the bottom end of the main pipe 121 is divided into two horizontal branches, the two horizontal branches are respectively communicated to the first branch pipe 122 and the second branch pipe 123, the first branch pipe 122 is communicated with the first air inlet port 113 of the spiral air inlet pipe 11, and the second branch pipe 123 is communicated with the second air inlet port 114 of the spiral air inlet pipe 11. The lifting part 2 may include a jig which is clamped on the main pipe 121 of the connection pipe 12 and is driven to lift by a driving structure controlling the lifting part 2, so that the lifting of the spiral inlet pipe 11 can be realized.
Specifically, as shown in fig. 3, the sealing joint 13 connects the first branch pipe 122 with the first intake port 113, and connects the second branch pipe 123 with the second intake port 114, and the structure of the sealing joint will be described by taking the example where the sealing joint 13 connects the first branch pipe 122 with the first intake port 113. The sealing joint 13 includes a sealing ring 131 and a joint body 132, and the sealing ring 131 is fitted over the outer surface of the first intake port 113 and the outer surface of the first branch pipe 122 for sealing. A first end of the joint main body 132 is fitted over an outer surface of the first air inlet port 113, a second end of the joint main body 132 is fitted over an outer surface of the first branch pipe 122, and the joint main body 132 covers the sealing rings 131 fitted over the outer surface of the first air inlet port 113 and the outer surface of the first branch pipe 122, so that the joint main body 132 serves a connecting function and the sealing rings 131 serve a sealing function. The joint main body 132 may be fixed to the first branch pipe 122 and the first air intake port 113 by screws or snaps.
As shown in fig. 1, 2 and 4, the silicon wafer reaction equipment of the present invention further includes a sealing assembly 5, a through hole 41 is formed on the upper cover plate 4, the main pipe 121 of the connecting pipe 12 passes through the through hole 41, the sealing assembly 5 includes a flange 51, a first spacer ring 52, a second spacer ring 53, a first sealing ring 54 and a second sealing ring 55, the flange 51, the first spacer ring 52, the first sealing ring 54, the second spacer ring 53 and the second sealing ring 55 are sequentially sleeved on the main pipe 121 from top to bottom, the flange 51 is fixed on the upper surface of the upper cover plate 4 through a screw, the flange 51 can play a guiding role in a process that the lifting part 2 drives the main pipe 121 to lift, and the first spacer ring 52, the second spacer ring 53, the first sealing ring 54 and the second sealing ring 55 are all disposed in the through hole 41 for sealing the main pipe 121 in a process of lifting in the through hole 41.
Specifically, the lower surface of the flange 51 is in abutting contact with the upper surface of the first spacer ring 52, the lower surface of the first spacer ring 52 is in abutting contact with the upper surface of the first sealing ring 54, the lower surface of the first sealing ring 54 is in abutting contact with the upper surface of the second spacer ring 53, the lower surface of the second spacer ring 53 is in abutting contact with the upper surface of the second sealing ring 55, the flange 51 can press the first sealing ring 54 and the second sealing ring 55 tightly through the first spacer ring 52 and the second spacer ring 53, the first spacer ring 52 is used for separating the flange 51 from the first sealing ring 54, so that the flange 51 is prevented from damaging the first sealing ring 54, and the second spacer ring 53 is used for separating the first sealing ring 54 from the second sealing ring 55, so that the first sealing ring 54 is prevented from directly contacting the second sealing ring 55.
As shown in fig. 1, the silicon wafer reaction apparatus of the present invention further includes a stage 6 for placing a silicon wafer, the stage 6 is configured in a circular shape, and the stage 6 is disposed inside the chamber 3.
As shown in fig. 2, the air inlet part 1 further includes a flexible pipe 14, a first connecting member 15 and a second connecting member 16, wherein a first end of the flexible pipe 14 is used for connecting an air inlet pipeline, and the present invention can compensate the movement position during the lifting process of the main pipe 121 by using the flexible pipe 14. The first end of the first connecting piece 15 is connected with the second end of the flexible pipe 14, the second end of the first connecting piece 15 is connected with the first end of the second connecting piece 16, and the second end of the second connecting piece 16 is connected with the top end of the main pipe 121. The flexible tube 14 may preferably be a vacuum bellows, and in some other embodiments, other forms of vacuum hose may be used. The first connector 15 is preferably a clip for securing a tubular and the second connector 16 is preferably a double-clip connector. The spiral inlet 11 is preferably made of quartz, and in some other embodiments, other materials that do not affect the rf plasma may be used. The main pipe 121, the first branch pipe 122, and the second branch pipe 123 are aluminum alloy pipes that are coated with yttrium peroxide, hard anodizing, or the like, and thus prevent metal contamination in the chamber 3.
The use of words such as "including," "comprising," "having," and the like, in connection with the present invention is an open-ended word that refers to "including, but not limited to," and is used interchangeably therewith. The words "or" and "as used herein mean, and are used interchangeably with, the word" and/or, "unless the context clearly dictates otherwise.
The previous description of the disclosed aspects is provided to enable any person skilled in the art to practice the present invention. Various modifications to these aspects will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other aspects without departing from the scope of the invention. Thus, the present invention is not intended to be limited to the aspects shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A silicon wafer reaction device is characterized by comprising an air inlet part, a lifting part and a cavity, wherein the air inlet part comprises a spiral air inlet pipe, the spiral air inlet pipe is arranged in the cavity, the lifting part is connected with the air inlet part to control the spiral air inlet pipe to lift in the cavity, a main body of the spiral air inlet pipe is constructed into a symmetrical structure formed by a plurality of arc-shaped parts, the arc-shaped parts have the same circle center, every two arc-shaped parts are symmetrical, the symmetrical arc-shaped parts are contacted to form an air homogenizing part, air inlet holes are formed in the arc-shaped parts and face the circle centers of the arc-shaped parts; the main body is formed by connecting a plurality of arc-shaped parts, and the asymmetric arc-shaped parts have different arc lengths; the joints between the arc parts are in a tangent form; the process gases can be mixed in an impingement manner in a gas homogenizing zone between a plurality of the gas homogenizing sections to reduce the flow rate of the process gases.
2. The silicon wafer reaction apparatus of claim 1, wherein the helical inlet tube further comprises a first inlet port and a second inlet port, both of the first inlet port and the second inlet port in communication with the body.
3. The silicon wafer reaction apparatus of claim 2, wherein the gas inlet portion further comprises a connecting tube and a sealing joint connecting the connecting tube with the helical gas inlet tube.
4. The silicon wafer reaction apparatus according to claim 3, wherein the connection pipe includes a main pipe, a first branch pipe, and a second branch pipe, the main pipe communicates with the first branch pipe and the second branch pipe, respectively, the first branch pipe communicates with the first air inlet port of the spiral air inlet pipe through the sealing joint, and the second branch pipe communicates with the second air inlet port of the spiral air inlet pipe through the sealing joint.
5. The silicon wafer reaction apparatus of claim 4, wherein the sealing joint comprises a sealing ring and a joint body, the sealing ring is sleeved on the outer surface of the first gas inlet port and the outer surface of the first branch pipe, a first end of the joint body is sleeved on the outer surface of the first gas inlet port, a second end of the joint body is sleeved on the outer surface of the first branch pipe, and the joint body covers the sealing ring.
6. The silicon wafer reaction apparatus of claim 4, further comprising an upper cover plate covering the top of the chamber.
7. The silicon wafer reaction equipment according to claim 6, further comprising a sealing assembly, wherein the upper cover plate is provided with a through hole, the main pipe penetrates through the through hole, the sealing assembly comprises a flange, a first spacer ring, a second spacer ring, a first sealing ring and a second sealing ring, the flange, the first spacer ring, the second spacer ring, the first sealing ring and the second sealing ring are all sleeved on the main pipe, the flange is fixed on the upper surface of the upper cover plate, and the first spacer ring, the second spacer ring, the first sealing ring and the second sealing ring are all arranged in the through hole.
8. The silicon wafer reaction apparatus of claim 7, wherein in the through hole, a lower surface of the flange is in abutting contact with an upper surface of the first spacer ring, a lower surface of the first spacer ring is in abutting contact with an upper surface of the first seal ring, a lower surface of the first seal ring is in abutting contact with an upper surface of the second spacer ring, and a lower surface of the second spacer ring is in abutting contact with an upper surface of the second seal ring.
9. The silicon wafer reaction apparatus of claim 4, wherein the gas inlet further comprises a flexible tube, a first connector, and a second connector, a first end of the flexible tube being connected to a vent line, a second end of the flexible tube being connected to a first end of the first connector, a second end of the first connector being connected to a first end of the second connector, and a second end of the second connector being connected to the main tube.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210301549.9A CN114783907B (en) | 2022-03-24 | 2022-03-24 | Silicon wafer reaction equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210301549.9A CN114783907B (en) | 2022-03-24 | 2022-03-24 | Silicon wafer reaction equipment |
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| CN114783907A CN114783907A (en) | 2022-07-22 |
| CN114783907B true CN114783907B (en) | 2022-10-11 |
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| US20090162262A1 (en) * | 2007-12-19 | 2009-06-25 | Applied Material, Inc. | Plasma reactor gas distribution plate having path splitting manifold side-by-side with showerhead |
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| KR20120080971A (en) * | 2011-01-10 | 2012-07-18 | 엘아이지에이디피 주식회사 | Apparatus for chemical vapor deposition |
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