CN216902834U

CN216902834U - Silicon wafer reaction device

Info

Publication number: CN216902834U
Application number: CN202220639643.0U
Authority: CN
Inventors: 项习飞; 田才忠; 李士昌; 王美玲
Original assignee: Shengjisheng Semiconductor Technology Beijing Co ltd; SGS Ningbo Semiconductor Technology Co Ltd
Current assignee: Shengjisheng Semiconductor Technology Beijing Co ltd; SGS Ningbo Semiconductor Technology Co Ltd
Priority date: 2022-03-22
Filing date: 2022-03-22
Publication date: 2022-07-05
Anticipated expiration: 2032-03-22

Abstract

The utility model relates to a silicon wafer reaction device which comprises a cavity, a silicon wafer, a plurality of air inlet parts and an air inlet channel, wherein the silicon wafer is arranged in the cavity, the air inlet parts are all arranged at the top of the cavity, the inner wall of each air inlet part is a cambered surface, the inner wall of each air inlet part and the silicon wafer have the same circle center, a plurality of air inlet holes are formed in the inner wall of each air inlet part, and the air inlet holes are communicated with the air inlet channel. The utility model can improve the uniformity distribution of the gas in the silicon wafer reaction device.

Description

Silicon wafer reaction device

Technical Field

The utility model relates to the technical field of semiconductor manufacturing, in particular to a silicon wafer reaction device.

Background

For silicon wafer reaction device under the prior art, its cavity is the rectangle usually, and air inlet structure sets up on the inner wall at the top of cavity, and air inlet structure also is the rectangle usually, and because the technology demand, silicon wafer is made into circular, and this can lead to the inlet vent on every air inlet structure all inequality apart from silicon wafer center distance to lead to the gas homogeneity in the silicon wafer reaction device relatively poor, the nitrogen doping concentration result of silicon wafer is not the concentric circles and distributes. In order to solve the existing problems, it is necessary to provide a silicon wafer reaction apparatus with improved uniformity of gas distribution for improving the uniformity distribution of gas in the silicon wafer reaction apparatus and optimizing the result of nitrogen doping concentration.

SUMMERY OF THE UTILITY MODEL

The utility model aims to provide a silicon wafer reaction device, which is used for improving the uniformity distribution of gas in the silicon wafer reaction device.

The purpose of the present invention is achieved by the following technical means. According to the silicon wafer reaction device provided by the utility model, the silicon wafer reaction device comprises a cavity, a silicon wafer, a plurality of air inlet parts and an air inlet channel, wherein the silicon wafer is arranged in the cavity, the air inlet parts are all arranged at the top of the cavity, the inner wall of each air inlet part is formed into an arc surface, the inner wall of each air inlet part and the silicon wafer have the same circle center, a plurality of air inlet holes are formed in the inner wall of each air inlet part, and the air inlet holes are communicated with the air inlet channel.

In some embodiments, the plurality of air intake holes all have the same length and shape.

In some embodiments, the diameter of the inner wall of the gas inlet portion is greater than the diameter of the silicon wafer.

In some embodiments, the plurality of air intake holes are each configured at 0-45 ° to the top plane of the cavity.

In some embodiments, the silicon wafer reaction apparatus further includes a buffer tail cavity and an air suction pipeline, a plurality of air outlets are disposed on a side wall of the cavity, and the plurality of air outlets are respectively communicated to the buffer tail cavity through the air suction pipeline.

In some embodiments, the bleed line includes a main path conduit and a plurality of branch conduits, each of the plurality of bleed holes being in communication with a first end of each of the plurality of branch conduits, respectively, a second end of each of the plurality of branch conduits being in communication with a first end of the main path conduit, a second end of the main path conduit being in communication with a first end of the buffer tail cavity, and a second end of the buffer tail cavity being in communication with a bleed device.

In some embodiments, the silicon wafer reaction device further includes a stage, the stage is disposed inside the cavity, the silicon wafer is placed on the stage, and the plurality of air outlets are disposed on the sidewall of the cavity at a position lower than the horizontal height of the stage.

In some embodiments, the plurality of air exit holes are located in a region outside the vertical projection of the stage.

In some embodiments, the silicon wafer reaction apparatus further includes an upper cover plate covering the top of the chamber, and the gas inlet is fixed to the upper cover plate.

The beneficial effects of the utility model at least comprise:

1. the inner wall of the air inlet part is constructed into the arc surface, and the inner wall of the air inlet part and the silicon wafer have the same circle center, so that the direction of an air inlet hole formed in the inner wall of the air inlet part can be opposite to the circle center of the silicon wafer, process gas can flow to the circle center of the silicon wafer immediately after being sprayed out of the air inlet hole, the nitrogen doping concentration is guaranteed to be distributed in a concentric circle mode concentric with the circle center of the silicon wafer, and the uniformity of the gas in the cavity is improved.

2. By configuring each of the plurality of air inlet holes to have the same length and shape, the lengths of the circulation paths of the process gas in the air inlet holes can be the same, the consistency of the air outlet quantity and the speed of each air inlet hole is ensured to the maximum extent, and the uniformity distribution of the gas in the cavity is facilitated.

3. Through setting up the venthole in the position that is less than the microscope carrier, can cooperate process gas's action of gravity for process gas can flow through whole silicon wafer gently, improves the homogeneity distribution of the gaseous on silicon wafer surface.

4. Through setting up buffering tail chamber, and buffering tail chamber is linked together with first venthole, second venthole and third venthole and fourth venthole respectively through the exhaust tube, can prevent effectively through buffering tail chamber that the cavity internal pressure is suddenly changed, avoids the particulate matter in the cavity to raise, improves gaseous homogeneity distribution in the cavity.

The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understandable, the following preferred embodiments are described in detail with reference to the accompanying drawings.

Drawings

FIG. 1 is a schematic structural diagram of a silicon wafer reaction apparatus according to an embodiment of the present invention;

FIG. 2 is a schematic diagram of a cavity and an outlet according to an embodiment of the present invention;

fig. 3 is another schematic structural diagram of a silicon wafer reaction apparatus according to an embodiment of the present invention.

Detailed Description

To further illustrate the technical means of the present invention, the following detailed description of the embodiments of the silicon wafer reaction apparatus according to the present invention is provided with reference to the accompanying drawings and preferred embodiments.

As shown in fig. 1, the silicon wafer reaction apparatus according to the present invention includes a chamber 1, a silicon wafer 2, and a plurality of gas inlet parts 3, and the chamber 1 is configured to be rectangular, but it is understood that the present invention is not particularly limited to the shape of the chamber 1, and in one or more other embodiments, the chamber 1 may also be prismatic or cylindrical. To ensure process requirements, the silicon wafer 2 is configured in a circular shape, and the silicon wafer 2 is disposed at the center of the inside of the chamber 1 and placed on the stage 6. In the drawings, in order to achieve uniformity of gas in the chamber 1, 4 gas inlets 3 are provided, and 4 gas inlets 3 are respectively provided at four side positions of the rectangular chamber 1, but it is understood that the number of gas inlets 3 is not particularly limited in the present invention, and in one or more other embodiments, the number of gas inlets 3 may be other. In a preferred embodiment, each of the plurality of gas inlets 3 is disposed at the top of the chamber 1, the gas inlets 3 are irregular in shape as a whole, the inner wall of the gas inlets 3 communicates with the inner space of the chamber, the inner wall of the gas inlets 3 is configured as a curved surface, and the inner wall of the gas inlets 3 has the same center as the silicon wafer 2, a plurality of gas inlet holes 31 are provided on the inner wall of the gas inlets 3, and the plurality of gas inlet holes 31 communicate with the chamber 1 for introducing a process gas (e.g., nitrogen gas) into the inside of the chamber 1. According to the utility model, the inner wall of the air inlet part 3 is constructed into a cambered surface, and the inner wall of the air inlet part 3 and the silicon wafer 2 have the same circle center, so that the direction of the air inlet hole 31 arranged on the inner wall of the air inlet part 3 can be over against the circle center of the silicon wafer 2, the process gas can flow to the circle center of the silicon wafer 21 immediately after being sprayed out from the air inlet hole 31, the nitrogen doping concentration is ensured to be distributed in a concentric circle mode concentric with the circle center of the silicon wafer 2, and the uniformity of the gas in the cavity 1 is improved.

In one or more embodiments, the silicon wafer reaction apparatus of the present invention further includes a plurality of gas inlet channels (not shown), each of the plurality of gas inlet channels being connected to the gas inlet hole 31. Each of the plurality of air inlet holes 31 has the same length and shape, so that the lengths of the circulation paths of the process gas flows in the air inlet holes 31 are the same, the consistency of the gas output quantity and the speed of each air inlet hole 31 is ensured to the greatest extent, and the uniformity distribution of the gas in the cavity 1 is facilitated.

In one or more embodiments, as shown in fig. 1, the diameter of the arc-shaped inner wall of the air inlet part 3 is larger than that of the silicon wafer 2, and since the size of the silicon wafer 2 is different, the diameter of the arc-shaped inner wall of the air inlet part 3 can be adjusted accordingly, and the diameter of the arc-shaped inner wall of the air inlet part 3 can be adjusted within the range of 100mm to 600 mm.

In one or more embodiments, the air intake holes 31 may be arranged parallel to the top plane of the chamber 1, i.e. the plane in which the air intake part 3 is located. In a preferred embodiment, to prevent the air flow between the respective air intake holes 31 from being collided, each of the air intake holes 31 is configured to be 0 to 45 ° (excluding 0 °) to the top plane of the cavity 1. The present invention further improves the uniformity of the gas in the chamber 1 by configuring each of the gas inlet holes 31 to be 0-45 deg. to the top plane of the chamber 1.

In one or more embodiments, the silicon wafer reaction apparatus of the present invention further includes an upper cover plate (not shown) covering the top of the chamber 1, and the gas inlet 3 is fixed on the upper cover plate, in one or more embodiments, the gas inlet 3 and the upper cover plate may be fixedly connected by a screw, and in some other embodiments, the gas inlet 3 and the upper cover plate may be fixedly connected by a snap. The outer wall of the cavity 1 is fixedly connected with the upper cover plate, in one or more embodiments, the outer wall of the cavity 1 is fixedly connected with the upper cover plate through a screw, and in some other embodiments, the outer wall of the cavity 1 is fixedly connected with the upper cover plate through a buckle.

In one or more embodiments, as shown in fig. 1, the outer wall of the air inlet 3 is configured to be in a shape corresponding to the cavity 1, and since the shape of the cavity 1 is rectangular in fig. 1, the outer wall of the air inlet 3 is also configured to be similar to a rectangle. In one or more embodiments, the present invention provides a plurality of intake portions 3 instead of configuring the intake portions 3 as a whole, which can facilitate the installation of the intake portions 3 and improve the installation efficiency of the intake portions 3.

In one or more embodiments, as shown in fig. 2, a plurality of air outlets 11 are disposed on the sidewall of the cavity 1, and the plurality of air outlets 11 may be uniformly distributed on four sides of the rectangular cavity 1. According to the utility model, the plurality of air outlet holes 11 are formed in the side wall of the cavity 1, the plurality of air outlet holes 11 are uniformly distributed around the cavity 1, and uniform negative pressure is formed around the cavity 1 by the simultaneous work of the plurality of air outlet holes 11, so that the process gas is sucked from the center to the periphery of the cavity 1, and the process gas actually contacting the silicon wafer 3 can be uniformly distributed.

Specifically, as shown in fig. 2, four air outlets 11 may be disposed on the side wall of the cavity 1, which are respectively a first air outlet 111, a second air outlet 112, a third air outlet 113, and a fourth air outlet 114, and the first air outlet 111, the second air outlet 112, the third air outlet 113, and the fourth air outlet 114 are uniformly distributed on the peripheral side wall of the cavity 1. It should be noted that the above only provides a preferred embodiment, and the number and arrangement of the air outlet holes 11 are not limited in the present invention. When the technical scheme of the utility model is implemented, the number and the arrangement mode of the air outlet holes 11 can be adjusted according to actual conditions. Preferably, the first, second, and third

air outlet holes

111, 112, 113, and the fourth air outlet hole 114 have a lower level than that of the stage 6. According to the utility model, the gas outlet 11 is arranged at a position lower than the carrying platform 6, so that the process gas can smoothly flow through the whole silicon wafer 3 under the action of the gravity of the process gas, and the uniformity distribution of the gas on the surface of the silicon wafer 3 is improved.

As shown in fig. 3, in one or more embodiments, the silicon wafer reaction apparatus of the present invention further includes a buffer tail cavity 4, where the buffer tail cavity 4 is a sealed cavity. The first air outlet 111, the second air outlet 112, the third air outlet 113 and the fourth air outlet 114 are respectively communicated with the buffer tail cavity 4 through air extraction pipelines, the buffer tail cavity 4 is communicated with an air extraction device (not shown), and the air extraction device is used for extracting the process gas in the cavity 1. According to the utility model, the buffer tail cavity 4 is arranged, and the buffer tail cavity 4 is respectively communicated with the first air outlet hole 111, the second air outlet hole 112, the third air outlet hole 113 and the fourth air outlet hole 114 through the air pumping pipeline, so that sudden pressure change in the cavity 1 can be effectively prevented through the buffer tail cavity 4, particulate matters in the cavity 1 are prevented from being lifted, and the uniformity distribution of gas in the cavity is improved.

The suction line includes a first branch line 51, a second branch line 52, a third branch line 53, a fourth branch line (not shown), and a main line 54. The first ends of the first branch pipeline 51, the second branch pipeline 52, the third branch pipeline 53 and the fourth branch pipeline are respectively communicated with the first air outlet hole 111, the second air outlet hole 112, the third air outlet hole 113 and the fourth air outlet hole 114, the second ends of the first branch pipeline 51, the second branch pipeline 52, the third branch pipeline 53 and the fourth branch pipeline are communicated with the first end of the main pipeline 54, the second end of the main pipeline 54 is communicated with the first end of the buffer tail cavity 4, and the second end of the buffer tail cavity 4 is communicated with the air extracting device. According to the utility model, the first branch pipeline 51, the second branch pipeline 52, the third branch pipeline 53 and the fourth branch pipeline are respectively communicated with the first air outlet hole 111, the second air outlet hole 112, the third air outlet hole 113 and the fourth air outlet hole 114, so that negative pressure can be formed at the first air outlet hole 111, the second air outlet hole 112, the third air outlet hole 113 and the fourth air outlet hole 114 at the same time, the process gas can uniformly pass through the silicon wafer 3, and the process gas mixed with particles in the cavity 1 can be taken out from multiple directions.

Preferably, a pressure control valve (not shown) is disposed on the air extraction pipeline, and the pressure control valve is electrically connected with the air extraction device. The pressure control valve can adjust the opening and the working state of the air extractor according to the air pressure of the cavity 1, so that the air extraction amount and the air extraction speed of the air extractor are controlled. When the air pressure in the cavity 1 is larger, the pressure control valve can increase the opening to improve the power of the air extracting device, so that the air extracting amount and the air extracting speed of the air extracting device are improved; when the air pressure in the cavity 1 is small, the pressure control valve can reduce the opening to reduce the power of the air pumping device, so that the air pumping amount and the air pumping speed of the air pumping device are reduced. Preferably, a pressure control valve is provided on the main circuit pipe 54. The pressure control valve is provided on the main branch pipe 54, and the first branch pipe 51, the second branch pipe 52, the third branch pipe 53, and the fourth branch pipe can be simultaneously controlled to simultaneously discharge air through the pressure control valve.

Preferably, in one or more embodiments, the gas outlet hole 21 is located in a region outside the vertical projection of the stage 6, that is, when the gas outlet hole 21 and the stage 6 are vertically projected on the bottom of the chamber 1, the gas outlet hole 21 is located outside the projection range of the stage 6. If the gas outlet 21 is located within the projection range of the carrier 6, the negative pressure formed by the gas outlet 21 will make the process gas bypass the edge of the silicon wafer 3 first, and then enter the gas outlet 21 after moving downward, which will cause the gas path of the process gas to be very tortuous, and the carrier 6 will cause a certain buffer effect on the process gas. And gas outlet 21 is located the region beyond the vertical projection of microscope stage 6, then can make the gaseous route of process gas more direct, can directly avoid microscope stage 6, slows down microscope stage 6 to process gas's cushioning effect to effectively form the negative pressure, and make the process gas who mixes the particulate matter can derive in following cavity 1 smoothly.

The use of words such as "including," comprising, "" having, "and the like in connection with the present invention is an open-ended term that refers to and is used interchangeably with" including, but not limited to. The words "or" and "as used herein mean, and are used interchangeably with, the word" and/or, "unless the context clearly dictates otherwise.

The previous description of the disclosed aspects is provided to enable any person skilled in the art to practice the present invention. Various modifications to these aspects will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other aspects without departing from the scope of the utility model. Thus, the present invention is not intended to be limited to the aspects shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. The utility model provides a silicon wafer reaction unit, its characterized in that includes cavity, silicon wafer, a plurality of air inlet portion and inlet channel, the silicon wafer set up in the inside of cavity, a plurality of air inlet portion all set up in the top of cavity, the inner wall of air inlet portion is constructed into the cambered surface, the inner wall of air inlet portion with the silicon wafer has the same centre of a circle, be provided with a plurality of inlet ports on the inner wall of air inlet portion, it is a plurality of the inlet port with inlet channel intercommunication.

2. The silicon wafer reaction device of claim 1, wherein the plurality of inlet holes all have the same length and shape.

3. The silicon wafer reaction apparatus according to claim 1, wherein a diameter of an inner wall of the gas inlet portion is larger than a diameter of the silicon wafer.

4. The silicon wafer reaction apparatus of claim 1, wherein the plurality of gas inlet holes are each configured at 0-45 ° to a top plane of the chamber.

5. The silicon wafer reaction device according to any one of claims 1 to 4, further comprising a buffer tail cavity and a suction pipeline, wherein a plurality of air outlet holes are arranged on the side wall of the cavity body, and the air outlet holes are respectively communicated to the buffer tail cavity through the suction pipeline.

6. The silicon wafer reaction device according to claim 5, wherein the pumping line comprises a main path conduit and a plurality of branch conduits, each of the plurality of gas outlets being in communication with a first end of each of the plurality of branch conduits, respectively, a second end of each of the plurality of branch conduits being in communication with a first end of the main path conduit, a second end of the main path conduit being in communication with a first end of the buffer tail cavity, and a second end of the buffer tail cavity being in communication with a pumping device.

7. The silicon wafer reaction device according to claim 5, further comprising a stage, wherein the stage is disposed inside the chamber, the silicon wafer is placed on the stage, and the plurality of air outlet holes are disposed at a position of the side wall of the chamber lower than the level of the stage.

8. The silicon wafer reaction device of claim 7, wherein the plurality of gas outlet holes are all located in a region outside a vertical projection of the stage.

9. The silicon wafer reaction device according to claim 1, further comprising an upper cover plate covering the top of the chamber, wherein the gas inlet part is fixed to the upper cover plate.