SA515361283B1 - تنظيف أماكن إنتاج الترسيب الكيميائي للبخار - Google Patents

تنظيف أماكن إنتاج الترسيب الكيميائي للبخار

Info

Publication number
SA515361283B1
SA515361283B1 SA515361283A SA515361283A SA515361283B1 SA 515361283 B1 SA515361283 B1 SA 515361283B1 SA 515361283 A SA515361283 A SA 515361283A SA 515361283 A SA515361283 A SA 515361283A SA 515361283 B1 SA515361283 B1 SA 515361283B1
Authority
SA
Saudi Arabia
Prior art keywords
cleaning
cvd
production
spaces
vapor deposition
Prior art date
Application number
SA515361283A
Other languages
English (en)
Inventor
بوب فريدريك
هيرتلين هارالد
Original Assignee
ووكـــر شــيمي ايه جي
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=50349609&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SA515361283(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by ووكـــر شــيمي ايه جي filed Critical ووكـــر شــيمي ايه جي
Publication of SA515361283B1 publication Critical patent/SA515361283B1/ar

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
    • B08B1/12—Brushes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
    • B08B1/14—Wipes; Absorbent members, e.g. swabs or sponges
    • B08B1/143—Wipes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Implements For Floors, Carpets, Furniture, Walls, And The Like (AREA)

Abstract

موضوع الاختراع هو طريقة لتنظيف أماكن الإنتاج لإنتاج السيليكون متعدد البلورات polycrystalline silicon، حيث تحتوي الأماكن على عدد من مفاعلات الترسيب الكيميائي للبخار ) الترسيب الكيميائي للبخار ( CHEMICAL VAPOR DEPOSITION (CVD) ، ويتم التنظيف مرة واحدة على الأقل خلال أسبوعين. من أجل إجراء التنظيف، يتم استخدام سائل تنظيف مائي، أغلفة خارجية من مفاعلات) الترسيب الكيميائي للبخار ( CHEMICAL VAPOR DEPOSITION (CVD)، خطوط أنابيب وأرضيات من مساحات الإنتاج التي يجري تنظيفها.
SA515361283A 2013-04-11 2015-10-10 تنظيف أماكن إنتاج الترسيب الكيميائي للبخار SA515361283B1 (ar)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013206436.5A DE102013206436A1 (de) 2013-04-11 2013-04-11 Reinigung von CVD-Produktionsräumen
PCT/EP2014/055605 WO2014166718A1 (de) 2013-04-11 2014-03-20 Reinigung von cvd-produktionsräumen

Publications (1)

Publication Number Publication Date
SA515361283B1 true SA515361283B1 (ar) 2016-08-09

Family

ID=50349609

Family Applications (1)

Application Number Title Priority Date Filing Date
SA515361283A SA515361283B1 (ar) 2013-04-11 2015-10-10 تنظيف أماكن إنتاج الترسيب الكيميائي للبخار

Country Status (10)

Country Link
US (1) US9962745B2 (ar)
EP (1) EP2984034B1 (ar)
JP (1) JP6105152B2 (ar)
KR (1) KR20150138330A (ar)
CN (1) CN105121342A (ar)
DE (1) DE102013206436A1 (ar)
MY (1) MY171977A (ar)
SA (1) SA515361283B1 (ar)
TW (1) TWI526571B (ar)
WO (1) WO2014166718A1 (ar)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3064130B1 (fr) 2017-03-15 2019-06-07 Valeo Equipements Electriques Moteur Rotor de machine electrique tournante muni de pieces de maintien d'aimants permanents
JP7217720B2 (ja) 2020-03-10 2023-02-03 信越化学工業株式会社 ベースプレートの汚染防止方法
WO2022113460A1 (ja) * 2020-11-27 2022-06-02 株式会社トクヤマ 多結晶シリコンロッド、多結晶シリコンロッドの製造方法および多結晶シリコンの熱処理方法
US20240010502A1 (en) * 2020-11-27 2024-01-11 Tokuyama Corporation Polycrystal silicon rod, polycrystal silicon rod production method, and polycrystal silicon thermal processing method

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3332447A1 (de) * 1983-09-08 1985-03-21 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur befreiung von siliciumbruchstuecken von verunreinigungen
US5108512A (en) 1991-09-16 1992-04-28 Hemlock Semiconductor Corporation Cleaning of CVD reactor used in the production of polycrystalline silicon by impacting with carbon dioxide pellets
JP3318340B2 (ja) 1992-03-19 2002-08-26 日立電子エンジニアリング株式会社 スクラバ
DE19913886A1 (de) 1999-03-26 2000-09-28 Siemens Ag Anlage zur Fertigung von Halbleiterprodukten
DE10359587A1 (de) 2003-12-18 2005-07-14 Wacker-Chemie Gmbh Staub- und porenfreies hochreines Polysiliciumgranulat
DE102006035081A1 (de) 2006-07-28 2008-01-31 Wacker Chemie Ag Verfahren und Vorrichtung zur Herstellung von klassiertem polykristallinen Siliciumbruch in hoher Reinheit
DE102008040231A1 (de) 2008-07-07 2008-12-18 Wacker Chemie Ag Polykristalliner Siliciumbruch hoher Reinheit und Reinigungsverfahren zu seiner Herstellung
CN101624724B (zh) 2008-08-22 2012-07-25 江西赛维Ldk光伏硅科技有限公司 多根多晶硅棒的取棒方法及其取棒装置和取棒装置组合件
JP5751748B2 (ja) 2009-09-16 2015-07-22 信越化学工業株式会社 多結晶シリコン塊群および多結晶シリコン塊群の製造方法
CN102002846B (zh) * 2010-09-10 2012-04-18 东莞市中港净化用品科技有限公司 一种无尘布的制作方法
DE102010040836A1 (de) * 2010-09-15 2012-03-15 Wacker Chemie Ag Verfahren zur Herstellung von Silicium-Dünnstäben
CN201906534U (zh) * 2010-11-16 2011-07-27 扬州晶新微电子有限公司 用于化学气相淀积工艺的真空除尘系统
US20130000672A1 (en) * 2011-06-29 2013-01-03 Memc Electronic Materials, Spa Cleaning tool for polysilicon reactor
JP2013018675A (ja) * 2011-07-11 2013-01-31 Shin-Etsu Chemical Co Ltd 多結晶シリコン製造装置
JP5507505B2 (ja) * 2011-08-01 2014-05-28 信越化学工業株式会社 多結晶シリコンの製造方法
DE102012218748B4 (de) 2012-10-15 2014-02-13 Wacker Chemie Ag Trocknen von Polysilicium

Also Published As

Publication number Publication date
EP2984034B1 (de) 2017-02-15
JP2016521239A (ja) 2016-07-21
WO2014166718A1 (de) 2014-10-16
MY171977A (en) 2019-11-09
US20160045940A1 (en) 2016-02-18
TW201439370A (zh) 2014-10-16
EP2984034A1 (de) 2016-02-17
DE102013206436A1 (de) 2014-10-16
TWI526571B (zh) 2016-03-21
JP6105152B2 (ja) 2017-03-29
KR20150138330A (ko) 2015-12-09
CN105121342A (zh) 2015-12-02
US9962745B2 (en) 2018-05-08

Similar Documents

Publication Publication Date Title
SG11201610304SA (en) Design of susceptor in chemical vapor deposition reactor
EP3122918A4 (en) Precursor and process design for photo-assisted metal atomic layer deposition (ald) and chemical vapor deposition (cvd)
SG10201906117XA (en) Chamber cleaning and semiconductor etching gases
EP3345210A4 (en) CHEMICAL STEAM SEPARATION SYSTEM WITH MULTIPLE CHAMBERS
SA515361283B1 (ar) تنظيف أماكن إنتاج الترسيب الكيميائي للبخار
GB201307709D0 (en) Corrosion and erosion-reistant mixed oxide coatings for the protection of chemical and plasma process chamber components
SG10201606973YA (en) Plasma-enhanced atomic layer deposition system with rotary reactor tube
EP2761054A4 (en) SILICONE OXIDE COATING BY A CHEMICAL STEAM DEPOSITION UNDER NORMAL PRESSURE
SG10201913021PA (en) Chemical vapor deposition process to build 3d foam-like structures
EP3348667A4 (en) Chemical vapor deposition feedstock comprising organic ruthenium compound and chemical vapor deposition method using said chemical vapor deposition feedstock
GB201413865D0 (en) Fluid fuel pipe connector
EP3312137A4 (en) DEPOSITION OF GRAPHENE LAYERS BY PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION
EP2989229A4 (en) Methods for the photo-initiated chemical vapor deposition (picvd) of coatings and coatings produced by these methods
HK1225341B (zh) 為了清潔的目的對飛機的飲用水系統的管道進行處理的方法
GB2539016B (en) Manufacture of graphene by plasma-enhanced CVD
GB201800342D0 (en) Pipes for chemical processing
EP2661516A4 (en) CHUCK FOR CHEMICAL VAPOR DEPOSITION SYSTEMS AND RELATED METHODS
SG11201400877XA (en) Reactor and method for production of silicon by chemical vapor deposition
SG10201506020UA (en) Chemical vapor deposition system, arrangement of chemical vapor deposition systems, and chemical vapor deposition method
GB2541613A (en) Chemical vapor deposition-modified polycrystalline diamond
GB2535582B (en) Compact radial exterior exhaust assisted decomposition reactor pipe
EP3123479A4 (en) Low temperature chemical processing of graphite-clad nuclear fuels
SG11201708235WA (en) Self-centering wafer carrier system for chemical vapor deposition
SG10201506694QA (en) Chemical vapor deposition process and coated article
SG10202011722SA (en) Continuous chemical vapor deposition (cvd) multi-zone process kit