SG11201400877XA - Reactor and method for production of silicon by chemical vapor deposition - Google Patents
Reactor and method for production of silicon by chemical vapor depositionInfo
- Publication number
- SG11201400877XA SG11201400877XA SG11201400877XA SG11201400877XA SG11201400877XA SG 11201400877X A SG11201400877X A SG 11201400877XA SG 11201400877X A SG11201400877X A SG 11201400877XA SG 11201400877X A SG11201400877X A SG 11201400877XA SG 11201400877X A SG11201400877X A SG 11201400877XA
- Authority
- SG
- Singapore
- Prior art keywords
- reactor
- silicon
- production
- vapor deposition
- chemical vapor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20111304A NO334776B1 (en) | 2011-09-26 | 2011-09-26 | Reactor and process for producing silicon by chemical vapor deposition |
| PCT/NO2012/050184 WO2013048258A1 (en) | 2011-09-26 | 2012-09-25 | Reactor and method for production of silicon by chemical vapor deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201400877XA true SG11201400877XA (en) | 2014-06-27 |
Family
ID=47996054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201400877XA SG11201400877XA (en) | 2011-09-26 | 2012-09-25 | Reactor and method for production of silicon by chemical vapor deposition |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9793116B2 (en) |
| EP (1) | EP2760791B1 (en) |
| JP (1) | JP6053796B2 (en) |
| KR (1) | KR101999537B1 (en) |
| CN (1) | CN103827030B (en) |
| NO (1) | NO334776B1 (en) |
| SG (1) | SG11201400877XA (en) |
| WO (1) | WO2013048258A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NO343898B1 (en) * | 2016-09-19 | 2019-07-01 | Dynatec Eng As | Method for producing silicon particles for use as anode material in lithium ion rechargeable batteries, use of a rotating reactor for the method and particles produced by the method and a reactor for operating the method |
| CN112158846A (en) * | 2020-08-14 | 2021-01-01 | 安徽德亚电池有限公司 | Foam silicon negative electrode material and preparation method thereof |
| GB202105832D0 (en) | 2021-04-23 | 2021-06-09 | Nacamed As | Silicon particles for hydrogen delivery |
| GB202105833D0 (en) | 2021-04-23 | 2021-06-09 | Nacamed As | Silicon particles for drug delivery |
| GB202214710D0 (en) | 2022-10-06 | 2022-11-23 | Nacamed As | New methods for production of deuterium oxide and deuterium gas |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3865647A (en) | 1970-09-30 | 1975-02-11 | Siemens Ag | Method for precipitation of semiconductor material |
| US3979490A (en) * | 1970-12-09 | 1976-09-07 | Siemens Aktiengesellschaft | Method for the manufacture of tubular bodies of semiconductor material |
| US4343772A (en) | 1980-02-29 | 1982-08-10 | Nasa | Thermal reactor |
| US4818495A (en) * | 1982-11-05 | 1989-04-04 | Union Carbide Corporation | Reactor for fluidized bed silane decomposition |
| US4981102A (en) * | 1984-04-12 | 1991-01-01 | Ethyl Corporation | Chemical vapor deposition reactor and process |
| FR2570838B1 (en) | 1984-09-25 | 1986-11-21 | Labo Electronique Physique | APPARATUS FOR EXAMINING MEDIA BY ULTRASONIC ECHOGRAPHY WITH ANGULAR FOCUSING |
| JPS61236608A (en) | 1985-04-12 | 1986-10-21 | Mitsubishi Chem Ind Ltd | Production of high-purity silicon |
| US4797241A (en) * | 1985-05-20 | 1989-01-10 | Sii Megadiamond | Method for producing multiple polycrystalline bodies |
| CA2016970A1 (en) | 1990-05-16 | 1991-11-16 | Prasad N. Gadgil | Inverted diffusion stagnation point flow reactor for vapor deposition of thin films |
| JPH04299828A (en) | 1991-03-28 | 1992-10-23 | Shin Etsu Handotai Co Ltd | Semiconductor substrate treatment device |
| JP2867306B2 (en) | 1991-11-15 | 1999-03-08 | 三菱マテリアルポリシリコン株式会社 | Method and apparatus for producing semiconductor grade polycrystalline silicon |
| US5260538A (en) * | 1992-04-09 | 1993-11-09 | Ethyl Corporation | Device for the magnetic inductive heating of vessels |
| US5810934A (en) | 1995-06-07 | 1998-09-22 | Advanced Silicon Materials, Inc. | Silicon deposition reactor apparatus |
| US5746834A (en) | 1996-01-04 | 1998-05-05 | Memc Electronics Materials, Inc. | Method and apparatus for purging barrel reactors |
| JP3206540B2 (en) * | 1998-02-26 | 2001-09-10 | 三菱マテリアル株式会社 | Laminated crucible for producing silicon ingot and method for producing the same |
| JP2004018369A (en) | 2002-06-19 | 2004-01-22 | Yutaka Kamaike | Apparatus and method of manufacturing silicon |
| US20040211496A1 (en) * | 2003-04-25 | 2004-10-28 | Crystal Systems, Inc. | Reusable crucible for silicon ingot growth |
| JP5291282B2 (en) | 2003-08-13 | 2013-09-18 | 株式会社トクヤマ | Tubular reaction vessel and method for producing silicon using the reaction vessel |
| GB0327169D0 (en) | 2003-11-21 | 2003-12-24 | Statoil Asa | Method |
| DE102004038717A1 (en) * | 2004-08-10 | 2006-02-23 | Joint Solar Silicon Gmbh & Co. Kg | Production process for reactor for the decomposition of gases |
| US7449065B1 (en) * | 2006-12-02 | 2008-11-11 | Ohio Aerospace Institute | Method for the growth of large low-defect single crystals |
| JP5039076B2 (en) | 2008-03-24 | 2012-10-03 | 株式会社東芝 | Epitaxial wafer manufacturing apparatus and manufacturing method |
| DE102008059408A1 (en) | 2008-11-27 | 2010-06-02 | Schmid Silicon Technology Gmbh | Process and apparatus for the production of ultrapure silicon |
| NO334785B1 (en) | 2009-05-29 | 2014-05-26 | Dynatec Engineering As | Reactor and process for the production of silicon |
| WO2011044451A2 (en) * | 2009-10-09 | 2011-04-14 | Applied Materials, Inc. | Multi-gas centrally cooled showerhead design |
| JP5749730B2 (en) | 2009-11-25 | 2015-07-15 | ダイナテック エンジニアリング エーエス | Reactor and method for the production of silicon |
| NO334080B1 (en) | 2010-02-11 | 2013-12-02 | Dynatec Engineering As | Reactor and process for producing silicon by chemical vapor deposition |
-
2011
- 2011-09-26 NO NO20111304A patent/NO334776B1/en unknown
-
2012
- 2012-09-25 WO PCT/NO2012/050184 patent/WO2013048258A1/en active Application Filing
- 2012-09-25 EP EP12835547.6A patent/EP2760791B1/en active Active
- 2012-09-25 JP JP2014531752A patent/JP6053796B2/en active Active
- 2012-09-25 US US14/346,944 patent/US9793116B2/en active Active
- 2012-09-25 CN CN201280046615.7A patent/CN103827030B/en active Active
- 2012-09-25 SG SG11201400877XA patent/SG11201400877XA/en unknown
- 2012-09-25 KR KR1020147009913A patent/KR101999537B1/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| JP6053796B2 (en) | 2016-12-27 |
| KR101999537B1 (en) | 2019-07-15 |
| KR20140071431A (en) | 2014-06-11 |
| US9793116B2 (en) | 2017-10-17 |
| CN103827030A (en) | 2014-05-28 |
| US20140242783A1 (en) | 2014-08-28 |
| JP2014526434A (en) | 2014-10-06 |
| CN103827030B (en) | 2018-02-23 |
| EP2760791B1 (en) | 2019-05-22 |
| EP2760791A1 (en) | 2014-08-06 |
| NO20111304A1 (en) | 2013-03-27 |
| EP2760791A4 (en) | 2015-07-01 |
| WO2013048258A1 (en) | 2013-04-04 |
| NO334776B1 (en) | 2014-05-26 |
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