JP2004018369A - Apparatus and method of manufacturing silicon - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing apparatus and method in which a product stuck on a structure in a reaction furnace is easily taken out by treating the inside wall or the like of the furnace with a release material prepared by treating high purity silicon carbide powder, high purity silicon nitride powder, high purity silica or the like with a binder, in the apparatus for manufacturing high purity silicon by a vapor phase zinc reducing method. <P>SOLUTION: When high purity silicon is used for the structure in the reaction furnace and high purity silicon stuck on the structure is taken out as it is, the release material is applied on the inside wall of the furnace, so that a quality of the product is improved, the operation is simplified, the production time is shortened and the production cost is reduced . <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for producing high-purity silicon, and more particularly, to the internal structure of a reactor for performing a reduction reaction in a gas phase by using silicon tetrachloride and metal zinc as a raw material by vaporization and the surface inside the furnace. The present invention relates to a method for producing high-purity silicon, which is a raw material for a solar cell that can be easily processed.
[0002]
[Prior art]
Conventional production of high-purity silicon by a vapor phase zinc reduction method is a method in which silicon crystals are directly adhered and grown on the inner wall of a reaction furnace, so that the operation of removing the adhered silicon is not easy.
[0003]
[Problems to be solved by the invention]
An object of the present invention is to provide a high-purity silicon carbide powder, a high-purity nitride, and a high-purity silicon carbide powder in a reactor for producing a high-purity silicon by a vapor phase zinc reduction method. Apparatus that facilitates separation and collection of generated silicon products by treating with silicon powder, high-purity silica powder, etc. and binders, facilitates separation of products after the reaction is completed, simplifies processing work, and improves quality. And a method.
[0004]
[Means for Solving the Problems]
The invention claimed in the present application to solve the above problems is as follows.
(1) High-purity silicon inside that is used as it is as it is as it is as it is as it is deposited and adhered during the reaction, related to the internal structure of the reactor related to the zinc reduction method of silicon tetrachloride using high-purity zinc and high-purity silicon tetrachloride The surface of the furnace other than the structure is treated with high-purity silicon carbide powder, high-purity silicon nitride powder, high-purity silica powder, etc. as a mold release material for silicon with a binder, and then subjected to surface treatment and application, and the precipitation and removal of products High-purity silicon production equipment that improves product silicon quality and productivity by facilitating separation.
(2) A method for producing high-purity silicon, characterized by using the apparatus described in (1) above to facilitate product removal after the reaction and to improve product quality.
[0005]
As the structure for treating the above-described high-purity silicon carbide powder, high-purity silicon nitride powder and high-purity silica powder with a binder, a structure such as a high-purity silicon plate that is a source of deposition and adhesion, including the inner wall of the furnace, may be used. Including supporting structures.
[0006]
BEST MODE FOR CARRYING OUT THE INVENTION
【Example】
When the precipitation reaction is performed without special treatment on the inner wall of the reactor made of transparent quartz, a large amount of dendritic crystals are generated from the inner wall, and it takes a lot of effort to extract it as a product, and at the same time, it needs to be transferred to the reactor. However, by coating the inner wall of the furnace with a mold release material obtained by treating a high-purity silicon powder and a high-purity silica powder with a binder, a plate for deposition generation using high-purity silicon placed outside the furnace inner wall was obtained. The removal work could be performed easily.

Claims (2)

Concerning the internal structure of the reactor involved in the zinc reduction method of silicon tetrachloride using high-purity zinc and high-purity silicon tetrachloride, other than the high-purity silicon internal structure that is deposited and adhered during the reaction and used as it is as a product The surface of the furnace inside is treated with high-purity silicon carbide powder, high-purity silicon nitride powder, high-purity silica powder, etc. as a mold release material for silicon with a binder, and then subjected to surface treatment coating, etc. to facilitate precipitation and separation of products. A high-purity silicon production system that improves product silicon quality and improves productivity. A method for producing high-purity silicon, characterized by using the apparatus according to claim 1 to facilitate removal of a product after the reaction and to improve product quality.