SG10201900450PA - Structure for radio-frequency applications - Google Patents

Structure for radio-frequency applications

Info

Publication number
SG10201900450PA
SG10201900450PA SG10201900450PA SG10201900450PA SG10201900450PA SG 10201900450P A SG10201900450P A SG 10201900450PA SG 10201900450P A SG10201900450P A SG 10201900450PA SG 10201900450P A SG10201900450P A SG 10201900450PA SG 10201900450P A SG10201900450P A SG 10201900450PA
Authority
SG
Singapore
Prior art keywords
radio
frequency applications
depth
support substrate
trapping layer
Prior art date
Application number
SG10201900450PA
Other languages
English (en)
Inventor
Oleg Kononchuk
Den Daele William Van
Eric Desbonnets
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG10201900450PA publication Critical patent/SG10201900450PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/802—Circuitry or processes for operating piezoelectric or electrostrictive devices not otherwise provided for, e.g. drive circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Micromachines (AREA)
  • Transceivers (AREA)
  • Porous Artificial Stone Or Porous Ceramic Products (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG10201900450PA 2014-08-01 2015-07-03 Structure for radio-frequency applications SG10201900450PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1401800A FR3024587B1 (fr) 2014-08-01 2014-08-01 Procede de fabrication d'une structure hautement resistive

Publications (1)

Publication Number Publication Date
SG10201900450PA true SG10201900450PA (en) 2019-02-27

Family

ID=52102706

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201900450PA SG10201900450PA (en) 2014-08-01 2015-07-03 Structure for radio-frequency applications
SG11201700606YA SG11201700606YA (en) 2014-08-01 2015-07-03 Structure for radio-frequency applications

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201700606YA SG11201700606YA (en) 2014-08-01 2015-07-03 Structure for radio-frequency applications

Country Status (8)

Country Link
US (2) USRE49365E1 (fr)
EP (1) EP3175477B1 (fr)
JP (1) JP6643316B2 (fr)
KR (1) KR102403499B1 (fr)
CN (1) CN106575637B (fr)
FR (1) FR3024587B1 (fr)
SG (2) SG10201900450PA (fr)
WO (1) WO2016016532A1 (fr)

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* Cited by examiner, † Cited by third party
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CN107275197A (zh) * 2016-04-08 2017-10-20 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
EP4009361A1 (fr) * 2016-12-05 2022-06-08 GlobalWafers Co., Ltd. Structure de silicium sur isolant à haute résistivité
FR3062238A1 (fr) * 2017-01-26 2018-07-27 Soitec Support pour une structure semi-conductrice
FR3062517B1 (fr) * 2017-02-02 2019-03-15 Soitec Structure pour application radiofrequence
FR3063854B1 (fr) * 2017-03-13 2021-08-27 Commissariat Energie Atomique Resonateur saw a couches d'attenuation d'ondes parasites
US10784348B2 (en) 2017-03-23 2020-09-22 Qualcomm Incorporated Porous semiconductor handle substrate
US10134837B1 (en) 2017-06-30 2018-11-20 Qualcomm Incorporated Porous silicon post processing
US10224396B1 (en) 2017-11-20 2019-03-05 Globalfoundries Inc. Deep trench isolation structures
WO2019111893A1 (fr) * 2017-12-06 2019-06-13 株式会社村田製作所 Dispositif à ondes acoustiques
FR3079661A1 (fr) * 2018-03-29 2019-10-04 Soitec Procede de fabrication d'un substrat pour filtre radiofrequence
FR3079662B1 (fr) * 2018-03-30 2020-02-28 Soitec Substrat pour applications radiofrequences et procede de fabrication associe
WO2020008116A1 (fr) * 2018-07-05 2020-01-09 Soitec Substrat pour un dispositif integre radioafrequence et son procede de fabrication
US10658474B2 (en) * 2018-08-14 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming thin semiconductor-on-insulator (SOI) substrates
DE102018131946A1 (de) 2018-12-12 2020-06-18 RF360 Europe GmbH Dünnfilm-SAW-Vorrichtung
FR3098342B1 (fr) 2019-07-02 2021-06-04 Soitec Silicon On Insulator structure semi-conductrice comprenant une couche poreuse enterrée, pour applications RF
US11355340B2 (en) * 2019-07-19 2022-06-07 Iqe Plc Semiconductor material having tunable permittivity and tunable thermal conductivity
WO2021053401A2 (fr) * 2019-09-18 2021-03-25 Frec'n'sys Structure de transducteur pour dispositif à ondes acoustiques
FR3105574B1 (fr) * 2019-12-19 2023-01-13 Commissariat Energie Atomique Empilement multicouches de type semi-conducteur-sur-isolant, procédé d’élaboration associé, et module radiofréquence le comprenant
US11469137B2 (en) * 2019-12-17 2022-10-11 Commissariat A L'energie Atomique Et Aux Energies Alternatives Manufacturing process of an RF-SOI trapping layer substrate resulting from a crystalline transformation of a buried layer
CN113629182A (zh) * 2020-05-08 2021-11-09 济南晶正电子科技有限公司 一种tc-saw复合衬底及其制备方法
US20220140812A1 (en) * 2020-10-30 2022-05-05 RF360 Europe GmbH Multi mirror stack
GB2625281A (en) * 2022-12-12 2024-06-19 Iqe Plc Systems and methods for porous wall coatings

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JP2994837B2 (ja) 1992-01-31 1999-12-27 キヤノン株式会社 半導体基板の平坦化方法、半導体基板の作製方法、及び半導体基板
US6255731B1 (en) * 1997-07-30 2001-07-03 Canon Kabushiki Kaisha SOI bonding structure
JP4623451B2 (ja) 1997-07-30 2011-02-02 忠弘 大見 半導体基板及びその作製方法
EP0969522A1 (fr) * 1998-07-03 2000-01-05 Interuniversitair Microelektronica Centrum Vzw Dispositif optoélectronique à couche mince et son procédé de fabrication
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JP2004014841A (ja) * 2002-06-07 2004-01-15 Fujitsu Ltd 半導体装置及びその製造方法
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US20040152276A1 (en) 2003-01-14 2004-08-05 Naoki Nishimura Device, and substrate on which circuit and antenna are formed
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Also Published As

Publication number Publication date
EP3175477A1 (fr) 2017-06-07
WO2016016532A1 (fr) 2016-02-04
JP2017532758A (ja) 2017-11-02
JP6643316B2 (ja) 2020-02-12
KR20170038819A (ko) 2017-04-07
FR3024587B1 (fr) 2018-01-26
FR3024587A1 (fr) 2016-02-05
US20170221839A1 (en) 2017-08-03
US10347597B2 (en) 2019-07-09
USRE49365E1 (en) 2023-01-10
CN106575637B (zh) 2019-11-19
SG11201700606YA (en) 2017-02-27
EP3175477B1 (fr) 2021-02-24
CN106575637A (zh) 2017-04-19
KR102403499B1 (ko) 2022-05-31

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