SG10201806706VA - Electrostatic chuck and method of making same - Google Patents
Electrostatic chuck and method of making sameInfo
- Publication number
- SG10201806706VA SG10201806706VA SG10201806706VA SG10201806706VA SG10201806706VA SG 10201806706V A SG10201806706V A SG 10201806706VA SG 10201806706V A SG10201806706V A SG 10201806706VA SG 10201806706V A SG10201806706V A SG 10201806706VA SG 10201806706V A SG10201806706V A SG 10201806706VA
- Authority
- SG
- Singapore
- Prior art keywords
- electrostatic chuck
- electrode
- dielectric layer
- disposed over
- making same
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000010410 layer Substances 0.000 abstract 8
- 239000000919 ceramic Substances 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76832—Multiple layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201461937135P | 2014-02-07 | 2014-02-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201806706VA true SG10201806706VA (en) | 2018-09-27 |
Family
ID=52544589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201806706VA SG10201806706VA (en) | 2014-02-07 | 2015-02-06 | Electrostatic chuck and method of making same |
Country Status (8)
Country | Link |
---|---|
US (1) | US10497598B2 (ja) |
EP (1) | EP3103136B1 (ja) |
JP (1) | JP6527524B2 (ja) |
KR (1) | KR102369706B1 (ja) |
CN (1) | CN107078086B (ja) |
SG (1) | SG10201806706VA (ja) |
TW (1) | TWI663681B (ja) |
WO (1) | WO2015120265A1 (ja) |
Families Citing this family (37)
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US10236202B2 (en) * | 2013-11-11 | 2019-03-19 | Diablo Capital, Inc. | System and method for adhering a semiconductive wafer to a mobile electrostatic carrier through a vacuum |
CN107078086B (zh) | 2014-02-07 | 2021-01-26 | 恩特格里斯公司 | 静电夹具以及制造其之方法 |
US20160379806A1 (en) * | 2015-06-25 | 2016-12-29 | Lam Research Corporation | Use of plasma-resistant atomic layer deposition coatings to extend the lifetime of polymer components in etch chambers |
US20170211185A1 (en) * | 2016-01-22 | 2017-07-27 | Applied Materials, Inc. | Ceramic showerhead with embedded conductive layers |
US11326253B2 (en) | 2016-04-27 | 2022-05-10 | Applied Materials, Inc. | Atomic layer deposition of protective coatings for semiconductor process chamber components |
US9850573B1 (en) | 2016-06-23 | 2017-12-26 | Applied Materials, Inc. | Non-line of sight deposition of erbium based plasma resistant ceramic coating |
US20180016678A1 (en) | 2016-07-15 | 2018-01-18 | Applied Materials, Inc. | Multi-layer coating with diffusion barrier layer and erosion resistant layer |
US10186400B2 (en) | 2017-01-20 | 2019-01-22 | Applied Materials, Inc. | Multi-layer plasma resistant coating by atomic layer deposition |
US20180213608A1 (en) * | 2017-01-20 | 2018-07-26 | Applied Materials, Inc. | Electrostatic chuck with radio frequency isolated heaters |
SG11201906817TA (en) | 2017-01-27 | 2019-08-27 | Ultratech Inc | Chuck systems and methods having enhanced electrical isolation for substrate-biased ald |
US10975469B2 (en) | 2017-03-17 | 2021-04-13 | Applied Materials, Inc. | Plasma resistant coating of porous body by atomic layer deposition |
US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
US11279656B2 (en) | 2017-10-27 | 2022-03-22 | Applied Materials, Inc. | Nanopowders, nanoceramic materials and methods of making and use thereof |
WO2019126155A1 (en) * | 2017-12-18 | 2019-06-27 | Entegris, Inc. | Chemical resistant multi-layer coatings applied by atomic layer deposition |
KR102655866B1 (ko) | 2018-01-31 | 2024-04-05 | 램 리써치 코포레이션 | 정전 척 (electrostatic chuck, ESC) 페데스탈 전압 분리 |
US11086233B2 (en) * | 2018-03-20 | 2021-08-10 | Lam Research Corporation | Protective coating for electrostatic chucks |
US10443126B1 (en) | 2018-04-06 | 2019-10-15 | Applied Materials, Inc. | Zone-controlled rare-earth oxide ALD and CVD coatings |
US11667575B2 (en) | 2018-07-18 | 2023-06-06 | Applied Materials, Inc. | Erosion resistant metal oxide coatings |
US11031272B2 (en) * | 2018-11-06 | 2021-06-08 | Mikro Mesa Technology Co., Ltd. | Micro device electrostatic chuck with diffusion blocking layer |
US11742781B2 (en) * | 2018-11-19 | 2023-08-29 | Entegris, Inc. | Electrostatic chuck with charge dissipation coating |
US11180847B2 (en) | 2018-12-06 | 2021-11-23 | Applied Materials, Inc. | Atomic layer deposition coatings for high temperature ceramic components |
US11673161B2 (en) * | 2019-03-11 | 2023-06-13 | Technetics Group Llc | Methods of manufacturing electrostatic chucks |
US10858741B2 (en) | 2019-03-11 | 2020-12-08 | Applied Materials, Inc. | Plasma resistant multi-layer architecture for high aspect ratio parts |
US11335581B2 (en) * | 2019-07-31 | 2022-05-17 | Eryn Smith | System and method for adhering a semiconductive wafer to an electrostatic carrier by adjusting relative permittivity |
KR20210032606A (ko) * | 2019-09-16 | 2021-03-25 | 삼성디스플레이 주식회사 | 금속 마스크, 이의 제조 방법, 및 표시 패널 제조 방법 |
CN112553592B (zh) * | 2019-09-25 | 2023-03-31 | 中微半导体设备(上海)股份有限公司 | 一种利用ald工艺对静电吸盘进行处理的方法 |
CN113053774A (zh) * | 2019-12-27 | 2021-06-29 | 迪科特测试科技(苏州)有限公司 | 探测装置 |
KR20210113497A (ko) * | 2020-03-06 | 2021-09-16 | 세메스 주식회사 | 지지 유닛 및 그를 포함하는 기판 처리 장치 |
EP4256100A1 (en) | 2020-12-02 | 2023-10-11 | Oerlikon Surface Solutions AG, Pfäffikon | Improved plasma resistant coatings for electrostatic chucks |
CN112652677B (zh) * | 2020-12-09 | 2023-10-27 | 晋能光伏技术有限责任公司 | 一种perc电池背面钝化工艺 |
US11417557B2 (en) * | 2020-12-15 | 2022-08-16 | Entegris, Inc. | Spiraling polyphase electrodes for electrostatic chuck |
US11955361B2 (en) * | 2021-04-15 | 2024-04-09 | Applied Materials, Inc. | Electrostatic chuck with mesas |
KR102520805B1 (ko) * | 2021-05-10 | 2023-04-13 | 주식회사 템네스트 | 이종 복합재료로 이루어진 전극층을 포함하는 정전척의 제조방법 및 이에 의해 제조된 정전척 |
KR102548445B1 (ko) * | 2021-05-10 | 2023-06-28 | 부경대학교 산학협력단 | 클래드재 전극층을 포함하는 정전척의 제조방법 및 이에 의해 제조된 정전척 |
KR20230119748A (ko) * | 2022-02-08 | 2023-08-16 | (주)아이씨디 | 정전 장치 및 그 동작 방법 |
US20230294208A1 (en) * | 2022-03-21 | 2023-09-21 | Applied Materials, Inc. | Electrostatic chuck with laser-machined mesas |
US20230312422A1 (en) * | 2022-04-01 | 2023-10-05 | Applied Materials, Inc. | Ceramic engineering by grading materials |
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JP4004086B2 (ja) * | 1996-07-22 | 2007-11-07 | 日本発条株式会社 | 静電チャック装置 |
JP3949763B2 (ja) | 1996-11-21 | 2007-07-25 | トーカロ株式会社 | 静電チャック部材 |
US5909355A (en) | 1997-12-02 | 1999-06-01 | Applied Materials, Inc. | Ceramic electrostatic chuck and method of fabricating same |
JPH11168134A (ja) * | 1997-12-03 | 1999-06-22 | Shin Etsu Chem Co Ltd | 静電吸着装置およびその製造方法 |
JPH11260534A (ja) * | 1998-01-09 | 1999-09-24 | Ngk Insulators Ltd | 加熱装置およびその製造方法 |
JP4082924B2 (ja) | 2002-04-16 | 2008-04-30 | キヤノンアネルバ株式会社 | 静電吸着ホルダー及び基板処理装置 |
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JP4307195B2 (ja) | 2003-09-17 | 2009-08-05 | 京セラ株式会社 | 静電チャック |
KR100666039B1 (ko) * | 2003-12-05 | 2007-01-10 | 동경 엘렉트론 주식회사 | 정전척 |
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WO2008082978A2 (en) * | 2006-12-26 | 2008-07-10 | Saint-Gobain Ceramics & Plastics, Inc. | Electrostatic chuck and method of forming |
TWI475594B (zh) | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
JP4712836B2 (ja) * | 2008-07-07 | 2011-06-29 | 信越化学工業株式会社 | 耐腐食性積層セラミックス部材 |
JP5453902B2 (ja) | 2009-04-27 | 2014-03-26 | Toto株式会社 | 静電チャックおよび静電チャックの製造方法 |
SG176059A1 (en) | 2009-05-15 | 2011-12-29 | Entegris Inc | Electrostatic chuck with polymer protrusions |
KR100997374B1 (ko) | 2009-08-21 | 2010-11-30 | 주식회사 코미코 | 정전척 및 이의 제조 방법 |
US8637794B2 (en) * | 2009-10-21 | 2014-01-28 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
WO2011149918A2 (en) | 2010-05-28 | 2011-12-01 | Entegris, Inc. | High surface resistivity electrostatic chuck |
US8619406B2 (en) | 2010-05-28 | 2013-12-31 | Fm Industries, Inc. | Substrate supports for semiconductor applications |
US9728429B2 (en) * | 2010-07-27 | 2017-08-08 | Lam Research Corporation | Parasitic plasma prevention in plasma processing chambers |
WO2012033922A2 (en) | 2010-09-08 | 2012-03-15 | Entegris, Inc. | High conductivity electrostatic chuck |
KR101974386B1 (ko) * | 2012-03-21 | 2019-05-03 | 주식회사 미코 | 정전척 |
CN107078086B (zh) | 2014-02-07 | 2021-01-26 | 恩特格里斯公司 | 静电夹具以及制造其之方法 |
-
2015
- 2015-02-06 CN CN201580007196.XA patent/CN107078086B/zh active Active
- 2015-02-06 WO PCT/US2015/014810 patent/WO2015120265A1/en active Application Filing
- 2015-02-06 SG SG10201806706VA patent/SG10201806706VA/en unknown
- 2015-02-06 US US15/111,591 patent/US10497598B2/en active Active
- 2015-02-06 JP JP2016548231A patent/JP6527524B2/ja active Active
- 2015-02-06 TW TW104104028A patent/TWI663681B/zh active
- 2015-02-06 KR KR1020167021232A patent/KR102369706B1/ko active IP Right Grant
- 2015-02-06 EP EP15705762.1A patent/EP3103136B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP3103136A1 (en) | 2016-12-14 |
JP6527524B2 (ja) | 2019-06-05 |
TWI663681B (zh) | 2019-06-21 |
KR20160118259A (ko) | 2016-10-11 |
JP2017507484A (ja) | 2017-03-16 |
TW201545268A (zh) | 2015-12-01 |
EP3103136B1 (en) | 2021-06-23 |
KR102369706B1 (ko) | 2022-03-04 |
CN107078086A (zh) | 2017-08-18 |
US10497598B2 (en) | 2019-12-03 |
US20160336210A1 (en) | 2016-11-17 |
CN107078086B (zh) | 2021-01-26 |
WO2015120265A1 (en) | 2015-08-13 |
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