SG10201804649VA - Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction program - Google Patents

Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction program

Info

Publication number
SG10201804649VA
SG10201804649VA SG10201804649VA SG10201804649VA SG10201804649VA SG 10201804649V A SG10201804649V A SG 10201804649VA SG 10201804649V A SG10201804649V A SG 10201804649VA SG 10201804649V A SG10201804649V A SG 10201804649VA SG 10201804649V A SG10201804649V A SG 10201804649VA
Authority
SG
Singapore
Prior art keywords
electrostatic attraction
plasma processing
processing apparatus
program
focus ring
Prior art date
Application number
SG10201804649VA
Other languages
English (en)
Inventor
Shoichiro Matsuyama
Naoki Tamaru
Yasuharu Sasaki
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG10201804649VA publication Critical patent/SG10201804649VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32201—Generating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Stored Programmes (AREA)
SG10201804649VA 2017-06-02 2018-06-01 Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction program SG10201804649VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017110452A JP6861579B2 (ja) 2017-06-02 2017-06-02 プラズマ処理装置、静電吸着方法および静電吸着プログラム

Publications (1)

Publication Number Publication Date
SG10201804649VA true SG10201804649VA (en) 2019-01-30

Family

ID=64458796

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201804649VA SG10201804649VA (en) 2017-06-02 2018-06-01 Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction program

Country Status (6)

Country Link
US (2) US10879050B2 (zh)
JP (1) JP6861579B2 (zh)
KR (2) KR102575644B1 (zh)
CN (2) CN108987233B (zh)
SG (1) SG10201804649VA (zh)
TW (2) TWI781175B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111446144B (zh) * 2019-01-17 2024-04-19 东京毅力科创株式会社 静电吸附部的控制方法和等离子体处理装置
JP7346269B2 (ja) * 2019-01-17 2023-09-19 東京エレクトロン株式会社 静電吸着部の制御方法、及びプラズマ処理装置
JP7333712B2 (ja) 2019-06-05 2023-08-25 東京エレクトロン株式会社 静電チャック、支持台及びプラズマ処理装置
JP7398909B2 (ja) 2019-09-12 2023-12-15 東京エレクトロン株式会社 静電吸着方法及びプラズマ処理装置
JP7325294B2 (ja) * 2019-10-17 2023-08-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7365912B2 (ja) * 2020-01-10 2023-10-20 東京エレクトロン株式会社 エッジリング及び基板処理装置
JP7390219B2 (ja) 2020-03-11 2023-12-01 東京エレクトロン株式会社 エッジリングの保持方法、プラズマ処理装置、及び基板処理システム
JP2022042379A (ja) * 2020-09-02 2022-03-14 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP2022111771A (ja) * 2021-01-20 2022-08-01 東京エレクトロン株式会社 プラズマ処理システム及びプラズマ処理方法
JP2023039828A (ja) 2021-09-09 2023-03-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114437A (ja) * 1981-12-26 1983-07-07 Fujitsu Ltd 静電吸着方法
JPH0513555A (ja) * 1991-07-01 1993-01-22 Toto Ltd 静電チヤツク及び静電チヤツクに対する電圧印加方法
JPH06244271A (ja) * 1993-02-19 1994-09-02 Ulvac Japan Ltd 静電吸着装置
JP4330737B2 (ja) * 1999-11-24 2009-09-16 株式会社アルバック 真空処理方法
JP4559595B2 (ja) * 2000-07-17 2010-10-06 東京エレクトロン株式会社 被処理体の載置装置及びプラズマ処理装置
US6760213B2 (en) * 2002-03-04 2004-07-06 Hitachi High-Technologies Corporation Electrostatic chuck and method of treating substrate using electrostatic chuck
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
JP4504061B2 (ja) * 2004-03-29 2010-07-14 東京エレクトロン株式会社 プラズマ処理方法
JP4847909B2 (ja) * 2007-03-29 2011-12-28 東京エレクトロン株式会社 プラズマ処理方法及び装置
US20090109595A1 (en) * 2007-10-31 2009-04-30 Sokudo Co., Ltd. Method and system for performing electrostatic chuck clamping in track lithography tools
JP5657262B2 (ja) 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP2010232476A (ja) * 2009-03-27 2010-10-14 Tokyo Electron Ltd プラズマ処理装置
JP5496568B2 (ja) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2011040658A (ja) * 2009-08-17 2011-02-24 Fujitsu Semiconductor Ltd 処理物保持装置、静電チャックの制御方法及び半導体装置の製造方法
JPWO2013027584A1 (ja) * 2011-08-19 2015-03-19 株式会社アルバック 真空処理装置及び真空処理方法
JP5976377B2 (ja) * 2012-04-25 2016-08-23 東京エレクトロン株式会社 被処理基体に対する微粒子付着の制御方法、及び、処理装置
JP2015072825A (ja) * 2013-10-03 2015-04-16 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
GB201321463D0 (en) * 2013-12-05 2014-01-22 Oxford Instr Nanotechnology Tools Ltd Electrostatic clamping method and apparatus
JP6346855B2 (ja) * 2014-12-25 2018-06-20 東京エレクトロン株式会社 静電吸着方法及び基板処理装置
JP6552346B2 (ja) * 2015-09-04 2019-07-31 東京エレクトロン株式会社 基板処理装置
US9922857B1 (en) * 2016-11-03 2018-03-20 Lam Research Corporation Electrostatically clamped edge ring

Also Published As

Publication number Publication date
US20180350565A1 (en) 2018-12-06
KR20180132534A (ko) 2018-12-12
KR20230129362A (ko) 2023-09-08
CN111668085B (zh) 2023-06-27
CN108987233B (zh) 2020-07-03
US11764038B2 (en) 2023-09-19
TW201908523A (zh) 2019-03-01
US10879050B2 (en) 2020-12-29
US20210074522A1 (en) 2021-03-11
JP6861579B2 (ja) 2021-04-21
KR102575644B1 (ko) 2023-09-05
TWI781175B (zh) 2022-10-21
CN111668085A (zh) 2020-09-15
TW202300698A (zh) 2023-01-01
CN108987233A (zh) 2018-12-11
JP2018206935A (ja) 2018-12-27

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