JP2018206935A - プラズマ処理装置、静電吸着方法および静電吸着プログラム - Google Patents
プラズマ処理装置、静電吸着方法および静電吸着プログラム Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 15
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- 238000009832 plasma treatment Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 abstract description 59
- 230000007423 decrease Effects 0.000 abstract description 10
- 210000002381 plasma Anatomy 0.000 description 88
- 238000010586 diagram Methods 0.000 description 24
- 238000012546 transfer Methods 0.000 description 23
- 238000013508 migration Methods 0.000 description 8
- 230000005012 migration Effects 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 7
- 238000009434 installation Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000002826 coolant Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
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- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32201—Generating means
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
Description
10 処理容器
11 サセプタ
21a 第1の高周波電源
21b 第2の高周波電源
25 静電チャック
25a 中心部
25b 外周部
26 電極板
27 直流電源
28 直流電源
29 電極板
30 フォーカスリング
43 制御部
W ウエハ
Claims (6)
- フォーカスリングが載置され、内部に前記フォーカスリングと対向するように電極が設けられた載置台と、
プラズマ処理の期間中に、前記電極に対して周期的に異なる極性の電圧を印加、または、段階的に絶対値の大きい電圧を印加する電圧印加部と、
を有することを特徴とするプラズマ処理装置。 - 前記載置台は、前記フォーカスリングの径方向に対して複数の電極が設けられている
ことを特徴とする請求項1に記載のプラズマ処理装置。 - 前記電圧印加部は、前記複数の電極に印加される電圧の極性を全て、または、1つずつ順に切り替える
ことを特徴とする請求項2に記載のプラズマ処理装置。 - 前記電圧印加部は、各周期において、前記複数の電極に異なる極性の電圧が印加されるように電圧を印加する
ことを特徴とする請求項2または3に記載のプラズマ処理装置。 - フォーカスリングが載置され、内部に前記フォーカスリングと対向するように電極が設けられた載置台の前記電極に対して、プラズマ処理の期間中に、周期的に異なる極性の電圧を印加する、または、段階的に絶対値の大きい電圧を印加する
ことを特徴とする静電吸着方法。 - コンピュータが、
フォーカスリングが載置され、内部に前記フォーカスリングと対向するように電極が設けられた載置台の前記電極に対して、プラズマ処理の期間中に、周期的に異なる極性の電圧を印加、または、段階的に絶対値の大きい電圧を印加するように制御する
処理を実行することを特徴とする静電吸着プログラム。
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017110452A JP6861579B2 (ja) | 2017-06-02 | 2017-06-02 | プラズマ処理装置、静電吸着方法および静電吸着プログラム |
TW111134702A TW202300698A (zh) | 2017-06-02 | 2018-05-28 | 電漿處理裝置 |
TW107118070A TWI781175B (zh) | 2017-06-02 | 2018-05-28 | 電漿處理裝置、靜電吸附方法及靜電吸附程式 |
KR1020180061733A KR102575644B1 (ko) | 2017-06-02 | 2018-05-30 | 플라즈마 처리 장치, 정전 흡착 방법 및 정전 흡착 프로그램 |
SG10201804649VA SG10201804649VA (en) | 2017-06-02 | 2018-06-01 | Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction program |
CN201810558220.4A CN108987233B (zh) | 2017-06-02 | 2018-06-01 | 等离子体处理装置和静电吸附方法 |
US15/995,373 US10879050B2 (en) | 2017-06-02 | 2018-06-01 | Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction program |
CN202010502543.9A CN111668085B (zh) | 2017-06-02 | 2018-06-01 | 等离子体处理装置 |
US16/952,875 US11764038B2 (en) | 2017-06-02 | 2020-11-19 | Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction program |
KR1020230116328A KR20230129362A (ko) | 2017-06-02 | 2023-09-01 | 플라즈마 처리 장치, 정전 흡착 방법 및 정전 흡착 프로그램 |
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JP2017110452A JP6861579B2 (ja) | 2017-06-02 | 2017-06-02 | プラズマ処理装置、静電吸着方法および静電吸着プログラム |
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JP2018206935A true JP2018206935A (ja) | 2018-12-27 |
JP6861579B2 JP6861579B2 (ja) | 2021-04-21 |
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JP2017110452A Active JP6861579B2 (ja) | 2017-06-02 | 2017-06-02 | プラズマ処理装置、静電吸着方法および静電吸着プログラム |
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Country | Link |
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US (2) | US10879050B2 (ja) |
JP (1) | JP6861579B2 (ja) |
KR (2) | KR102575644B1 (ja) |
CN (2) | CN108987233B (ja) |
SG (1) | SG10201804649VA (ja) |
TW (2) | TW202300698A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200140198A (ko) | 2019-06-05 | 2020-12-15 | 도쿄엘렉트론가부시키가이샤 | 정전 척, 지지대 및 플라즈마 처리 장치 |
JP2021044413A (ja) * | 2019-09-12 | 2021-03-18 | 東京エレクトロン株式会社 | 静電吸着方法及びプラズマ処理装置 |
JP2021064750A (ja) * | 2019-10-17 | 2021-04-22 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
KR20230037452A (ko) | 2021-09-09 | 2023-03-16 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
JP7390219B2 (ja) | 2020-03-11 | 2023-12-01 | 東京エレクトロン株式会社 | エッジリングの保持方法、プラズマ処理装置、及び基板処理システム |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7105666B2 (ja) * | 2018-09-26 | 2022-07-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CN111446144B (zh) * | 2019-01-17 | 2024-04-19 | 东京毅力科创株式会社 | 静电吸附部的控制方法和等离子体处理装置 |
JP7346269B2 (ja) * | 2019-01-17 | 2023-09-19 | 東京エレクトロン株式会社 | 静電吸着部の制御方法、及びプラズマ処理装置 |
JP7365912B2 (ja) * | 2020-01-10 | 2023-10-20 | 東京エレクトロン株式会社 | エッジリング及び基板処理装置 |
JP7499651B2 (ja) * | 2020-09-02 | 2024-06-14 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
JP2022111771A (ja) * | 2021-01-20 | 2022-08-01 | 東京エレクトロン株式会社 | プラズマ処理システム及びプラズマ処理方法 |
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2017
- 2017-06-02 JP JP2017110452A patent/JP6861579B2/ja active Active
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2018
- 2018-05-28 TW TW111134702A patent/TW202300698A/zh unknown
- 2018-05-28 TW TW107118070A patent/TWI781175B/zh active
- 2018-05-30 KR KR1020180061733A patent/KR102575644B1/ko active IP Right Grant
- 2018-06-01 SG SG10201804649VA patent/SG10201804649VA/en unknown
- 2018-06-01 CN CN201810558220.4A patent/CN108987233B/zh active Active
- 2018-06-01 US US15/995,373 patent/US10879050B2/en active Active
- 2018-06-01 CN CN202010502543.9A patent/CN111668085B/zh active Active
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2020
- 2020-11-19 US US16/952,875 patent/US11764038B2/en active Active
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- 2023-09-01 KR KR1020230116328A patent/KR20230129362A/ko not_active Application Discontinuation
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KR20200140198A (ko) | 2019-06-05 | 2020-12-15 | 도쿄엘렉트론가부시키가이샤 | 정전 척, 지지대 및 플라즈마 처리 장치 |
US11894218B2 (en) | 2019-06-05 | 2024-02-06 | Tokyo Electron Limited | Electrostatic chuck, support platform, and plasma processing apparatus |
JP2021044413A (ja) * | 2019-09-12 | 2021-03-18 | 東京エレクトロン株式会社 | 静電吸着方法及びプラズマ処理装置 |
KR20210031608A (ko) | 2019-09-12 | 2021-03-22 | 도쿄엘렉트론가부시키가이샤 | 정전 흡착 방법 및 플라즈마 처리 장치 |
JP7398909B2 (ja) | 2019-09-12 | 2023-12-15 | 東京エレクトロン株式会社 | 静電吸着方法及びプラズマ処理装置 |
JP2021064750A (ja) * | 2019-10-17 | 2021-04-22 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP7325294B2 (ja) | 2019-10-17 | 2023-08-14 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP7390219B2 (ja) | 2020-03-11 | 2023-12-01 | 東京エレクトロン株式会社 | エッジリングの保持方法、プラズマ処理装置、及び基板処理システム |
US11984303B2 (en) | 2020-03-11 | 2024-05-14 | Tokyo Electron Limited | Holding method of edge ring, plasma processing apparatus, and substrate processing system |
KR20230037452A (ko) | 2021-09-09 | 2023-03-16 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
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JP6861579B2 (ja) | 2021-04-21 |
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CN111668085B (zh) | 2023-06-27 |
KR20180132534A (ko) | 2018-12-12 |
KR20230129362A (ko) | 2023-09-08 |
US20210074522A1 (en) | 2021-03-11 |
TW201908523A (zh) | 2019-03-01 |
CN108987233A (zh) | 2018-12-11 |
SG10201804649VA (en) | 2019-01-30 |
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CN108987233B (zh) | 2020-07-03 |
US10879050B2 (en) | 2020-12-29 |
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