SG10201804075VA - Semiconductor device and method for fabricating the same - Google Patents

Semiconductor device and method for fabricating the same

Info

Publication number
SG10201804075VA
SG10201804075VA SG10201804075VA SG10201804075VA SG10201804075VA SG 10201804075V A SG10201804075V A SG 10201804075VA SG 10201804075V A SG10201804075V A SG 10201804075VA SG 10201804075V A SG10201804075V A SG 10201804075VA SG 10201804075V A SG10201804075V A SG 10201804075VA
Authority
SG
Singapore
Prior art keywords
fin type
pattern
facet
type pattern
semiconductor device
Prior art date
Application number
SG10201804075VA
Other languages
English (en)
Inventor
Seok Hoon Kim
Dong Myoung Kim
Dong Suk Shin
Seung Hun Lee
Cho Eun Lee
Hyun Jung Lee
Sung Uk Jang
Edward Nam Kyu Cho
Min-Hee Choi
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10201804075VA publication Critical patent/SG10201804075VA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6215—Fin field-effect transistors [FinFET] having multiple independently-addressable gate electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0158—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/834—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising FinFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02645—Seed materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10D86/215—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI comprising FinFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
SG10201804075VA 2017-08-30 2018-05-14 Semiconductor device and method for fabricating the same SG10201804075VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170110247A KR102432467B1 (ko) 2017-08-30 2017-08-30 반도체 장치 및 이의 제조 방법

Publications (1)

Publication Number Publication Date
SG10201804075VA true SG10201804075VA (en) 2019-03-28

Family

ID=65434324

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201804075VA SG10201804075VA (en) 2017-08-30 2018-05-14 Semiconductor device and method for fabricating the same

Country Status (4)

Country Link
US (2) US10784379B2 (zh)
KR (1) KR102432467B1 (zh)
CN (1) CN109427778B (zh)
SG (1) SG10201804075VA (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102310076B1 (ko) 2015-04-23 2021-10-08 삼성전자주식회사 비대칭 소스/드레인 포함하는 반도체 소자
US11854904B2 (en) 2020-08-13 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Different source/drain profiles for n-type FinFETs and p-type FinFETs
US11315834B2 (en) * 2020-08-13 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. FinFETs with epitaxy regions having mixed wavy and non-wavy portions
US11515215B2 (en) * 2020-08-13 2022-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Asymmetric epitaxy regions for landing contact plug
US11876135B2 (en) * 2021-01-28 2024-01-16 Taiwan Semiconductor Manufacturing Company, Ltd. Epitaxial source/drain structures for multigate devices and methods of fabricating thereof
KR20230028920A (ko) 2021-08-23 2023-03-03 삼성전자주식회사 반도체 장치

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2037492A1 (en) 2007-09-11 2009-03-18 S.O.I.Tec Silicon Insulator Technologies Multiple gate field effect transistor structure and method for fabricating same
US8440517B2 (en) 2010-10-13 2013-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET and method of fabricating the same
US8362575B2 (en) * 2009-09-29 2013-01-29 Taiwan Semiconductor Manufacturing Company, Ltd. Controlling the shape of source/drain regions in FinFETs
CN103165459B (zh) 2011-12-15 2016-01-06 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管及其制作方法
US9093556B2 (en) 2012-08-21 2015-07-28 Stmicroelectronics, Inc. Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods
US8921191B2 (en) * 2013-02-05 2014-12-30 GlobalFoundries, Inc. Integrated circuits including FINFET devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the same
KR102068980B1 (ko) 2013-08-01 2020-01-22 삼성전자 주식회사 반도체 장치 및 그 제조 방법
US9257537B2 (en) 2013-12-27 2016-02-09 International Business Machines Corporation Finfet including improved epitaxial topology
KR102155181B1 (ko) 2014-01-28 2020-09-11 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102158961B1 (ko) * 2014-05-13 2020-09-24 삼성전자 주식회사 반도체 장치 및 그 제조 방법
US9287357B2 (en) * 2014-06-16 2016-03-15 Samsung Electronics Co., Ltd. Integrated circuits with Si and non-Si nanosheet FET co-integration with low band-to-band tunneling and methods of fabricating the same
US9595524B2 (en) * 2014-07-15 2017-03-14 Globalfoundries Inc. FinFET source-drain merged by silicide-based material
KR102216511B1 (ko) * 2014-07-22 2021-02-18 삼성전자주식회사 반도체 소자
KR102410135B1 (ko) * 2014-09-12 2022-06-17 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9406682B2 (en) * 2014-09-12 2016-08-02 International Business Machines Corporation Method and structure for preventing epi merging in embedded dynamic random access memory
US9362285B2 (en) * 2014-10-02 2016-06-07 International Business Machines Corporation Structure and method to increase contact area in unmerged EPI integration for CMOS FinFETs
US9312274B1 (en) * 2014-10-15 2016-04-12 Globalfoundries Inc. Merged fin structures for finFET devices
US10164108B2 (en) 2014-10-17 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device and method for forming the same
US9287382B1 (en) * 2014-11-06 2016-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for semiconductor device
US9391201B2 (en) 2014-11-25 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain structure and manufacturing the same
CN105826190B (zh) * 2015-01-06 2019-08-27 中芯国际集成电路制造(上海)有限公司 N型鳍式场效应晶体管及其形成方法
KR102330757B1 (ko) * 2015-03-30 2021-11-25 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102379267B1 (ko) * 2015-04-01 2022-03-28 삼성전자주식회사 아이솔레이션 영역 상의 스페이서를 갖는 반도체 소자
KR102251060B1 (ko) * 2015-04-06 2021-05-14 삼성전자주식회사 반도체 장치 및 반도체 장치의 제조 방법
US9773906B2 (en) 2015-04-28 2017-09-26 Samsung Electronics Co., Ltd. Relaxed semiconductor layers with reduced defects and methods of forming the same
KR20160141034A (ko) 2015-05-27 2016-12-08 삼성전자주식회사 반도체 소자 및 반도체 소자의 제조 방법
US9437496B1 (en) * 2015-06-01 2016-09-06 Globalfoundries Inc. Merged source drain epitaxy
KR102291062B1 (ko) * 2015-06-18 2021-08-17 삼성전자주식회사 반도체 장치 및 이의 제조 방법
KR102422430B1 (ko) * 2015-07-16 2022-07-18 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9922978B2 (en) 2015-08-21 2018-03-20 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor structure with recessed source/drain structure and method for forming the same
US9660025B2 (en) * 2015-08-31 2017-05-23 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure
US10103249B2 (en) * 2015-09-10 2018-10-16 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device and method for fabricating the same
US9831116B2 (en) 2015-09-15 2017-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. FETS and methods of forming FETs
WO2017052905A1 (en) 2015-09-22 2017-03-30 Applied Materials, Inc. Apparatus and method for selective deposition
US9922975B2 (en) 2015-10-05 2018-03-20 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit having field-effect trasistors with dielectric fin sidewall structures and manufacturing method thereof
US10026662B2 (en) * 2015-11-06 2018-07-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and fabricating method thereof
KR102480447B1 (ko) * 2015-11-20 2022-12-22 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9397006B1 (en) * 2015-12-04 2016-07-19 International Business Machines Corporation Co-integration of different fin pitches for logic and analog devices
US9595518B1 (en) * 2015-12-15 2017-03-14 Globalfoundries Inc. Fin-type metal-semiconductor resistors and fabrication methods thereof
CN106920776B (zh) * 2015-12-25 2019-12-03 中芯国际集成电路制造(上海)有限公司 鳍式晶体管的形成方法
KR102526580B1 (ko) 2016-01-11 2023-04-27 삼성전자주식회사 반도체 장치 및 그 제조 방법
US10038095B2 (en) * 2016-01-28 2018-07-31 Taiwan Semiconductor Manufacturing Co., Ltd. V-shape recess profile for embedded source/drain epitaxy
US9947756B2 (en) * 2016-02-18 2018-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US9755019B1 (en) * 2016-03-03 2017-09-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10002923B2 (en) * 2016-06-06 2018-06-19 International Business Machines Corporation Techniques for forming finFET transistors with same fin pitch and different source/drain epitaxy configurations
US9805989B1 (en) * 2016-09-22 2017-10-31 International Business Machines Corporation Sacrificial cap for forming semiconductor contact
US9953875B1 (en) * 2016-11-30 2018-04-24 Taiwan Semiconductor Manufacturing Company Contact resistance control in epitaxial structures of finFET
US10020307B1 (en) * 2017-02-10 2018-07-10 Globalfoundries Inc. Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same
KR102276650B1 (ko) * 2017-04-03 2021-07-15 삼성전자주식회사 반도체 소자의 제조 방법
KR102373630B1 (ko) * 2017-05-26 2022-03-11 삼성전자주식회사 반도체 장치
KR102414182B1 (ko) * 2017-06-29 2022-06-28 삼성전자주식회사 반도체 소자
US10141231B1 (en) * 2017-08-28 2018-11-27 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device with wrapped-around epitaxial structure and manufacturing method thereof
US10163635B1 (en) * 2017-10-30 2018-12-25 Globalfoundries Inc. Asymmetric spacer for preventing epitaxial merge between adjacent devices of a semiconductor and related method
KR102422241B1 (ko) * 2018-02-06 2022-07-18 삼성전자주식회사 소스/드레인 영역을 가지는 반도체 소자

Also Published As

Publication number Publication date
KR102432467B1 (ko) 2022-08-12
US10784379B2 (en) 2020-09-22
US20200403100A1 (en) 2020-12-24
CN109427778B (zh) 2024-03-29
US20190067484A1 (en) 2019-02-28
US11728434B2 (en) 2023-08-15
KR20190023882A (ko) 2019-03-08
CN109427778A (zh) 2019-03-05

Similar Documents

Publication Publication Date Title
SG10201804075VA (en) Semiconductor device and method for fabricating the same
SG10201804984VA (en) Semiconductor devices
SG10201805060XA (en) Semiconductor device and method of manufacturing the same
MX2018007661A (es) Sujetador de superficie moldeado, metodo de fabricacion de sujetador de superficie moldeado y aparato de moldeo.
SG10201805096YA (en) Semiconductor device and method for fabricating the same
EP3273466A3 (en) Semiconductor device and method of manufacturing the same
SG10201803738UA (en) Semiconductor device
SG10201805946SA (en) Semiconductor package
EP2846358A3 (en) Semiconductor device and manufacturing method thereof
EA201890168A1 (ru) Нанопроволока или нанопирамидки, выращенные на графитовой подложке
SG10201803467SA (en) Semiconductor device
TW201614839A (en) Semiconductor structure and method for forming the same
MY171178A (en) Method of reducing residual contamination in singulated semiconductor die
EP2731150A3 (en) Light emitting device and method of fabricating the same
EP2768020A3 (en) Semiconductor devices and methods of fabricating the same
TW201714253A (en) Method of making embedded memory device with silicon-on-insulator substrate
TW201613060A (en) Semiconductor device having terminals formed on a chip package including a plurality of semiconductor chips and manufacturing method thereof
TW201614792A (en) Semiconductor devices and methods for manufacturing the same
TW201612985A (en) Semiconductor device structure and method for forming the same
EP3862134A4 (en) INDIUM PHOSPHIDE SUBSTRATE, SEMICONDUCTOR EPITAXIAL WAFER, AND METHOD FOR PRODUCING INDIUM PHOSPHIDE SUBSTRATE
IL275116A (en) A method for depositing an epitaxial layer in the front part of a semiconductor wafer and a device for performing the method
EP3879010A4 (en) SIC SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF AND MANUFACTURING APPARATUS THEREOF
EP3546622A4 (en) NITRIDE SUBSTRATE SUBSTRATE, MANUFACTURING METHOD AND SEMICONDUCTOR ELEMENT
SG11201808293UA (en) Method for manufacturing semiconductor device
MY189253A (en) Semiconductor wafer comprising a monocrystalline group-iiia nitride layer