SG10201803494SA - Method of Processing Wafer - Google Patents

Method of Processing Wafer

Info

Publication number
SG10201803494SA
SG10201803494SA SG10201803494SA SG10201803494SA SG10201803494SA SG 10201803494S A SG10201803494S A SG 10201803494SA SG 10201803494S A SG10201803494S A SG 10201803494SA SG 10201803494S A SG10201803494S A SG 10201803494SA SG 10201803494S A SG10201803494S A SG 10201803494SA
Authority
SG
Singapore
Prior art keywords
wafer
protective film
processing
processing wafer
onto
Prior art date
Application number
SG10201803494SA
Other languages
English (en)
Inventor
Karl Heinz Priewasser
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201803494SA publication Critical patent/SG10201803494SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
SG10201803494SA 2017-05-18 2018-04-26 Method of Processing Wafer SG10201803494SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102017208405.7A DE102017208405B4 (de) 2017-05-18 2017-05-18 Verfahren zum Bearbeiten eines Wafers und Schutzfolie

Publications (1)

Publication Number Publication Date
SG10201803494SA true SG10201803494SA (en) 2018-12-28

Family

ID=64272078

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201803494SA SG10201803494SA (en) 2017-05-18 2018-04-26 Method of Processing Wafer

Country Status (7)

Country Link
US (2) US11637074B2 (de)
JP (3) JP6888218B2 (de)
KR (1) KR102105114B1 (de)
CN (1) CN108933098A (de)
DE (1) DE102017208405B4 (de)
SG (1) SG10201803494SA (de)
TW (1) TWI683392B (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110663106B (zh) * 2017-05-18 2023-09-22 株式会社迪思科 在加工晶圆中使用的保护片、用于晶圆的处理系统以及晶圆与保护片的组合体
US20220135848A1 (en) 2019-02-26 2022-05-05 Disco Corporation Adhesive sheet for backgrinding and production method for semiconductor wafer
US20220148905A1 (en) 2019-02-26 2022-05-12 Disco Corporation Back grinding adhesive sheet, and method for manufacturing semiconductor wafer
JP7333192B2 (ja) * 2019-04-23 2023-08-24 株式会社ディスコ 移設方法
DE102019211540A1 (de) * 2019-08-01 2021-02-04 Disco Corporation Verfahren zum bearbeiten eines substrats
JP7430515B2 (ja) * 2019-11-06 2024-02-13 株式会社ディスコ ウエーハの処理方法
JP7455470B2 (ja) 2020-03-13 2024-03-26 株式会社ディスコ ウェーハの加工方法
JP2021190611A (ja) * 2020-06-02 2021-12-13 株式会社ディスコ ウェーハの加工方法、保護部材貼着装置、及び、加工装置
JP2022041447A (ja) 2020-09-01 2022-03-11 株式会社ディスコ ウェーハの加工方法
CN112157580A (zh) * 2020-09-26 2021-01-01 绍兴自远磨具有限公司 一种硅片研磨盘及其制备方法和用途
US11587809B2 (en) * 2020-09-30 2023-02-21 Advanced Semiconductor Engineering, Inc. Wafer supporting mechanism and method for wafer dicing
JP2024079914A (ja) 2022-12-01 2024-06-13 株式会社ディスコ 樹脂シート

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JPS58153352A (ja) 1982-03-09 1983-09-12 Toshiba Corp 半導体素子の製造方法
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JP5064985B2 (ja) * 2006-12-05 2012-10-31 古河電気工業株式会社 半導体ウェハの処理方法
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JP2011054827A (ja) 2009-09-03 2011-03-17 Fujitsu Semiconductor Ltd 半導体装置の製造方法及び表面保護テープ
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KR20120023258A (ko) 2010-09-01 2012-03-13 주식회사 이오테크닉스 웨이퍼 가공방법 및 웨이퍼 가공장치
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JP6009217B2 (ja) 2012-05-18 2016-10-19 株式会社ディスコ 保護部材の貼着方法
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KR102061695B1 (ko) * 2012-10-17 2020-01-02 삼성전자주식회사 웨이퍼 가공 방법
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Also Published As

Publication number Publication date
TW201909333A (zh) 2019-03-01
JP2020113778A (ja) 2020-07-27
JP6740542B2 (ja) 2020-08-19
JP6888218B2 (ja) 2021-06-16
DE102017208405A1 (de) 2018-11-22
US11784138B2 (en) 2023-10-10
KR20180127230A (ko) 2018-11-28
JP2019169727A (ja) 2019-10-03
KR102105114B1 (ko) 2020-04-27
US20180337141A1 (en) 2018-11-22
US11637074B2 (en) 2023-04-25
TWI683392B (zh) 2020-01-21
DE102017208405B4 (de) 2024-05-02
US20210151390A1 (en) 2021-05-20
JP2018195805A (ja) 2018-12-06
CN108933098A (zh) 2018-12-04

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