SG10201802538VA - Plate-shaped workpiece processing method - Google Patents

Plate-shaped workpiece processing method

Info

Publication number
SG10201802538VA
SG10201802538VA SG10201802538VA SG10201802538VA SG10201802538VA SG 10201802538V A SG10201802538V A SG 10201802538VA SG 10201802538V A SG10201802538V A SG 10201802538VA SG 10201802538V A SG10201802538V A SG 10201802538VA SG 10201802538V A SG10201802538V A SG 10201802538VA
Authority
SG
Singapore
Prior art keywords
plate
shaped workpiece
cutting
processing method
division line
Prior art date
Application number
SG10201802538VA
Other languages
English (en)
Inventor
Takenouchi Kenji
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201802538VA publication Critical patent/SG10201802538VA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043Making grooves, e.g. cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
SG10201802538VA 2017-04-04 2018-03-27 Plate-shaped workpiece processing method SG10201802538VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017074247A JP2018181900A (ja) 2017-04-04 2017-04-04 板状被加工物の加工方法

Publications (1)

Publication Number Publication Date
SG10201802538VA true SG10201802538VA (en) 2018-11-29

Family

ID=63525722

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201802538VA SG10201802538VA (en) 2017-04-04 2018-03-27 Plate-shaped workpiece processing method

Country Status (7)

Country Link
US (1) US10665482B2 (de)
JP (1) JP2018181900A (de)
KR (1) KR20180112696A (de)
CN (1) CN108695247A (de)
DE (1) DE102018205031A1 (de)
SG (1) SG10201802538VA (de)
TW (1) TW201838013A (de)

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0574932A (ja) * 1991-09-17 1993-03-26 Fujitsu Ltd 半導体ウエハのダイシング方法
JPH06349926A (ja) 1993-06-12 1994-12-22 Hitachi Ltd 半導体装置
JPH0955573A (ja) 1995-08-10 1997-02-25 Disco Abrasive Syst Ltd 樹脂基板の切削方法
US6310017B1 (en) 1999-02-01 2001-10-30 Ct Associates, Inc. Cleaner composition, method for making and using same
JP3440888B2 (ja) 1999-06-21 2003-08-25 株式会社村田製作所 ダイシングブレード及び電子部品の製造方法
US6280298B1 (en) 1999-11-24 2001-08-28 Intel Corporation Test probe cleaning
TWI228780B (en) * 2000-05-11 2005-03-01 Disco Corp Semiconductor wafer dividing method
JP2002231658A (ja) * 2001-01-30 2002-08-16 Takemoto Denki Seisakusho:Kk 半導体ウエハーの切断方法
US6596562B1 (en) 2002-01-03 2003-07-22 Intel Corporation Semiconductor wafer singulation method
US6791197B1 (en) 2002-08-26 2004-09-14 Integrated Device Technology, Inc. Reducing layer separation and cracking in semiconductor devices
US7855130B2 (en) * 2003-04-21 2010-12-21 International Business Machines Corporation Corrosion inhibitor additives to prevent semiconductor device bond-pad corrosion during wafer dicing operations
US7087452B2 (en) 2003-04-22 2006-08-08 Intel Corporation Edge arrangements for integrated circuit chips
JP4231349B2 (ja) 2003-07-02 2009-02-25 株式会社ディスコ レーザー加工方法およびレーザー加工装置
JP2006140341A (ja) 2004-11-12 2006-06-01 Disco Abrasive Syst Ltd ウエーハの分割方法
JP4751634B2 (ja) 2005-03-31 2011-08-17 富士通セミコンダクター株式会社 半導体装置の製造方法
US20080191318A1 (en) 2007-02-09 2008-08-14 Advanced Micro Devices, Inc. Semiconductor device and method of sawing semiconductor device
US8629532B2 (en) 2007-05-08 2014-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor wafer with assisting dicing structure and dicing method thereof
JP5419596B2 (ja) 2009-09-02 2014-02-19 兼房株式会社 回転工具のための流体供給機構
JP5480923B2 (ja) 2011-05-13 2014-04-23 シャープ株式会社 半導体モジュールの製造方法及び半導体モジュール
JP2013161998A (ja) 2012-02-07 2013-08-19 Disco Abrasive Syst Ltd 切削方法
US8952413B2 (en) 2012-03-08 2015-02-10 Micron Technology, Inc. Etched trenches in bond materials for die singulation, and associated systems and methods
US8859397B2 (en) 2012-07-13 2014-10-14 Applied Materials, Inc. Method of coating water soluble mask for laser scribing and plasma etch
US9085049B2 (en) 2012-11-30 2015-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for manufacturing semiconductor device
US9054192B1 (en) * 2013-12-20 2015-06-09 International Business Machines Corporation Integration of Ge-containing fins and compound semiconductor fins
JP6274926B2 (ja) * 2014-03-17 2018-02-07 株式会社ディスコ 切削方法
US9460963B2 (en) 2014-03-26 2016-10-04 Globalfoundries Inc. Self-aligned contacts and methods of fabrication
US9275902B2 (en) 2014-03-26 2016-03-01 Applied Materials, Inc. Dicing processes for thin wafers with bumps on wafer backside
US9130057B1 (en) 2014-06-30 2015-09-08 Applied Materials, Inc. Hybrid dicing process using a blade and laser
JP6426407B2 (ja) * 2014-09-03 2018-11-21 株式会社ディスコ ウエーハの加工方法
WO2016052444A1 (ja) 2014-09-29 2016-04-07 リンテック株式会社 半導体ウエハ加工用シート用基材、半導体ウエハ加工用シート、および半導体装置の製造方法
US10535554B2 (en) 2016-12-14 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor die having edge with multiple gradients and method for forming the same

Also Published As

Publication number Publication date
US20180286709A1 (en) 2018-10-04
CN108695247A (zh) 2018-10-23
TW201838013A (zh) 2018-10-16
KR20180112696A (ko) 2018-10-12
DE102018205031A1 (de) 2018-10-04
JP2018181900A (ja) 2018-11-15
US10665482B2 (en) 2020-05-26

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