SG10201600407SA - Semiconductor device and manufacturing method of the same - Google Patents

Semiconductor device and manufacturing method of the same

Info

Publication number
SG10201600407SA
SG10201600407SA SG10201600407SA SG10201600407SA SG10201600407SA SG 10201600407S A SG10201600407S A SG 10201600407SA SG 10201600407S A SG10201600407S A SG 10201600407SA SG 10201600407S A SG10201600407S A SG 10201600407SA SG 10201600407S A SG10201600407S A SG 10201600407SA
Authority
SG
Singapore
Prior art keywords
manufacturing
same
semiconductor device
semiconductor
Prior art date
Application number
SG10201600407SA
Other languages
English (en)
Inventor
Yamazaki Shunpei
Arai Yasuyuki
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG10201600407SA publication Critical patent/SG10201600407SA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/657—Lateral DMOS [LDMOS] FETs having substrates comprising insulating layers, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/158—Dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
SG10201600407SA 2009-02-20 2010-02-04 Semiconductor device and manufacturing method of the same SG10201600407SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009037717 2009-02-20

Publications (1)

Publication Number Publication Date
SG10201600407SA true SG10201600407SA (en) 2016-02-26

Family

ID=42621710

Family Applications (3)

Application Number Title Priority Date Filing Date
SG10201600407SA SG10201600407SA (en) 2009-02-20 2010-02-04 Semiconductor device and manufacturing method of the same
SG2012061206A SG183740A1 (en) 2009-02-20 2010-02-04 Semiconductor device and manufacturing method of the same
SG201000795-3A SG164324A1 (en) 2009-02-20 2010-02-04 Semiconductor device and manufacturing method of the same

Family Applications After (2)

Application Number Title Priority Date Filing Date
SG2012061206A SG183740A1 (en) 2009-02-20 2010-02-04 Semiconductor device and manufacturing method of the same
SG201000795-3A SG164324A1 (en) 2009-02-20 2010-02-04 Semiconductor device and manufacturing method of the same

Country Status (4)

Country Link
US (2) US8368083B2 (enExample)
JP (1) JP2010219515A (enExample)
CN (1) CN101814526B (enExample)
SG (3) SG10201600407SA (enExample)

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JP2013030618A (ja) 2011-07-28 2013-02-07 Rohm Co Ltd 半導体装置
JP5884585B2 (ja) * 2012-03-21 2016-03-15 住友電気工業株式会社 炭化珪素半導体装置の製造方法
US8653600B2 (en) * 2012-06-01 2014-02-18 Power Integrations, Inc. High-voltage monolithic schottky device structure
JP6136573B2 (ja) * 2013-05-27 2017-05-31 富士通株式会社 半導体装置及び半導体装置の製造方法
US9543396B2 (en) 2013-12-13 2017-01-10 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped regions
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates
US10403509B2 (en) * 2014-04-04 2019-09-03 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealing
JP2020092282A (ja) * 2020-02-25 2020-06-11 ローム株式会社 ショットキーバリアダイオード
CN114256072B (zh) * 2020-09-25 2025-08-26 中芯国际集成电路制造（天津）有限公司 半导体结构及其形成方法
CN116741639B (zh) * 2023-06-20 2025-04-18 中国科学院上海微系统与信息技术研究所 半导体器件的制备方法及半导体器件
CN116646401B (zh) * 2023-07-19 2024-01-23 成都蓉矽半导体有限公司 一种碳化硅异质结的共源共栅mosfet器件
CN117727838B (zh) * 2024-02-07 2024-05-10 晶科能源(海宁)有限公司 太阳能电池及其制备方法、光伏组件

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Also Published As

Publication number Publication date
SG183740A1 (en) 2012-09-27
US8368083B2 (en) 2013-02-05
CN101814526A (zh) 2010-08-25
US20100213470A1 (en) 2010-08-26
SG164324A1 (en) 2010-09-29
US8592267B2 (en) 2013-11-26
CN101814526B (zh) 2016-02-03
JP2010219515A (ja) 2010-09-30
US20130130447A1 (en) 2013-05-23

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