SG10201505459WA - Wafer processing method - Google Patents

Wafer processing method

Info

Publication number
SG10201505459WA
SG10201505459WA SG10201505459WA SG10201505459WA SG10201505459WA SG 10201505459W A SG10201505459W A SG 10201505459WA SG 10201505459W A SG10201505459W A SG 10201505459WA SG 10201505459W A SG10201505459W A SG 10201505459WA SG 10201505459W A SG10201505459W A SG 10201505459WA
Authority
SG
Singapore
Prior art keywords
processing method
wafer processing
wafer
processing
Prior art date
Application number
SG10201505459WA
Other languages
English (en)
Inventor
Tanaka Makoto
Lu Xin
Liao Sax
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201505459WA publication Critical patent/SG10201505459WA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dicing (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG10201505459WA 2014-07-30 2015-07-13 Wafer processing method SG10201505459WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014155179A JP6282194B2 (ja) 2014-07-30 2014-07-30 ウェーハの加工方法

Publications (1)

Publication Number Publication Date
SG10201505459WA true SG10201505459WA (en) 2016-02-26

Family

ID=55180801

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201505459WA SG10201505459WA (en) 2014-07-30 2015-07-13 Wafer processing method

Country Status (4)

Country Link
US (1) US9418908B2 (ja)
JP (1) JP6282194B2 (ja)
SG (1) SG10201505459WA (ja)
TW (1) TWI657494B (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6738687B2 (ja) * 2016-08-25 2020-08-12 株式会社ディスコ パッケージウエーハの加工方法
JP6779574B2 (ja) * 2016-12-14 2020-11-04 株式会社ディスコ インターポーザの製造方法
JP6773554B2 (ja) * 2016-12-27 2020-10-21 株式会社ディスコ パッケージデバイスチップの製造方法及び加工装置
JP6906836B2 (ja) * 2017-01-27 2021-07-21 株式会社ディスコ 積層ドレッシングボードの使用方法
JP2018125479A (ja) * 2017-02-03 2018-08-09 株式会社ディスコ ウェーハの加工方法
JP6812079B2 (ja) * 2017-03-13 2021-01-13 株式会社ディスコ 被加工物の加工方法
JP2018206791A (ja) * 2017-05-30 2018-12-27 株式会社ディスコ ウエーハの分割方法
JP7126849B2 (ja) * 2018-04-13 2022-08-29 株式会社ディスコ 加工装置
JP7150401B2 (ja) * 2018-11-20 2022-10-11 株式会社ディスコ 被加工物の加工方法
JP7282450B2 (ja) * 2019-02-05 2023-05-29 株式会社ディスコ パッケージ基板の加工方法
CN112846967A (zh) * 2021-01-05 2021-05-28 宁波舜邦模具科技有限公司 一种模具导柱孔加工装置及其加工工艺
JP2022164088A (ja) * 2021-04-15 2022-10-27 株式会社ディスコ パッケージ基板の加工方法
CN114783865B (zh) * 2022-04-13 2023-02-10 苏州优力科瑞半导体科技有限公司 一种划片切割方法及系统
JP7433565B1 (ja) 2023-06-22 2024-02-19 三菱電機株式会社 加工ノズルおよびレーザ加工機

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2892459B2 (ja) 1990-08-20 1999-05-17 株式会社ディスコ 精密切削装置におけるブレードの位置調整方法
US7168352B2 (en) * 1999-09-13 2007-01-30 Advanced Semiconductor Engineering, Inc. Process for sawing substrate strip
JP4153325B2 (ja) * 2003-02-13 2008-09-24 株式会社ディスコ 半導体ウエーハの加工方法
JP4342832B2 (ja) * 2003-05-16 2009-10-14 株式会社東芝 半導体装置およびその製造方法
JP4377702B2 (ja) * 2004-01-08 2009-12-02 株式会社ディスコ 切削溝の計測方法
GB2420443B (en) * 2004-11-01 2009-09-16 Xsil Technology Ltd Increasing die strength by etching during or after dicing
JP2007266352A (ja) * 2006-03-29 2007-10-11 Disco Abrasive Syst Ltd ウエーハの加工方法
JP5583320B2 (ja) * 2007-12-05 2014-09-03 ピーエスフォー ルクスコ エスエイアールエル 半導体ウエハ及びその製造方法
JP2009176793A (ja) * 2008-01-22 2009-08-06 Disco Abrasive Syst Ltd ウエーハの分割方法
JP5171294B2 (ja) * 2008-02-06 2013-03-27 株式会社ディスコ レーザ加工方法
JP5214332B2 (ja) * 2008-05-27 2013-06-19 株式会社ディスコ ウエーハの切削方法
JP5122378B2 (ja) * 2008-06-09 2013-01-16 株式会社ディスコ 板状物の分割方法
JP5394172B2 (ja) * 2009-09-03 2014-01-22 株式会社ディスコ 加工方法
JP5465042B2 (ja) * 2010-03-01 2014-04-09 株式会社ディスコ パッケージ基板の加工方法
US8642448B2 (en) * 2010-06-22 2014-02-04 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
JP2012151225A (ja) * 2011-01-18 2012-08-09 Disco Abrasive Syst Ltd 切削溝の計測方法
JP5950502B2 (ja) * 2011-03-23 2016-07-13 株式会社ディスコ ウエーハの分割方法
US8557684B2 (en) * 2011-08-23 2013-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional integrated circuit (3DIC) formation process
JP5948034B2 (ja) * 2011-09-27 2016-07-06 株式会社ディスコ アライメント方法
US8896102B2 (en) * 2013-01-22 2014-11-25 Freescale Semiconductor, Inc. Die edge sealing structures and related fabrication methods

Also Published As

Publication number Publication date
TWI657494B (zh) 2019-04-21
JP2016032075A (ja) 2016-03-07
TW201608620A (zh) 2016-03-01
JP6282194B2 (ja) 2018-02-21
US9418908B2 (en) 2016-08-16
US20160035635A1 (en) 2016-02-04

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