SG10201505459WA - Wafer processing method - Google Patents
Wafer processing methodInfo
- Publication number
- SG10201505459WA SG10201505459WA SG10201505459WA SG10201505459WA SG10201505459WA SG 10201505459W A SG10201505459W A SG 10201505459WA SG 10201505459W A SG10201505459W A SG 10201505459WA SG 10201505459W A SG10201505459W A SG 10201505459WA SG 10201505459W A SG10201505459W A SG 10201505459WA
- Authority
- SG
- Singapore
- Prior art keywords
- processing method
- wafer processing
- wafer
- processing
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014155179A JP6282194B2 (ja) | 2014-07-30 | 2014-07-30 | ウェーハの加工方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201505459WA true SG10201505459WA (en) | 2016-02-26 |
Family
ID=55180801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201505459WA SG10201505459WA (en) | 2014-07-30 | 2015-07-13 | Wafer processing method |
Country Status (4)
Country | Link |
---|---|
US (1) | US9418908B2 (ja) |
JP (1) | JP6282194B2 (ja) |
SG (1) | SG10201505459WA (ja) |
TW (1) | TWI657494B (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6738687B2 (ja) * | 2016-08-25 | 2020-08-12 | 株式会社ディスコ | パッケージウエーハの加工方法 |
JP6779574B2 (ja) * | 2016-12-14 | 2020-11-04 | 株式会社ディスコ | インターポーザの製造方法 |
JP6773554B2 (ja) * | 2016-12-27 | 2020-10-21 | 株式会社ディスコ | パッケージデバイスチップの製造方法及び加工装置 |
JP6906836B2 (ja) * | 2017-01-27 | 2021-07-21 | 株式会社ディスコ | 積層ドレッシングボードの使用方法 |
JP2018125479A (ja) * | 2017-02-03 | 2018-08-09 | 株式会社ディスコ | ウェーハの加工方法 |
JP6812079B2 (ja) * | 2017-03-13 | 2021-01-13 | 株式会社ディスコ | 被加工物の加工方法 |
JP2018206791A (ja) * | 2017-05-30 | 2018-12-27 | 株式会社ディスコ | ウエーハの分割方法 |
JP7126849B2 (ja) * | 2018-04-13 | 2022-08-29 | 株式会社ディスコ | 加工装置 |
JP7150401B2 (ja) * | 2018-11-20 | 2022-10-11 | 株式会社ディスコ | 被加工物の加工方法 |
JP7282450B2 (ja) * | 2019-02-05 | 2023-05-29 | 株式会社ディスコ | パッケージ基板の加工方法 |
CN112846967A (zh) * | 2021-01-05 | 2021-05-28 | 宁波舜邦模具科技有限公司 | 一种模具导柱孔加工装置及其加工工艺 |
JP2022164088A (ja) * | 2021-04-15 | 2022-10-27 | 株式会社ディスコ | パッケージ基板の加工方法 |
CN114783865B (zh) * | 2022-04-13 | 2023-02-10 | 苏州优力科瑞半导体科技有限公司 | 一种划片切割方法及系统 |
JP7433565B1 (ja) | 2023-06-22 | 2024-02-19 | 三菱電機株式会社 | 加工ノズルおよびレーザ加工機 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2892459B2 (ja) | 1990-08-20 | 1999-05-17 | 株式会社ディスコ | 精密切削装置におけるブレードの位置調整方法 |
US7168352B2 (en) * | 1999-09-13 | 2007-01-30 | Advanced Semiconductor Engineering, Inc. | Process for sawing substrate strip |
JP4153325B2 (ja) * | 2003-02-13 | 2008-09-24 | 株式会社ディスコ | 半導体ウエーハの加工方法 |
JP4342832B2 (ja) * | 2003-05-16 | 2009-10-14 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP4377702B2 (ja) * | 2004-01-08 | 2009-12-02 | 株式会社ディスコ | 切削溝の計測方法 |
GB2420443B (en) * | 2004-11-01 | 2009-09-16 | Xsil Technology Ltd | Increasing die strength by etching during or after dicing |
JP2007266352A (ja) * | 2006-03-29 | 2007-10-11 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP5583320B2 (ja) * | 2007-12-05 | 2014-09-03 | ピーエスフォー ルクスコ エスエイアールエル | 半導体ウエハ及びその製造方法 |
JP2009176793A (ja) * | 2008-01-22 | 2009-08-06 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP5171294B2 (ja) * | 2008-02-06 | 2013-03-27 | 株式会社ディスコ | レーザ加工方法 |
JP5214332B2 (ja) * | 2008-05-27 | 2013-06-19 | 株式会社ディスコ | ウエーハの切削方法 |
JP5122378B2 (ja) * | 2008-06-09 | 2013-01-16 | 株式会社ディスコ | 板状物の分割方法 |
JP5394172B2 (ja) * | 2009-09-03 | 2014-01-22 | 株式会社ディスコ | 加工方法 |
JP5465042B2 (ja) * | 2010-03-01 | 2014-04-09 | 株式会社ディスコ | パッケージ基板の加工方法 |
US8642448B2 (en) * | 2010-06-22 | 2014-02-04 | Applied Materials, Inc. | Wafer dicing using femtosecond-based laser and plasma etch |
JP2012151225A (ja) * | 2011-01-18 | 2012-08-09 | Disco Abrasive Syst Ltd | 切削溝の計測方法 |
JP5950502B2 (ja) * | 2011-03-23 | 2016-07-13 | 株式会社ディスコ | ウエーハの分割方法 |
US8557684B2 (en) * | 2011-08-23 | 2013-10-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Three-dimensional integrated circuit (3DIC) formation process |
JP5948034B2 (ja) * | 2011-09-27 | 2016-07-06 | 株式会社ディスコ | アライメント方法 |
US8896102B2 (en) * | 2013-01-22 | 2014-11-25 | Freescale Semiconductor, Inc. | Die edge sealing structures and related fabrication methods |
-
2014
- 2014-07-30 JP JP2014155179A patent/JP6282194B2/ja active Active
-
2015
- 2015-06-15 TW TW104119249A patent/TWI657494B/zh active
- 2015-07-13 SG SG10201505459WA patent/SG10201505459WA/en unknown
- 2015-07-28 US US14/811,470 patent/US9418908B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI657494B (zh) | 2019-04-21 |
JP2016032075A (ja) | 2016-03-07 |
TW201608620A (zh) | 2016-03-01 |
JP6282194B2 (ja) | 2018-02-21 |
US9418908B2 (en) | 2016-08-16 |
US20160035635A1 (en) | 2016-02-04 |
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