SG10201504089SA - Wafer processing method - Google Patents

Wafer processing method

Info

Publication number
SG10201504089SA
SG10201504089SA SG10201504089SA SG10201504089SA SG10201504089SA SG 10201504089S A SG10201504089S A SG 10201504089SA SG 10201504089S A SG10201504089S A SG 10201504089SA SG 10201504089S A SG10201504089S A SG 10201504089SA SG 10201504089S A SG10201504089S A SG 10201504089SA
Authority
SG
Singapore
Prior art keywords
processing method
wafer processing
wafer
processing
Prior art date
Application number
SG10201504089SA
Other languages
English (en)
Inventor
Nakamura Masaru
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201504089SA publication Critical patent/SG10201504089SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02076—Cleaning after the substrates have been singulated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG10201504089SA 2014-06-10 2015-05-25 Wafer processing method SG10201504089SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014119409A JP2015233077A (ja) 2014-06-10 2014-06-10 ウエーハの加工方法

Publications (1)

Publication Number Publication Date
SG10201504089SA true SG10201504089SA (en) 2016-01-28

Family

ID=54770175

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201504089SA SG10201504089SA (en) 2014-06-10 2015-05-25 Wafer processing method

Country Status (6)

Country Link
US (1) US20150357242A1 (zh)
JP (1) JP2015233077A (zh)
KR (1) KR20150141875A (zh)
CN (1) CN105206571B (zh)
SG (1) SG10201504089SA (zh)
TW (1) TW201601210A (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9514925B1 (en) * 2015-09-10 2016-12-06 Amazon Technologies, Inc. Protective coating for silicon substrate
JP6731793B2 (ja) * 2016-06-08 2020-07-29 株式会社ディスコ ウェーハ加工システム
JP6707292B2 (ja) * 2016-10-14 2020-06-10 株式会社ディスコ 積層チップの製造方法
US10363629B2 (en) * 2017-06-01 2019-07-30 Applied Materials, Inc. Mitigation of particle contamination for wafer dicing processes
JP7015668B2 (ja) * 2017-10-11 2022-02-03 株式会社ディスコ 板状物の分割装置
JP7154698B2 (ja) * 2018-09-06 2022-10-18 株式会社ディスコ ウェーハの加工方法
JP7175560B2 (ja) * 2018-09-06 2022-11-21 株式会社ディスコ ウェーハの加工方法
JP7282453B2 (ja) * 2019-02-15 2023-05-29 株式会社ディスコ ウェーハの加工方法
CN111063648A (zh) * 2019-11-29 2020-04-24 力成科技（苏州）有限公司 一种晶圆胶膜无粘连分离工艺
KR102441184B1 (ko) * 2020-07-15 2022-09-07 주식회사 기가레인 필름 교환이 용이한 전사 장치 및 필름 교환 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007648A (ja) 2001-06-18 2003-01-10 Disco Abrasive Syst Ltd 半導体ウェーハの分割システム
JP2003188129A (ja) * 2001-12-19 2003-07-04 Okamoto Machine Tool Works Ltd デバイスウエハのデバイス面保護構造
JP4296052B2 (ja) * 2003-07-30 2009-07-15 シャープ株式会社 半導体装置の製造方法
JP2008235650A (ja) * 2007-03-22 2008-10-02 Disco Abrasive Syst Ltd デバイスの製造方法
WO2009001732A1 (ja) * 2007-06-22 2008-12-31 Denki Kagaku Kogyo Kabushiki Kaisha 半導体ウエハ研削方法とそれに用いる樹脂組成物及び保護シート
JP2009224659A (ja) * 2008-03-18 2009-10-01 Disco Abrasive Syst Ltd ワークの分割方法
JP2009231629A (ja) * 2008-03-24 2009-10-08 Sekisui Chem Co Ltd 半導体ウエハの加工方法
JP2011129606A (ja) * 2009-12-16 2011-06-30 Furukawa Electric Co Ltd:The 半導体ウエハの加工方法
JP2013008831A (ja) * 2011-06-24 2013-01-10 Disco Abrasive Syst Ltd ウエーハの加工方法
US20130032519A1 (en) * 2011-08-02 2013-02-07 Bogdan Murawski Biological sewage treatment device
JP6047353B2 (ja) * 2012-09-20 2016-12-21 株式会社ディスコ 加工方法

Also Published As

Publication number Publication date
US20150357242A1 (en) 2015-12-10
JP2015233077A (ja) 2015-12-24
TW201601210A (zh) 2016-01-01
CN105206571B (zh) 2019-05-31
CN105206571A (zh) 2015-12-30
KR20150141875A (ko) 2015-12-21

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