CN111063648A - 一种晶圆胶膜无粘连分离工艺 - Google Patents

一种晶圆胶膜无粘连分离工艺 Download PDF

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Publication number
CN111063648A
CN111063648A CN201911206353.6A CN201911206353A CN111063648A CN 111063648 A CN111063648 A CN 111063648A CN 201911206353 A CN201911206353 A CN 201911206353A CN 111063648 A CN111063648 A CN 111063648A
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wafer
adhesive film
adhesion
separation process
cutting
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CN201911206353.6A
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沈黎艳
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Powertech Technology Suzhou Ltd
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Powertech Technology Suzhou Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesive Tapes (AREA)

Abstract

本发明公开了一种晶圆胶膜无粘连分离工艺，其涉及芯片封装技术领域。旨在解决现有晶圆切割过程中胶膜分离后会粘连的问题。其技术方案要点包括以下步骤：S100、对晶圆进行切割；S200、在已完成切割的晶圆背面贴上胶膜；S300、对晶圆和胶膜进行冷冻；S400、对冷冻后的晶圆进行扩崩，使胶膜分离。本发明通过冷冻扩崩不仅能够解决薄片胶膜粘连的问题，在一定程度上还能改善切割品质。

Description

一种晶圆胶膜无粘连分离工艺
技术领域
本发明涉及芯片封装技术领域，更具体地说，它涉及一种晶圆胶膜无粘连分离工艺。
背景技术
目前针对薄片工艺中使用的胶膜，一般是在晶圆切割过程中一起由切割刀片切穿以达到薄片与薄片之间的分离。
但是，薄片加上胶膜的切割使得刀片不能很好的自研磨，使其锋利程度下降，同时在切割过程中产生的热量使胶膜产生回黏，则薄片与薄片有粘连，未完全分离。
发明内容
针对现有技术存在的不足，本发明的目的在于提供一种晶圆胶膜无粘连分离工艺，其具有胶膜分离无粘连的优势。
为实现上述目的，本发明提供了如下技术方案：
一种晶圆胶膜无粘连分离工艺，包括以下步骤：
S100、对晶圆进行切割；
S200、在已完成切割的晶圆背面贴上胶膜；
S300、对晶圆和胶膜进行冷冻；
S400、对冷冻后的晶圆进行扩崩，使胶膜分离。
进一步地，在步骤S100中，使用刀片对晶圆进行切割。
进一步地，在步骤S300中，冷冻温度小于0℃，且大于-10℃。
综上所述，本发明具有以下有益效果：
1、在已经完成切割的晶圆背面贴上胶膜后，先使其冷冻，再利用其材料在冷冻后变脆的特性，进行扩崩。由于切割道中的胶膜没有支撑点，在其冷冻受力后崩裂，达到胶膜分离的目的，而且分离后的胶膜不粘连；
2、冷冻扩崩不仅能够解决薄片胶膜粘连的问题，在一定程度上还能改善切割品质。
附图说明
图1为实施例中胶膜冷冻后的示意图；
图2为实施例中胶膜扩崩后的示意图。
具体实施方式
以下结合附图对本发明作进一步详细说明。
本具体实施例仅仅是对本发明的解释，其并不是对本发明的限制，本领域技术人员在阅读完本说明书后可以根据需要对本实施例做出没有创造性贡献的修改，但只要在本发明的权利要求范围内都受到专利法的保护。
实施例：
一种晶圆胶膜无粘连分离工艺，其包括以下步骤：
S100、对晶圆进行切割；
S200、在已完成切割的晶圆背面贴上胶膜；
S300、对晶圆和胶膜进行冷冻，其实施效果参照图1；
S400、对冷冻后的晶圆进行扩崩，使胶膜分离，其实施效果参照图2。
其中，在步骤S100中，使用刀片对晶圆进行切割。
其中，在步骤S300中，冷冻温度小于0℃，且大于-10℃。
工作原理如下：
在已经完成切割的晶圆背面贴上胶膜后，先使其冷冻，再利用其材料在冷冻后变脆的特性，进行扩崩。由于切割道中的胶膜没有支撑点，在其冷冻受力后崩裂，达到胶膜分离的目的，而且分离后的胶膜不粘连。

Claims (3)

1.一种晶圆胶膜无粘连分离工艺，其特征在于，包括以下步骤：
S100、对晶圆进行切割；
S200、在已完成切割的晶圆背面贴上胶膜；
S300、对晶圆和胶膜进行冷冻；
S400、对冷冻后的晶圆进行扩崩，使胶膜分离。
2.根据权利要求1所述的晶圆胶膜无粘连分离工艺，其特征在于：在步骤S100中，使用刀片对晶圆进行切割。
3.根据权利要求1或2所述的晶圆胶膜无粘连分离工艺，其特征在于：在步骤S300中，冷冻温度小于0℃，且大于-10℃。
CN201911206353.6A 2019-11-29 2019-11-29 一种晶圆胶膜无粘连分离工艺 Pending CN111063648A (zh)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101577217A (zh) * 2008-05-09 2009-11-11 株式会社迪思科 膜状粘接剂的断裂装置和断裂方法
CN105206571A (zh) * 2014-06-10 2015-12-30 株式会社迪思科 晶片的加工方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101577217A (zh) * 2008-05-09 2009-11-11 株式会社迪思科 膜状粘接剂的断裂装置和断裂方法
CN105206571A (zh) * 2014-06-10 2015-12-30 株式会社迪思科 晶片的加工方法

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Application publication date: 20200424