SG10201404645QA - Methods of forming gate structures with multiple work functions and the resulting products - Google Patents
Methods of forming gate structures with multiple work functions and the resulting productsInfo
- Publication number
- SG10201404645QA SG10201404645QA SG10201404645QA SG10201404645QA SG10201404645QA SG 10201404645Q A SG10201404645Q A SG 10201404645QA SG 10201404645Q A SG10201404645Q A SG 10201404645QA SG 10201404645Q A SG10201404645Q A SG 10201404645QA SG 10201404645Q A SG10201404645Q A SG 10201404645QA
- Authority
- SG
- Singapore
- Prior art keywords
- methods
- gate structures
- resulting products
- work functions
- forming gate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/512—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being parallel to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/069,782 US9012319B1 (en) | 2013-11-01 | 2013-11-01 | Methods of forming gate structures with multiple work functions and the resulting products |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201404645QA true SG10201404645QA (en) | 2015-06-29 |
Family
ID=52822525
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201404645QA SG10201404645QA (en) | 2013-11-01 | 2014-08-05 | Methods of forming gate structures with multiple work functions and the resulting products |
Country Status (6)
Country | Link |
---|---|
US (1) | US9012319B1 (zh) |
KR (1) | KR20150051147A (zh) |
CN (1) | CN104616994A (zh) |
DE (1) | DE102014222289B4 (zh) |
SG (1) | SG10201404645QA (zh) |
TW (1) | TWI536544B (zh) |
Families Citing this family (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150118836A1 (en) * | 2013-10-28 | 2015-04-30 | United Microelectronics Corp. | Method of fabricating semiconductor device |
US9337297B2 (en) * | 2013-12-31 | 2016-05-10 | Texas Instruments Incorporated | Fringe capacitance reduction for replacement gate CMOS |
US9583362B2 (en) * | 2014-01-17 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Metal gate structure and manufacturing method thereof |
CN104821296B (zh) * | 2014-01-30 | 2017-11-28 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
KR102190673B1 (ko) * | 2014-03-12 | 2020-12-14 | 삼성전자주식회사 | 중간갭 일함수 금속 게이트 전극을 갖는 반도체 소자 |
US9735231B2 (en) * | 2014-03-31 | 2017-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Block layer in the metal gate of MOS devices |
CN105097461B (zh) * | 2014-04-21 | 2018-03-30 | 中芯国际集成电路制造(北京)有限公司 | 一种半导体器件的制造方法 |
US9190488B1 (en) * | 2014-08-13 | 2015-11-17 | Globalfoundries Inc. | Methods of forming gate structure of semiconductor devices and the resulting devices |
US10164049B2 (en) * | 2014-10-06 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and formation method of semiconductor device with gate stack |
US10134861B2 (en) * | 2014-10-08 | 2018-11-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure and method for forming the same |
US9466494B2 (en) * | 2014-11-18 | 2016-10-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Selective growth for high-aspect ration metal fill |
KR102263765B1 (ko) * | 2015-04-08 | 2021-06-09 | 에스케이하이닉스 주식회사 | 반도체 소자, 그의 제조 방법, 및 이를 구비하는 반도체 장치 |
KR102376503B1 (ko) * | 2015-04-23 | 2022-03-18 | 삼성전자주식회사 | 집적회로 장치 및 이의 제조 방법 |
US9818841B2 (en) | 2015-05-15 | 2017-11-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure with unleveled gate structure and method for forming the same |
US9583485B2 (en) | 2015-05-15 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin field effect transistor (FinFET) device structure with uneven gate structure and method for forming the same |
KR102290685B1 (ko) * | 2015-06-04 | 2021-08-17 | 삼성전자주식회사 | 반도체 장치 |
KR20160148795A (ko) * | 2015-06-16 | 2016-12-27 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
CN106328501B (zh) * | 2015-06-23 | 2019-01-01 | 中国科学院微电子研究所 | 半导体器件的制造方法 |
US10861701B2 (en) * | 2015-06-29 | 2020-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10090396B2 (en) | 2015-07-20 | 2018-10-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating metal gate devices and resulting structures |
CN106409830B (zh) * | 2015-07-27 | 2020-05-05 | 联华电子股份有限公司 | 具有金属栅极的半导体元件及其制作方法 |
CN106409764B (zh) * | 2015-08-03 | 2021-01-12 | 联华电子股份有限公司 | 制作半导体元件的方法 |
CN106601606B (zh) | 2015-10-19 | 2019-09-20 | 中芯国际集成电路制造(上海)有限公司 | Nmos器件、半导体装置及其制造方法 |
US9853123B2 (en) * | 2015-10-28 | 2017-12-26 | United Microelectronics Corp. | Semiconductor structure and fabrication method thereof |
US9583486B1 (en) * | 2015-11-19 | 2017-02-28 | International Business Machines Corporation | Stable work function for narrow-pitch devices |
US9490255B1 (en) * | 2015-12-01 | 2016-11-08 | International Business Machines Corporation | Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments |
KR102474431B1 (ko) | 2015-12-08 | 2022-12-06 | 삼성전자주식회사 | 반도체 소자의 제조방법 |
US9865703B2 (en) * | 2015-12-31 | 2018-01-09 | International Business Machines Corporation | High-K layer chamfering to prevent oxygen ingress in replacement metal gate (RMG) process |
CN106952874B (zh) * | 2016-01-06 | 2019-11-01 | 中芯国际集成电路制造(上海)有限公司 | 多阈值电压鳍式晶体管的形成方法 |
US9960161B2 (en) * | 2016-01-12 | 2018-05-01 | International Business Machines Corporation | Low resistive electrode for an extendable high-k metal gate stack |
US9583400B1 (en) * | 2016-01-15 | 2017-02-28 | International Business Machines Corporation | Gate stack with tunable work function |
US10079182B2 (en) * | 2016-01-15 | 2018-09-18 | International Business Machines Corporation | Field effect transistor gate stack |
US9559016B1 (en) * | 2016-01-15 | 2017-01-31 | International Business Machines Corporation | Semiconductor device having a gate stack with tunable work function |
US9859169B2 (en) * | 2016-01-15 | 2018-01-02 | International Business Machines Corporation | Field effect transistor stack with tunable work function |
US10431583B2 (en) | 2016-02-11 | 2019-10-01 | Samsung Electronics Co., Ltd. | Semiconductor device including transistors with adjusted threshold voltages |
US9899264B2 (en) | 2016-06-30 | 2018-02-20 | International Business Machines Corporation | Integrated metal gate CMOS devices |
CN107591437B (zh) * | 2016-07-07 | 2020-03-10 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
US9640540B1 (en) * | 2016-07-19 | 2017-05-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and method for an SRAM circuit |
KR102553260B1 (ko) * | 2016-08-03 | 2023-07-07 | 삼성전자 주식회사 | 집적회로 소자 및 그 제조 방법 |
US9947594B2 (en) * | 2016-09-19 | 2018-04-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9837507B1 (en) * | 2016-09-30 | 2017-12-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20180138123A1 (en) * | 2016-11-15 | 2018-05-17 | Globalfoundries Inc. | Interconnect structure and method of forming the same |
CN108074815B (zh) * | 2016-11-17 | 2021-04-02 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
US10163899B2 (en) * | 2016-11-30 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Temperature compensation circuits |
CN108122844B (zh) * | 2016-11-30 | 2020-06-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
KR102664033B1 (ko) | 2017-02-06 | 2024-05-07 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
KR20180102273A (ko) * | 2017-03-07 | 2018-09-17 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
US10546785B2 (en) | 2017-03-09 | 2020-01-28 | International Business Machines Corporation | Method to recess cobalt for gate metal application |
KR102363115B1 (ko) * | 2017-03-17 | 2022-02-15 | 가부시키가이샤 리코 | 전계 효과형 트랜지스터, 그 제조 방법, 표시 소자, 표시 디바이스 및 시스템 |
CN108666271B (zh) * | 2017-03-29 | 2020-10-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
US10002791B1 (en) | 2017-04-06 | 2018-06-19 | International Business Machines Corporation | Multi-layer work function metal gates with similar gate thickness to achieve multi-Vt for vFETS |
US11114347B2 (en) * | 2017-06-30 | 2021-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self-protective layer formed on high-k dielectric layers with different materials |
US10720516B2 (en) * | 2017-06-30 | 2020-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gate stack structure and method for forming the same |
KR102341721B1 (ko) * | 2017-09-08 | 2021-12-23 | 삼성전자주식회사 | 반도체 소자 |
KR102271008B1 (ko) | 2017-10-27 | 2021-06-29 | 삼성전자주식회사 | 반도체 장치 |
US11282933B2 (en) * | 2017-11-30 | 2022-03-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | FinFET having a work function material gradient |
CN109994472B (zh) * | 2018-01-03 | 2021-12-28 | 联华电子股份有限公司 | 半导体元件与其制作方法 |
US10388577B1 (en) | 2018-03-28 | 2019-08-20 | International Business Machines Corporation | Nanosheet devices with different types of work function metals |
KR102574322B1 (ko) | 2018-06-27 | 2023-09-05 | 삼성전자주식회사 | 반도체 장치 |
CN110649091B (zh) * | 2018-06-27 | 2024-02-27 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法和电子装置 |
US10879392B2 (en) * | 2018-07-05 | 2020-12-29 | Samsung Electronics Co., Ltd. | Semiconductor device |
US11189662B2 (en) | 2018-08-13 | 2021-11-30 | Micron Technology | Memory cell stack and via formation for a memory device |
US10991425B2 (en) * | 2018-08-13 | 2021-04-27 | Micron Technology, Inc. | Access line grain modulation in a memory device |
US10879393B2 (en) * | 2018-08-14 | 2020-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods of fabricating semiconductor devices having gate structure with bent sidewalls |
US10573723B1 (en) * | 2018-08-23 | 2020-02-25 | International Business Machines Corporation | Vertical transport FETs with asymmetric channel profiles using dipole layers |
US10867864B2 (en) * | 2018-09-27 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacture |
US11094598B2 (en) | 2019-07-11 | 2021-08-17 | Globalfoundries U.S. Inc. | Multiple threshold voltage devices |
US11380793B2 (en) * | 2019-07-31 | 2022-07-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin field-effect transistor device having hybrid work function layer stack |
US11056395B2 (en) * | 2019-08-23 | 2021-07-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor metal gate and method of manufacture |
US11362002B2 (en) * | 2020-01-28 | 2022-06-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Adjusting work function through adjusting deposition temperature |
US11664279B2 (en) * | 2020-02-19 | 2023-05-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple threshold voltage implementation through lanthanum incorporation |
US11430950B2 (en) | 2020-03-27 | 2022-08-30 | Micron Technology, Inc. | Low resistance via contacts in a memory device |
US11475942B2 (en) | 2020-06-18 | 2022-10-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | SRAM structures |
US20220093757A1 (en) * | 2020-09-22 | 2022-03-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Middle-of-line interconnect structure and manufacturing method |
US11594610B2 (en) * | 2020-10-15 | 2023-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method |
US20230377879A1 (en) * | 2022-05-18 | 2023-11-23 | Applied Materials, Inc. | Barrier layer for preventing aluminum diffusion |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7332433B2 (en) | 2005-09-22 | 2008-02-19 | Sematech Inc. | Methods of modulating the work functions of film layers |
US7799669B2 (en) * | 2007-04-27 | 2010-09-21 | Texas Instruments Incorporated | Method of forming a high-k gate dielectric layer |
US7858459B2 (en) * | 2007-04-20 | 2010-12-28 | Texas Instruments Incorporated | Work function adjustment with the implant of lanthanides |
US20090039441A1 (en) | 2007-08-10 | 2009-02-12 | Hongfa Luna | Mosfet with metal gate electrode |
US20090108294A1 (en) | 2007-10-30 | 2009-04-30 | International Business Machines Corporation | Scalable high-k dielectric gate stack |
US8236686B2 (en) | 2008-05-30 | 2012-08-07 | International Business Machines Corporation | Dual metal gates using one metal to alter work function of another metal |
CN102110650A (zh) * | 2009-12-29 | 2011-06-29 | 中国科学院微电子研究所 | 一种半导体器件及其制造方法 |
US8592296B2 (en) | 2010-06-16 | 2013-11-26 | International Business Machines Corporation | Gate-last fabrication of quarter-gap MGHK FET |
US8716118B2 (en) * | 2012-01-06 | 2014-05-06 | International Business Machines Corporation | Replacement gate structure for transistor with a high-K gate stack |
US9431509B2 (en) * | 2012-12-31 | 2016-08-30 | Texas Instruments Incorporated | High-K metal gate |
-
2013
- 2013-11-01 US US14/069,782 patent/US9012319B1/en active Active
-
2014
- 2014-08-05 SG SG10201404645QA patent/SG10201404645QA/en unknown
- 2014-08-21 TW TW103128750A patent/TWI536544B/zh not_active IP Right Cessation
- 2014-10-24 KR KR1020140145486A patent/KR20150051147A/ko not_active Application Discontinuation
- 2014-10-31 DE DE102014222289.3A patent/DE102014222289B4/de active Active
- 2014-10-31 CN CN201410602674.9A patent/CN104616994A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
DE102014222289A1 (de) | 2015-05-07 |
TW201519410A (zh) | 2015-05-16 |
US20150126023A1 (en) | 2015-05-07 |
TWI536544B (zh) | 2016-06-01 |
US9012319B1 (en) | 2015-04-21 |
DE102014222289B4 (de) | 2021-01-21 |
KR20150051147A (ko) | 2015-05-11 |
CN104616994A (zh) | 2015-05-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201404645QA (en) | Methods of forming gate structures with multiple work functions and the resulting products | |
EP2969323A4 (en) | GAINED ARTICLES AND METHODS OF MANUFACTURING THE SAME | |
ZA201603494B (en) | Flexible containers and methods of forming the same | |
GB201317889D0 (en) | Product and use | |
EP2961382A4 (en) | TOPICAL COMPOSITIONS AND METHODS OF USE | |
EP2990497A4 (en) | PURIFIED STEEL WITH LOW OXYGEN CONTENT AND PURIFIED STEEL PRODUCT WITH LOW OXYGEN CONTENT | |
EP2986452A4 (en) | DISPERSIBLE ARTICLES AND METHODS OF MANUFACTURING THE SAME | |
HK1206094A1 (zh) | 冰箱門以及具備該冰箱門的冰箱 | |
GB201301626D0 (en) | Composition comprising 15-OHEPA and methods of using the same | |
SG11201604763PA (en) | Multilayered nanoparticle and methods of manufacturing and using the same | |
IL240248A0 (en) | Met-binding substances and their uses | |
EP2988742A4 (en) | THIAZOLES AND USES THEREOF | |
SI3084096T1 (sl) | Plošča iz umetne snovi in strukture, ki jo uporabljajo | |
EP3041891A4 (en) | Materials and methods | |
GB201323132D0 (en) | New products and processes | |
PL3089850T3 (pl) | Elementy kompozytowe i sposoby ich formowania | |
EP2991949A4 (en) | Polysilocarb materials and methods | |
GB201320992D0 (en) | Complex and uses thereof | |
GB201309180D0 (en) | Compounds and Their Uses | |
HK1219516A1 (zh) | 層及其製造 | |
EP3068874A4 (en) | Fibroblast mixtures and methods of making and using the same | |
LT2805724T (lt) | Magnio oksido hidratą turintys produktai ir jų panaudojimas | |
GB201314610D0 (en) | Compounds and their uses | |
GB2518459B (en) | Bathing aid and bathing assembly using the same | |
GB201306248D0 (en) | Compounds and their uses |