SE9903213D0 - Dry etching process of compound semiconductor materials - Google Patents

Dry etching process of compound semiconductor materials

Info

Publication number
SE9903213D0
SE9903213D0 SE9903213A SE9903213A SE9903213D0 SE 9903213 D0 SE9903213 D0 SE 9903213D0 SE 9903213 A SE9903213 A SE 9903213A SE 9903213 A SE9903213 A SE 9903213A SE 9903213 D0 SE9903213 D0 SE 9903213D0
Authority
SE
Sweden
Prior art keywords
methyl
substrate
plasma
etching
radicals
Prior art date
Application number
SE9903213A
Other languages
English (en)
Swedish (sv)
Inventor
Carl-Fredrik Carlstroem
Srinivasan Anand
Gunnar Landgren
Original Assignee
Carl Fredrik Carlstroem
Srinivasan Anand
Gunnar Landgren
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SE9902344A external-priority patent/SE9902344D0/xx
Application filed by Carl Fredrik Carlstroem, Srinivasan Anand, Gunnar Landgren filed Critical Carl Fredrik Carlstroem
Priority to SE9903213A priority Critical patent/SE9903213D0/xx
Publication of SE9903213D0 publication Critical patent/SE9903213D0/xx
Priority to KR1020017016014A priority patent/KR100731849B1/ko
Priority to US10/018,809 priority patent/US6933242B1/en
Priority to DE60043300T priority patent/DE60043300D1/de
Priority to PCT/GB2000/002255 priority patent/WO2000079578A1/en
Priority to EP00940508A priority patent/EP1188180B1/en
Priority to JP2001505049A priority patent/JP4979167B2/ja
Priority to AT00940508T priority patent/ATE448566T1/de

Links

Classifications

    • H10P50/246—
    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
SE9903213A 1999-06-21 1999-09-10 Dry etching process of compound semiconductor materials SE9903213D0 (sv)

Priority Applications (8)

Application Number Priority Date Filing Date Title
SE9903213A SE9903213D0 (sv) 1999-06-21 1999-09-10 Dry etching process of compound semiconductor materials
KR1020017016014A KR100731849B1 (ko) 1999-06-21 2000-06-21 플라즈마를 이용한 기질 에칭 방법
US10/018,809 US6933242B1 (en) 1999-06-21 2000-06-21 Plasma etching
DE60043300T DE60043300D1 (enExample) 1999-06-21 2000-06-21
PCT/GB2000/002255 WO2000079578A1 (en) 1999-06-21 2000-06-21 Improvements relating to plasma etching
EP00940508A EP1188180B1 (en) 1999-06-21 2000-06-21 Improvements relating to plasma etching
JP2001505049A JP4979167B2 (ja) 1999-06-21 2000-06-21 プラズマエッチング方法
AT00940508T ATE448566T1 (de) 1999-06-21 2000-06-21 Verbesserungen von verfahren zum plasmaätzen

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9902344A SE9902344D0 (sv) 1999-06-21 1999-06-21 Dry etching process of III-V-semiconductor
SE9903213A SE9903213D0 (sv) 1999-06-21 1999-09-10 Dry etching process of compound semiconductor materials

Publications (1)

Publication Number Publication Date
SE9903213D0 true SE9903213D0 (sv) 1999-09-10

Family

ID=26663600

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9903213A SE9903213D0 (sv) 1999-06-21 1999-09-10 Dry etching process of compound semiconductor materials

Country Status (8)

Country Link
US (1) US6933242B1 (enExample)
EP (1) EP1188180B1 (enExample)
JP (1) JP4979167B2 (enExample)
KR (1) KR100731849B1 (enExample)
AT (1) ATE448566T1 (enExample)
DE (1) DE60043300D1 (enExample)
SE (1) SE9903213D0 (enExample)
WO (1) WO2000079578A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
KR100759808B1 (ko) 2005-12-08 2007-09-20 한국전자통신연구원 Ｉｉｉ－ｖ 족 반도체 다층구조의 식각 방법 및 이를이용한 수직공진형 표면방출 레이저 제조 방법
US20080239428A1 (en) * 2007-04-02 2008-10-02 Inphase Technologies, Inc. Non-ft plane angular filters
JP5723377B2 (ja) * 2009-11-09 2015-05-27 スリーエム イノベイティブ プロパティズ カンパニー 半導体のためのエッチングプロセス
KR102306979B1 (ko) 2014-04-01 2021-09-30 에베 그룹 에. 탈너 게엠베하 기질의 표면 처리를 위한 방법 및 장치
JP2017022368A (ja) * 2015-06-05 2017-01-26 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ ＧａＮ及びその他のＩＩＩ−Ｖ材料の原子層エッチング
US10096487B2 (en) 2015-08-19 2018-10-09 Lam Research Corporation Atomic layer etching of tungsten and other metals
US9991128B2 (en) 2016-02-05 2018-06-05 Lam Research Corporation Atomic layer etching in continuous plasma
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
KR102733594B1 (ko) * 2019-12-18 2024-11-25 주식회사 원익아이피에스 기판 처리 방법
TW202247248A (zh) 2021-02-03 2022-12-01 美商蘭姆研究公司 原子層蝕刻中的蝕刻選擇性控制

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07201820A (ja) * 1993-12-28 1995-08-04 Fujitsu Ltd 水銀カドミウムテルル基板のエッチング方法
US5527425A (en) * 1995-07-21 1996-06-18 At&T Corp. Method of making in-containing III/V semiconductor devices
JPH10303181A (ja) * 1997-04-28 1998-11-13 Mitsui Chem Inc 乾式プロセスガス
JPH1116896A (ja) * 1997-06-27 1999-01-22 Fujitsu Ltd 化合物半導体装置の製造方法

Also Published As

Publication number Publication date
EP1188180B1 (en) 2009-11-11
KR20020041333A (ko) 2002-06-01
ATE448566T1 (de) 2009-11-15
KR100731849B1 (ko) 2007-06-25
EP1188180A1 (en) 2002-03-20
JP4979167B2 (ja) 2012-07-18
DE60043300D1 (enExample) 2009-12-24
JP2003502860A (ja) 2003-01-21
US6933242B1 (en) 2005-08-23
WO2000079578A1 (en) 2000-12-28

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