KR100731849B1 - 플라즈마를 이용한 기질 에칭 방법 - Google Patents

플라즈마를 이용한 기질 에칭 방법 Download PDF

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Publication number
KR100731849B1
KR100731849B1 KR1020017016014A KR20017016014A KR100731849B1 KR 100731849 B1 KR100731849 B1 KR 100731849B1 KR 1020017016014 A KR1020017016014 A KR 1020017016014A KR 20017016014 A KR20017016014 A KR 20017016014A KR 100731849 B1 KR100731849 B1 KR 100731849B1
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South Korea
Prior art keywords
etching
plasma
substrate
gas
etching gas
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020017016014A
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English (en)
Korean (ko)
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KR20020041333A (ko
Inventor
아난드 스리니바산
칼-프레드릭 칼스트롬
거나 란드그렌
Original Assignee
서페이스 테크놀로지 시스템스 피엘씨
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Publication date
Priority claimed from SE9902344A external-priority patent/SE9902344D0/xx
Application filed by 서페이스 테크놀로지 시스템스 피엘씨 filed Critical 서페이스 테크놀로지 시스템스 피엘씨
Publication of KR20020041333A publication Critical patent/KR20020041333A/ko
Application granted granted Critical
Publication of KR100731849B1 publication Critical patent/KR100731849B1/ko
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    • H10P50/246—
    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
KR1020017016014A 1999-06-21 2000-06-21 플라즈마를 이용한 기질 에칭 방법 Expired - Fee Related KR100731849B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
SE9902344A SE9902344D0 (sv) 1999-06-21 1999-06-21 Dry etching process of III-V-semiconductor
SE9902344-2 1999-06-21
SE9903213A SE9903213D0 (sv) 1999-06-21 1999-09-10 Dry etching process of compound semiconductor materials
SE9903213-8 1999-09-10

Publications (2)

Publication Number Publication Date
KR20020041333A KR20020041333A (ko) 2002-06-01
KR100731849B1 true KR100731849B1 (ko) 2007-06-25

Family

ID=26663600

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017016014A Expired - Fee Related KR100731849B1 (ko) 1999-06-21 2000-06-21 플라즈마를 이용한 기질 에칭 방법

Country Status (8)

Country Link
US (1) US6933242B1 (enExample)
EP (1) EP1188180B1 (enExample)
JP (1) JP4979167B2 (enExample)
KR (1) KR100731849B1 (enExample)
AT (1) ATE448566T1 (enExample)
DE (1) DE60043300D1 (enExample)
SE (1) SE9903213D0 (enExample)
WO (1) WO2000079578A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210007039A (ko) * 2014-04-01 2021-01-19 에베 그룹 에. 탈너 게엠베하 기질의 표면 처리를 위한 방법 및 장치

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
KR100759808B1 (ko) 2005-12-08 2007-09-20 한국전자통신연구원 Ｉｉｉ－ｖ 족 반도체 다층구조의 식각 방법 및 이를이용한 수직공진형 표면방출 레이저 제조 방법
US20080239428A1 (en) * 2007-04-02 2008-10-02 Inphase Technologies, Inc. Non-ft plane angular filters
JP5723377B2 (ja) * 2009-11-09 2015-05-27 スリーエム イノベイティブ プロパティズ カンパニー 半導体のためのエッチングプロセス
JP2017022368A (ja) * 2015-06-05 2017-01-26 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ ＧａＮ及びその他のＩＩＩ−Ｖ材料の原子層エッチング
US10096487B2 (en) 2015-08-19 2018-10-09 Lam Research Corporation Atomic layer etching of tungsten and other metals
US9991128B2 (en) 2016-02-05 2018-06-05 Lam Research Corporation Atomic layer etching in continuous plasma
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
KR102733594B1 (ko) * 2019-12-18 2024-11-25 주식회사 원익아이피에스 기판 처리 방법
TW202247248A (zh) 2021-02-03 2022-12-01 美商蘭姆研究公司 原子層蝕刻中的蝕刻選擇性控制

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5534109A (en) * 1993-12-28 1996-07-09 Fujitsu Limited Method for etching HgCdTe substrate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5527425A (en) * 1995-07-21 1996-06-18 At&T Corp. Method of making in-containing III/V semiconductor devices
JPH10303181A (ja) * 1997-04-28 1998-11-13 Mitsui Chem Inc 乾式プロセスガス
JPH1116896A (ja) * 1997-06-27 1999-01-22 Fujitsu Ltd 化合物半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5534109A (en) * 1993-12-28 1996-07-09 Fujitsu Limited Method for etching HgCdTe substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210007039A (ko) * 2014-04-01 2021-01-19 에베 그룹 에. 탈너 게엠베하 기질의 표면 처리를 위한 방법 및 장치
KR102306979B1 (ko) * 2014-04-01 2021-09-30 에베 그룹 에. 탈너 게엠베하 기질의 표면 처리를 위한 방법 및 장치
US11901172B2 (en) 2014-04-01 2024-02-13 Ev Group E. Thallner Gmbh Method and device for the surface treatment of substrates

Also Published As

Publication number Publication date
EP1188180B1 (en) 2009-11-11
KR20020041333A (ko) 2002-06-01
ATE448566T1 (de) 2009-11-15
SE9903213D0 (sv) 1999-09-10
EP1188180A1 (en) 2002-03-20
JP4979167B2 (ja) 2012-07-18
DE60043300D1 (enExample) 2009-12-24
JP2003502860A (ja) 2003-01-21
US6933242B1 (en) 2005-08-23
WO2000079578A1 (en) 2000-12-28

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