SE9902005D0 - Collector-up RF power transistor - Google Patents

Collector-up RF power transistor

Info

Publication number
SE9902005D0
SE9902005D0 SE9902005A SE9902005A SE9902005D0 SE 9902005 D0 SE9902005 D0 SE 9902005D0 SE 9902005 A SE9902005 A SE 9902005A SE 9902005 A SE9902005 A SE 9902005A SE 9902005 D0 SE9902005 D0 SE 9902005D0
Authority
SE
Sweden
Prior art keywords
collector
emitter
silicon
transistor
substrate
Prior art date
Application number
SE9902005A
Other languages
English (en)
Other versions
SE516338C2 (sv
SE9902005L (sv
Inventor
Ted Johansson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9902005A priority Critical patent/SE516338C2/sv
Publication of SE9902005D0 publication Critical patent/SE9902005D0/sv
Priority to TW088109812A priority patent/TW448580B/zh
Priority to JP2001500329A priority patent/JP2003501802A/ja
Priority to CNB008082537A priority patent/CN1149648C/zh
Priority to PCT/SE2000/001002 priority patent/WO2000074129A1/en
Priority to CA002373580A priority patent/CA2373580A1/en
Priority to EP00937430A priority patent/EP1192651A1/en
Priority to AU52604/00A priority patent/AU5260400A/en
Priority to KR10-2001-7014855A priority patent/KR100434659B1/ko
Priority to US09/583,648 priority patent/US6329259B1/en
Publication of SE9902005L publication Critical patent/SE9902005L/sv
Publication of SE516338C2 publication Critical patent/SE516338C2/sv
Priority to HK02107412.3A priority patent/HK1045910A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
SE9902005A 1999-05-31 1999-05-31 RF-effekttransistor med kollektor upp SE516338C2 (sv)

Priority Applications (11)

Application Number Priority Date Filing Date Title
SE9902005A SE516338C2 (sv) 1999-05-31 1999-05-31 RF-effekttransistor med kollektor upp
TW088109812A TW448580B (en) 1999-05-31 1999-06-11 Collector-up RF power transistor
KR10-2001-7014855A KR100434659B1 (ko) 1999-05-31 2000-05-19 콜렉터-업 ｒｆ 전력 트랜지스터
PCT/SE2000/001002 WO2000074129A1 (en) 1999-05-31 2000-05-19 Collector-up rf power transistor
CNB008082537A CN1149648C (zh) 1999-05-31 2000-05-19 集电极朝上的射频功率晶体管及其制造方法
JP2001500329A JP2003501802A (ja) 1999-05-31 2000-05-19 コレクタ高位ｒｆパワートランジスタ
CA002373580A CA2373580A1 (en) 1999-05-31 2000-05-19 Collector-up rf power transistor
EP00937430A EP1192651A1 (en) 1999-05-31 2000-05-19 Collector-up rf power transistor
AU52604/00A AU5260400A (en) 1999-05-31 2000-05-19 Collector-up rf power transistor
US09/583,648 US6329259B1 (en) 1999-05-31 2000-05-30 Collector-up RF power transistor
HK02107412.3A HK1045910A1 (zh) 1999-05-31 2002-10-10 集電極朝上的射頻功率晶體管

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9902005A SE516338C2 (sv) 1999-05-31 1999-05-31 RF-effekttransistor med kollektor upp

Publications (3)

Publication Number Publication Date
SE9902005D0 true SE9902005D0 (sv) 1999-05-31
SE9902005L SE9902005L (sv) 2000-12-01
SE516338C2 SE516338C2 (sv) 2001-12-17

Family

ID=20415834

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9902005A SE516338C2 (sv) 1999-05-31 1999-05-31 RF-effekttransistor med kollektor upp

Country Status (11)

Country Link
US (1) US6329259B1 (sv)
EP (1) EP1192651A1 (sv)
JP (1) JP2003501802A (sv)
KR (1) KR100434659B1 (sv)
CN (1) CN1149648C (sv)
AU (1) AU5260400A (sv)
CA (1) CA2373580A1 (sv)
HK (1) HK1045910A1 (sv)
SE (1) SE516338C2 (sv)
TW (1) TW448580B (sv)
WO (1) WO2000074129A1 (sv)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6329675B2 (en) * 1999-08-06 2001-12-11 Cree, Inc. Self-aligned bipolar junction silicon carbide transistors
JP5178988B2 (ja) * 2000-12-11 2013-04-10 クリー インコーポレイテッド 炭化ケイ素中の自己整合バイポーラ接合トランジスタの製造方法およびそれにより作製されるデバイス
US6699765B1 (en) 2002-08-29 2004-03-02 Micrel, Inc. Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer
JP4258205B2 (ja) * 2002-11-11 2009-04-30 パナソニック株式会社 半導体装置
JP4949650B2 (ja) * 2005-07-13 2012-06-13 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
CN101162730B (zh) * 2007-11-13 2010-04-07 清华大学 多晶收集区倒置结构SiGe异质结晶体管
US7932541B2 (en) * 2008-01-14 2011-04-26 International Business Machines Corporation High performance collector-up bipolar transistor
JP2019075424A (ja) * 2017-10-13 2019-05-16 株式会社村田製作所 ヘテロ接合バイポーラトランジスタ

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8708926D0 (en) * 1987-04-14 1987-05-20 British Telecomm Bipolar transistor
US5198689A (en) * 1988-11-30 1993-03-30 Fujitsu Limited Heterojunction bipolar transistor
JP3011729B2 (ja) * 1990-01-16 2000-02-21 沖電気工業株式会社 バイポーラ型半導体集積回路装置の製造方法
JPH0785476B2 (ja) * 1991-06-14 1995-09-13 インターナショナル・ビジネス・マシーンズ・コーポレイション エミッタ埋め込み型バイポーラ・トランジスタ構造
EP0550962A3 (en) * 1992-01-08 1993-09-29 American Telephone And Telegraph Company Heterojunction bipolar transistor
JP3084541B2 (ja) * 1992-09-18 2000-09-04 シャープ株式会社 縦型構造トランジスタ
US5700701A (en) * 1992-10-30 1997-12-23 Texas Instruments Incorporated Method for reducing junction capacitance and increasing current gain in collector-up bipolar transistors
US5798539A (en) * 1992-12-10 1998-08-25 Daimler Benz Ag Bipolar transistor for very high frequencies
MY115336A (en) 1994-02-18 2003-05-31 Ericsson Telefon Ab L M Electromigration resistant metallization structures and process for microcircuit interconnections with rf-reactively sputtered titanium tungsten and gold
US5485025A (en) * 1994-12-02 1996-01-16 Texas Instruments Incorporated Depleted extrinsic emitter of collector-up heterojunction bipolar transistor

Also Published As

Publication number Publication date
HK1045910A1 (zh) 2002-12-13
JP2003501802A (ja) 2003-01-14
CN1149648C (zh) 2004-05-12
SE516338C2 (sv) 2001-12-17
KR20020032425A (ko) 2002-05-03
SE9902005L (sv) 2000-12-01
KR100434659B1 (ko) 2004-06-07
US6329259B1 (en) 2001-12-11
EP1192651A1 (en) 2002-04-03
WO2000074129A1 (en) 2000-12-07
CN1353862A (zh) 2002-06-12
TW448580B (en) 2001-08-01
CA2373580A1 (en) 2000-12-07
AU5260400A (en) 2000-12-18

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