DE60141459D1 - Halbleiterbauelement und dessen herstellungsverfahren - Google Patents

Halbleiterbauelement und dessen herstellungsverfahren

Info

Publication number
DE60141459D1
DE60141459D1 DE60141459T DE60141459T DE60141459D1 DE 60141459 D1 DE60141459 D1 DE 60141459D1 DE 60141459 T DE60141459 T DE 60141459T DE 60141459 T DE60141459 T DE 60141459T DE 60141459 D1 DE60141459 D1 DE 60141459D1
Authority
DE
Germany
Prior art keywords
region
collector
semiconductor
transistor
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60141459T
Other languages
English (en)
Inventor
Ronald Dekker
Henricus G Maas
Jan W Slotboom
Rijs Freerk Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE60141459D1 publication Critical patent/DE60141459D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
DE60141459T 2000-03-30 2001-03-20 Halbleiterbauelement und dessen herstellungsverfahren Expired - Lifetime DE60141459D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP00201141 2000-03-30
PCT/EP2001/003132 WO2001075974A1 (en) 2000-03-30 2001-03-20 Semiconductor device and method of manufacturing same

Publications (1)

Publication Number Publication Date
DE60141459D1 true DE60141459D1 (de) 2010-04-15

Family

ID=8171271

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60141459T Expired - Lifetime DE60141459D1 (de) 2000-03-30 2001-03-20 Halbleiterbauelement und dessen herstellungsverfahren

Country Status (6)

Country Link
US (1) US6593628B2 (de)
EP (1) EP1273042B1 (de)
JP (1) JP2003529937A (de)
AT (1) ATE459981T1 (de)
DE (1) DE60141459D1 (de)
WO (1) WO2001075974A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4362682B2 (ja) * 2002-09-02 2009-11-11 富士ゼロックス株式会社 面発光型半導体レーザおよびその製造方法ならびにその製造装置
DE10250204B8 (de) * 2002-10-28 2008-09-11 Infineon Technologies Ag Verfahren zur Herstellung von Kollektorbereichen einer Transistorstruktur
EP1443554A1 (de) * 2003-01-27 2004-08-04 STMicroelectronics S.r.l. Gehäuse für Halbleitervorrichtungen
DE102004038699A1 (de) * 2004-08-10 2006-02-23 Atmel Germany Gmbh Kaskode, Kaskodenschaltung und Verfahren zur vertikalen Integration von zwei Bipolartransistoren zu einer Kaskodenanordnung
DE102004055183B3 (de) * 2004-11-16 2006-07-13 Atmel Germany Gmbh Integrierte Schaltung und Verfahren zur Herstellung einer integrierten Schaltung auf einem Halbleiterplättchen
DE102004055213B4 (de) * 2004-11-16 2009-04-09 Atmel Germany Gmbh Verfahren zur Herstellung einer integrierten Schaltung auf einem Halbleiterplättchen
KR100574498B1 (ko) * 2004-12-28 2006-04-27 주식회사 하이닉스반도체 반도체 장치의 초기화 회로
US8212291B2 (en) * 2008-03-12 2012-07-03 Georgia Tech Research Corporation Inverse mode SiGe HBT cascode device and fabrication method
US8710665B2 (en) * 2008-10-06 2014-04-29 Infineon Technologies Ag Electronic component, a semiconductor wafer and a method for producing an electronic component
DE102009032486A1 (de) * 2009-07-09 2011-01-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102010027679A1 (de) 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US8890247B2 (en) * 2012-10-15 2014-11-18 International Business Machines Corporation Extremely thin semiconductor-on-insulator with back gate contact
JP5907480B2 (ja) 2013-07-31 2016-04-26 株式会社村田製作所 バイポーラトランジスタ及び半導体装置並びにバイポーラトランジスタの製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3566218A (en) * 1968-10-02 1971-02-23 Nat Semiconductor Corp The Multiple base width integrated circuit
JPS6020559A (ja) * 1983-07-15 1985-02-01 Hitachi Ltd 複合半導体装置
JPS63313860A (ja) * 1987-06-17 1988-12-21 Seiko Epson Corp 半導体装置
JPH0263155A (ja) * 1988-08-29 1990-03-02 Mitsubishi Electric Corp 半導体集積回路装置
JPH0817179B2 (ja) * 1989-03-14 1996-02-21 株式会社東芝 半導体装置およびその製造方法
DE69315813T2 (de) 1992-12-28 1998-06-10 Koninkl Philips Electronics Nv Kaskodenschaltungsstruktur mit bipolaren Epitoxial-Transistoren und niedrig gelegenem Basisanschluss
BE1007589A3 (nl) * 1993-10-01 1995-08-16 Philips Electronics Nv Halfgeleiderinrichting met in mesa-structuur aangebracht halfgeleiderelement.
EP1251557B1 (de) * 1994-07-26 2007-01-03 Koninklijke Philips Electronics N.V. Verfahren zur Herstellung einer Halbleitervorrichtunng und eine Halbleitervorrichtung
WO1997017726A1 (en) * 1995-11-07 1997-05-15 National Semiconductor Corporation Low collector resistance bipolar transistor compatible with high voltage integrated circuits
JP3709668B2 (ja) * 1997-09-02 2005-10-26 ソニー株式会社 半導体装置とその製造方法
JP3164076B2 (ja) * 1998-08-28 2001-05-08 日本電気株式会社 半導体装置の製造方法
US6221706B1 (en) * 1999-03-17 2001-04-24 Advanced Micro Devices, Inc. Aluminum disposable spacer to reduce mask count in CMOS transistor formation
US6171911B1 (en) * 1999-09-13 2001-01-09 Taiwan Semiconductor Manufacturing Company Method for forming dual gate oxides on integrated circuits with advanced logic devices

Also Published As

Publication number Publication date
WO2001075974A1 (en) 2001-10-11
EP1273042A1 (de) 2003-01-08
EP1273042B1 (de) 2010-03-03
US20010045619A1 (en) 2001-11-29
JP2003529937A (ja) 2003-10-07
ATE459981T1 (de) 2010-03-15
US6593628B2 (en) 2003-07-15

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