SE9701934D0 - Integrerad krets, komponenter däri, samt framställningsförfarande - Google Patents

Integrerad krets, komponenter däri, samt framställningsförfarande

Info

Publication number
SE9701934D0
SE9701934D0 SE9701934A SE9701934A SE9701934D0 SE 9701934 D0 SE9701934 D0 SE 9701934D0 SE 9701934 A SE9701934 A SE 9701934A SE 9701934 A SE9701934 A SE 9701934A SE 9701934 D0 SE9701934 D0 SE 9701934D0
Authority
SE
Sweden
Prior art keywords
trench
semiconductor structure
over
layer
depth
Prior art date
Application number
SE9701934A
Other languages
English (en)
Other versions
SE9701934L (sv
SE512813C2 (sv
Inventor
Hans Erik Norstroem
Sam-Hyo Hong
Bo Anders Lindgren
Torbjoern Larsson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9701934A priority Critical patent/SE512813C2/sv
Publication of SE9701934D0 publication Critical patent/SE9701934D0/sv
Priority to TW086109915A priority patent/TW344885B/zh
Priority to CA002291114A priority patent/CA2291114A1/en
Priority to CN98807562A priority patent/CN1265225A/zh
Priority to AU76804/98A priority patent/AU7680498A/en
Priority to PCT/SE1998/000929 priority patent/WO1998053489A2/en
Priority to KR10-1999-7010873A priority patent/KR100537419B1/ko
Priority to JP55029198A priority patent/JP2001525998A/ja
Priority to EP98924701A priority patent/EP0985225A2/en
Priority to US09/083,100 priority patent/US6251739B1/en
Publication of SE9701934L publication Critical patent/SE9701934L/sv
Priority to US09/224,711 priority patent/US6504232B2/en
Publication of SE512813C2 publication Critical patent/SE512813C2/sv
Priority to US09/853,632 priority patent/US6406972B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Element Separation (AREA)
SE9701934A 1997-05-23 1997-05-23 Förfarande för framställning av en integrerad krets innefattande en dislokationsfri kollektorplugg förbunden med en begravd kollektor i en halvledarkomponent, som är omgiven av en dislokationsfri trench samt integrerad krets framställd enligt förfarandet SE512813C2 (sv)

Priority Applications (12)

Application Number Priority Date Filing Date Title
SE9701934A SE512813C2 (sv) 1997-05-23 1997-05-23 Förfarande för framställning av en integrerad krets innefattande en dislokationsfri kollektorplugg förbunden med en begravd kollektor i en halvledarkomponent, som är omgiven av en dislokationsfri trench samt integrerad krets framställd enligt förfarandet
TW086109915A TW344885B (en) 1997-05-23 1997-07-14 Integrated circuit, components thereof and manufacturing method
EP98924701A EP0985225A2 (en) 1997-05-23 1998-05-18 Integrated circuit, components thereof and manufacturing method
KR10-1999-7010873A KR100537419B1 (ko) 1997-05-23 1998-05-18 집적 회로, 이의 소자 및 제조 방법
CN98807562A CN1265225A (zh) 1997-05-23 1998-05-18 集成电路及其元件与制造方法
AU76804/98A AU7680498A (en) 1997-05-23 1998-05-18 Integrated circuit, components thereof and manufacturing method
PCT/SE1998/000929 WO1998053489A2 (en) 1997-05-23 1998-05-18 Integrated circuit, components thereof and manufacturing method
CA002291114A CA2291114A1 (en) 1997-05-23 1998-05-18 Integrated circuit, components thereof and manufacturing method
JP55029198A JP2001525998A (ja) 1997-05-23 1998-05-18 集積回路とその素子と製造方法
US09/083,100 US6251739B1 (en) 1997-05-23 1998-05-22 Integrated circuit, components thereof and manufacturing method
US09/224,711 US6504232B2 (en) 1997-05-23 1998-12-31 Integrated circuit components thereof and manufacturing method
US09/853,632 US6406972B2 (en) 1997-05-23 2001-05-14 Integrated circuit, components thereof and manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9701934A SE512813C2 (sv) 1997-05-23 1997-05-23 Förfarande för framställning av en integrerad krets innefattande en dislokationsfri kollektorplugg förbunden med en begravd kollektor i en halvledarkomponent, som är omgiven av en dislokationsfri trench samt integrerad krets framställd enligt förfarandet

Publications (3)

Publication Number Publication Date
SE9701934D0 true SE9701934D0 (sv) 1997-05-23
SE9701934L SE9701934L (sv) 1998-11-24
SE512813C2 SE512813C2 (sv) 2000-05-15

Family

ID=20407058

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9701934A SE512813C2 (sv) 1997-05-23 1997-05-23 Förfarande för framställning av en integrerad krets innefattande en dislokationsfri kollektorplugg förbunden med en begravd kollektor i en halvledarkomponent, som är omgiven av en dislokationsfri trench samt integrerad krets framställd enligt förfarandet

Country Status (10)

Country Link
US (3) US6251739B1 (sv)
EP (1) EP0985225A2 (sv)
JP (1) JP2001525998A (sv)
KR (1) KR100537419B1 (sv)
CN (1) CN1265225A (sv)
AU (1) AU7680498A (sv)
CA (1) CA2291114A1 (sv)
SE (1) SE512813C2 (sv)
TW (1) TW344885B (sv)
WO (1) WO1998053489A2 (sv)

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JP2001525998A (ja) 2001-12-11
SE9701934L (sv) 1998-11-24
US6406972B2 (en) 2002-06-18
US20020132439A1 (en) 2002-09-19
KR20010012906A (ko) 2001-02-26
SE512813C2 (sv) 2000-05-15
TW344885B (en) 1998-11-11
WO1998053489A2 (en) 1998-11-26
CN1265225A (zh) 2000-08-30
KR100537419B1 (ko) 2005-12-19
US6251739B1 (en) 2001-06-26
US20010021559A1 (en) 2001-09-13
AU7680498A (en) 1998-12-11
US6504232B2 (en) 2003-01-07
EP0985225A2 (en) 2000-03-15
WO1998053489A3 (en) 1999-03-11
CA2291114A1 (en) 1998-11-26

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