SE9600898L - Semiconductors including inclined base emitter and collector base transitions and method for producing such - Google Patents

Semiconductors including inclined base emitter and collector base transitions and method for producing such

Info

Publication number
SE9600898L
SE9600898L SE9600898A SE9600898A SE9600898L SE 9600898 L SE9600898 L SE 9600898L SE 9600898 A SE9600898 A SE 9600898A SE 9600898 A SE9600898 A SE 9600898A SE 9600898 L SE9600898 L SE 9600898L
Authority
SE
Sweden
Prior art keywords
base
collector
emitter
insulator
region
Prior art date
Application number
SE9600898A
Other languages
Swedish (sv)
Other versions
SE9600898D0 (en
SE506510C2 (en
Inventor
Andrej Litwin
Torkel Arnborg
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9600898A priority Critical patent/SE506510C2/en
Publication of SE9600898D0 publication Critical patent/SE9600898D0/en
Priority to EP97908624A priority patent/EP0963610A1/en
Priority to CN97192844A priority patent/CN1212787A/en
Priority to PCT/SE1997/000377 priority patent/WO1997033319A1/en
Priority to AU20493/97A priority patent/AU2049397A/en
Priority to CA002243998A priority patent/CA2243998A1/en
Priority to JP9531710A priority patent/JP2000506311A/en
Priority to KR1019980706992A priority patent/KR19990087554A/en
Publication of SE9600898L publication Critical patent/SE9600898L/en
Publication of SE506510C2 publication Critical patent/SE506510C2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66265—Thin film bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7317—Bipolar thin film transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

In a bipolar semiconductor-on-insulator transistor device (1) comprising an emitter region (4), a base region (5), a collector region (2) and a collector contacting region (6) in a semiconductor wafer, e.g. a monocrystalline silicon wafer (2), on top of an insulator (3), the base-emitter and collector-base junctions are tilted relative to the interface between the semiconductor wafer (2) and the insulator (3). The device can be made by anisotropic etching in order to produce a tilted surface (7) at an edge of the device or equivalently a V-groove having tilted sidewalls. The base and emitter regions (5, 4) are then produced by diffusing suitable donor and acceptor atoms into the material inside the tilted surface. Such a bipolar semiconductor-on-insulator transistor combines the high speed features of a lateral semiconductor device and the high voltage features of a vertical semiconductor device.
SE9600898A 1996-03-07 1996-03-07 Semiconductors including inclined base emitter and collector base transitions and method for producing such SE506510C2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
SE9600898A SE506510C2 (en) 1996-03-07 1996-03-07 Semiconductors including inclined base emitter and collector base transitions and method for producing such
EP97908624A EP0963610A1 (en) 1996-03-07 1997-03-05 Bipolar soi device having a tilted pn-junction, and a method for producing such a device
CN97192844A CN1212787A (en) 1996-03-07 1997-03-05 Bipolar SOI device having tilted PN-junction, and method for producing such device
PCT/SE1997/000377 WO1997033319A1 (en) 1996-03-07 1997-03-05 Bipolar soi device having a tilted pn-junction, and a method for producing such a device
AU20493/97A AU2049397A (en) 1996-03-07 1997-03-05 Bipolar soi device having a tilted pn-junction, and a method for producing such a device
CA002243998A CA2243998A1 (en) 1996-03-07 1997-03-05 Bipolar soi device having a tilted pn-junction, and a method for producing such a device
JP9531710A JP2000506311A (en) 1996-03-07 1997-03-05 Bipolar SOI device with graded PN junction and method of manufacturing such device
KR1019980706992A KR19990087554A (en) 1996-03-07 1997-03-05 Bipolar Silicon-on-Insulator Devices and Manufacturing Method Thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9600898A SE506510C2 (en) 1996-03-07 1996-03-07 Semiconductors including inclined base emitter and collector base transitions and method for producing such

Publications (3)

Publication Number Publication Date
SE9600898D0 SE9600898D0 (en) 1996-03-07
SE9600898L true SE9600898L (en) 1997-09-08
SE506510C2 SE506510C2 (en) 1997-12-22

Family

ID=20401711

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9600898A SE506510C2 (en) 1996-03-07 1996-03-07 Semiconductors including inclined base emitter and collector base transitions and method for producing such

Country Status (8)

Country Link
EP (1) EP0963610A1 (en)
JP (1) JP2000506311A (en)
KR (1) KR19990087554A (en)
CN (1) CN1212787A (en)
AU (1) AU2049397A (en)
CA (1) CA2243998A1 (en)
SE (1) SE506510C2 (en)
WO (1) WO1997033319A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100197001B1 (en) * 1996-05-02 1999-07-01 구본준 Bipolar device and manufacturing method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1589453A1 (en) * 1966-06-28 1970-04-02 Asea Ab Semiconductor device
DE4001350C2 (en) * 1989-01-18 1993-10-07 Nissan Motor Semiconductor device

Also Published As

Publication number Publication date
JP2000506311A (en) 2000-05-23
SE9600898D0 (en) 1996-03-07
CA2243998A1 (en) 1997-09-12
WO1997033319A1 (en) 1997-09-12
EP0963610A1 (en) 1999-12-15
KR19990087554A (en) 1999-12-27
CN1212787A (en) 1999-03-31
AU2049397A (en) 1997-09-22
SE506510C2 (en) 1997-12-22

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