SE9600898L - Semiconductors including inclined base emitter and collector base transitions and method for producing such - Google Patents
Semiconductors including inclined base emitter and collector base transitions and method for producing suchInfo
- Publication number
- SE9600898L SE9600898L SE9600898A SE9600898A SE9600898L SE 9600898 L SE9600898 L SE 9600898L SE 9600898 A SE9600898 A SE 9600898A SE 9600898 A SE9600898 A SE 9600898A SE 9600898 L SE9600898 L SE 9600898L
- Authority
- SE
- Sweden
- Prior art keywords
- base
- collector
- emitter
- insulator
- region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000007704 transition Effects 0.000 title 1
- 239000012212 insulator Substances 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66265—Thin film bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7317—Bipolar thin film transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
In a bipolar semiconductor-on-insulator transistor device (1) comprising an emitter region (4), a base region (5), a collector region (2) and a collector contacting region (6) in a semiconductor wafer, e.g. a monocrystalline silicon wafer (2), on top of an insulator (3), the base-emitter and collector-base junctions are tilted relative to the interface between the semiconductor wafer (2) and the insulator (3). The device can be made by anisotropic etching in order to produce a tilted surface (7) at an edge of the device or equivalently a V-groove having tilted sidewalls. The base and emitter regions (5, 4) are then produced by diffusing suitable donor and acceptor atoms into the material inside the tilted surface. Such a bipolar semiconductor-on-insulator transistor combines the high speed features of a lateral semiconductor device and the high voltage features of a vertical semiconductor device.
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9600898A SE506510C2 (en) | 1996-03-07 | 1996-03-07 | Semiconductors including inclined base emitter and collector base transitions and method for producing such |
EP97908624A EP0963610A1 (en) | 1996-03-07 | 1997-03-05 | Bipolar soi device having a tilted pn-junction, and a method for producing such a device |
CN97192844A CN1212787A (en) | 1996-03-07 | 1997-03-05 | Bipolar SOI device having tilted PN-junction, and method for producing such device |
PCT/SE1997/000377 WO1997033319A1 (en) | 1996-03-07 | 1997-03-05 | Bipolar soi device having a tilted pn-junction, and a method for producing such a device |
AU20493/97A AU2049397A (en) | 1996-03-07 | 1997-03-05 | Bipolar soi device having a tilted pn-junction, and a method for producing such a device |
CA002243998A CA2243998A1 (en) | 1996-03-07 | 1997-03-05 | Bipolar soi device having a tilted pn-junction, and a method for producing such a device |
JP9531710A JP2000506311A (en) | 1996-03-07 | 1997-03-05 | Bipolar SOI device with graded PN junction and method of manufacturing such device |
KR1019980706992A KR19990087554A (en) | 1996-03-07 | 1997-03-05 | Bipolar Silicon-on-Insulator Devices and Manufacturing Method Thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9600898A SE506510C2 (en) | 1996-03-07 | 1996-03-07 | Semiconductors including inclined base emitter and collector base transitions and method for producing such |
Publications (3)
Publication Number | Publication Date |
---|---|
SE9600898D0 SE9600898D0 (en) | 1996-03-07 |
SE9600898L true SE9600898L (en) | 1997-09-08 |
SE506510C2 SE506510C2 (en) | 1997-12-22 |
Family
ID=20401711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9600898A SE506510C2 (en) | 1996-03-07 | 1996-03-07 | Semiconductors including inclined base emitter and collector base transitions and method for producing such |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP0963610A1 (en) |
JP (1) | JP2000506311A (en) |
KR (1) | KR19990087554A (en) |
CN (1) | CN1212787A (en) |
AU (1) | AU2049397A (en) |
CA (1) | CA2243998A1 (en) |
SE (1) | SE506510C2 (en) |
WO (1) | WO1997033319A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100197001B1 (en) * | 1996-05-02 | 1999-07-01 | 구본준 | Bipolar device and manufacturing method thereof |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1589453A1 (en) * | 1966-06-28 | 1970-04-02 | Asea Ab | Semiconductor device |
DE4001350C2 (en) * | 1989-01-18 | 1993-10-07 | Nissan Motor | Semiconductor device |
-
1996
- 1996-03-07 SE SE9600898A patent/SE506510C2/en not_active IP Right Cessation
-
1997
- 1997-03-05 EP EP97908624A patent/EP0963610A1/en not_active Withdrawn
- 1997-03-05 WO PCT/SE1997/000377 patent/WO1997033319A1/en not_active Application Discontinuation
- 1997-03-05 KR KR1019980706992A patent/KR19990087554A/en active IP Right Grant
- 1997-03-05 CN CN97192844A patent/CN1212787A/en active Pending
- 1997-03-05 JP JP9531710A patent/JP2000506311A/en active Pending
- 1997-03-05 AU AU20493/97A patent/AU2049397A/en not_active Abandoned
- 1997-03-05 CA CA002243998A patent/CA2243998A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2000506311A (en) | 2000-05-23 |
SE9600898D0 (en) | 1996-03-07 |
CA2243998A1 (en) | 1997-09-12 |
WO1997033319A1 (en) | 1997-09-12 |
EP0963610A1 (en) | 1999-12-15 |
KR19990087554A (en) | 1999-12-27 |
CN1212787A (en) | 1999-03-31 |
AU2049397A (en) | 1997-09-22 |
SE506510C2 (en) | 1997-12-22 |
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