WO1997033319A1 - Bipolar soi device having a tilted pn-junction, and a method for producing such a device - Google Patents
Bipolar soi device having a tilted pn-junction, and a method for producing such a device Download PDFInfo
- Publication number
- WO1997033319A1 WO1997033319A1 PCT/SE1997/000377 SE9700377W WO9733319A1 WO 1997033319 A1 WO1997033319 A1 WO 1997033319A1 SE 9700377 W SE9700377 W SE 9700377W WO 9733319 A1 WO9733319 A1 WO 9733319A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- base
- emitter
- region
- insulator
- tilted
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000012212 insulator Substances 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- QVRVXSZKCXFBTE-UHFFFAOYSA-N n-[4-(6,7-dimethoxy-3,4-dihydro-1h-isoquinolin-2-yl)butyl]-2-(2-fluoroethoxy)-5-methylbenzamide Chemical compound C1C=2C=C(OC)C(OC)=CC=2CCN1CCCCNC(=O)C1=CC(C)=CC=C1OCCF QVRVXSZKCXFBTE-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 2
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66265—Thin film bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7317—Bipolar thin film transistors
Definitions
- the invention relates to a bipolar semiconductor-on-insulator sdevice as well as to a method of producing such a device.
- bipolar semiconductor devices A large number of bipolar semiconductor devices be designed without heavily doped, buried layers on semiconductor substrates has been proposed.
- Isolating shallow lateral devices can be achieved more easily 25than isolating vertical devices since a simple LOCOS or mesa isolation can be utilized instead of a trench or junction isolation. However, the control of base and emitter doping is difficult, since lateral diffusion has to be utilized.
- the object of the invention is to provide a bipolar semicon ⁇ ductor-on-insulator device which combines the high speed s features of a lateral semiconductor device and the high voltage features of a vertical semiconductor device.
- This object is attained by a bipolar semiconductor-on-insulator device having base-emitter and collector-base junctions which are tilted.
- ⁇ oThis object is also attained by a method of producing a bipolar semiconductor-on-insulator device comprising that the base region and the emitter region are produced to have a tilted con ⁇ figuration.
- Fig. 1 is a schematic cross-sectional view of a bipolar semi ⁇ conductor-on-insulator device
- Figs . 2 and 3 are diagrams illustrating calculated dopant profiles at the emitter of a bipolar device according to Fig. 1,
- Fig. 4 is a diagram illustrating measured dopant profiles at the emitter of a bipolar device according to Fig. 1.
- FIG. 25 Figure 1 schematically shows an embodiment of a bipolar semi ⁇ conductor-on-insulator device 1, where the semiconductor is a monocrystalline silicon wafer, the device 1 thus being a silicon-on-insulator (SOI) semiconductor device.
- the silicon wafer is denoted 2
- the insulator e.g. a silicon oxide
- the device as illustrated has a generally rectangular cross-section.
- the silicon wafer 2 includes an emitter region 4, a base region 5, and a collector contacting region 6, the collector being the region of the bulk silicon material 2 located between the base region 5 and the collector contacting region 6.
- the emitter region 4 has an n-doping of e.g. arsenic
- the base region has a p-doping of e.g. boron
- the collector con ⁇ tacting region 6 has a heavy n-doping of e.g. arsenic.
- the base-emitter junction and the collector- base junction are parallel to each other and they are both tilted in relation to the interface between the silicon wafer 2 ⁇ oand the insulator 3. This is accomplished by the fact that the thin emitter region or layer 4 and the thin base region or layer 5 are tilted in relation to said interface between the silicon wafer 2 and the insulator 3.
- the angle of tilt of the base-emitter and collector-base isjunctions in relation to the interf ce between the silicon wafer 2 and the insulator 3, is typically in the range of 45° ⁇ 20°, i.e. between 25 and 65°.
- the emitter and base regions 4, 5 are located at an upper edge line of the wafer structure where the structure has a tilted
- the configuration being obtained by cutting away a corner region of the generally rectangular cross-section.
- the emitter and base regions are located at this tilted surface 7, the emitter region 5 being a thin layer located directly inside the tilted surface and the base region 4 being a thin layer
- the emitter and base regions thus extending in parallel to the tilted surface 7.
- the tilted surface 7 is only a surface of the silicon layer 2 and does not extend into the insulator layer 3.
- the collector con ⁇ tacting region 6 is located at the upper edge line of the
- a method of producing the semiconductor device 1 shown comprises etching anisotropically an SOI film, having a (100) silicon crystal orientation of the plane along its surface.
- the etching 5 is made with a solution of KOH in order to produce the tilted surface 7 achieving that this surface will always be located along a (111) crystal plane of the silicon wafer 2.
- T he etc h ing is made only at one of the lateral edges of the SOI film, re ⁇ quiring that a suitable mask is applied before the etching step.
- a base region 5 and an emitter region 4 are doped so that they will be parallel to the tilted surface 7 and thus to a s (111) crystal plane in the silicon wafer 2, which is supposed to already include a collector contacting region 6 made in some earlier processing step.
- the angle of tilt of the parallel base- emitter and collector-base junctions will thus correspond to the angle of tilt of the (111) crystal plane of the silicon wafer 2 ⁇ oin relation to its upper surface.
- Emitter-, base- and collector contacts, not shown, are finally produced in some conventional way such as by making heavily doped contacting regions at suitable places and by producing metallizations on top of these regions or by making polysilicon structures at suitable con- istacting places.
- the method can also be used for producing transistors on a wafer such as for an integrated circuit having several different com ⁇ ponents on the same chip. Then the anisotropic etching is made to produce V-grooves having sides walls located along (111)
- the diagram of Fig. 2 shows a one-dimensional simulation of the 30doping profiles as taken perpendicularly to the tilted surface 7 of the emitter 4 for a typical embodiment of a transistor as described with reference to Fig. 1.
- the various lines drawn illustrate the concentrations of arsenic, boron and phosphorous as functions of the distance from the surface 7.
- the net 35dopant concentration is shown.
- the net donor concentration and the net acceptor concentrations are illustrated as functions of the same distance.
- the net dopant concentration is shown.
- measured values of the actual concentrations of dopant atoms are shown for a npn-transis or doped with arsenic and boron, also as functions of the same perpendicular distance from the tilted surface of the emitter region.
- etching as described above may be used to produce tilted parallel base-emitter and collector-base junctions.
- another crystal surface than the (111) crystal plane of the silicon wafer may be exposed for producing the tilted surface to ⁇ o e doped to achieve a base region and an emitter region parallel to the exposed crystal surface.
- the dimensions of the SOI film are chosen in such a way that the electric field perpendicular to the emitter-base junction will be reduced. This will increase the breakdown voltage of the issemiconductor device. Due to its geometry, the charge is injected into the collector space charge region in the direction of the electric field. Since no potential lock-up is present, and thus, the lateral field is never zero, the transport will be by drift and not by diffusion as in the case of a semiconductor
- the invention is not re ⁇ stricted to the use of silicon as a semiconducting material in 25the semiconductor-on-insulator device.
- silicon e.g. GaAs or SiC may equally well be used.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU20493/97A AU2049397A (en) | 1996-03-07 | 1997-03-05 | Bipolar soi device having a tilted pn-junction, and a method for producing such a device |
EP97908624A EP0963610A1 (en) | 1996-03-07 | 1997-03-05 | Bipolar soi device having a tilted pn-junction, and a method for producing such a device |
JP9531710A JP2000506311A (en) | 1996-03-07 | 1997-03-05 | Bipolar SOI device with graded PN junction and method of manufacturing such device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9600898-2 | 1996-03-07 | ||
SE9600898A SE506510C2 (en) | 1996-03-07 | 1996-03-07 | Semiconductors including inclined base emitter and collector base transitions and method for producing such |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1997033319A1 true WO1997033319A1 (en) | 1997-09-12 |
Family
ID=20401711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/SE1997/000377 WO1997033319A1 (en) | 1996-03-07 | 1997-03-05 | Bipolar soi device having a tilted pn-junction, and a method for producing such a device |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP0963610A1 (en) |
JP (1) | JP2000506311A (en) |
KR (1) | KR19990087554A (en) |
CN (1) | CN1212787A (en) |
AU (1) | AU2049397A (en) |
CA (1) | CA2243998A1 (en) |
SE (1) | SE506510C2 (en) |
WO (1) | WO1997033319A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6482712B1 (en) * | 1996-05-02 | 2002-11-19 | Lg Semicon Co., Ltd. | Method for fabricating a bipolar semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1188688A (en) * | 1966-06-28 | 1970-04-22 | Asea Ab | Semi-conductor Device |
US5040034A (en) * | 1989-01-18 | 1991-08-13 | Nissan Motor Co., Ltd. | Semiconductor device |
-
1996
- 1996-03-07 SE SE9600898A patent/SE506510C2/en not_active IP Right Cessation
-
1997
- 1997-03-05 JP JP9531710A patent/JP2000506311A/en active Pending
- 1997-03-05 WO PCT/SE1997/000377 patent/WO1997033319A1/en not_active Application Discontinuation
- 1997-03-05 CA CA002243998A patent/CA2243998A1/en not_active Abandoned
- 1997-03-05 AU AU20493/97A patent/AU2049397A/en not_active Abandoned
- 1997-03-05 EP EP97908624A patent/EP0963610A1/en not_active Withdrawn
- 1997-03-05 KR KR1019980706992A patent/KR19990087554A/en active IP Right Grant
- 1997-03-05 CN CN97192844A patent/CN1212787A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1188688A (en) * | 1966-06-28 | 1970-04-22 | Asea Ab | Semi-conductor Device |
US5040034A (en) * | 1989-01-18 | 1991-08-13 | Nissan Motor Co., Ltd. | Semiconductor device |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN, Vol. 95, No. 1; & JP,A,06 295 921 (CANON INC) 21 October 1994. * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6482712B1 (en) * | 1996-05-02 | 2002-11-19 | Lg Semicon Co., Ltd. | Method for fabricating a bipolar semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
CA2243998A1 (en) | 1997-09-12 |
SE9600898L (en) | 1997-09-08 |
JP2000506311A (en) | 2000-05-23 |
CN1212787A (en) | 1999-03-31 |
AU2049397A (en) | 1997-09-22 |
SE9600898D0 (en) | 1996-03-07 |
SE506510C2 (en) | 1997-12-22 |
KR19990087554A (en) | 1999-12-27 |
EP0963610A1 (en) | 1999-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0172878B1 (en) | A bipolar transistor with active elements formed in slots | |
US5266813A (en) | Isolation technique for silicon germanium devices | |
US7022578B2 (en) | Heterojunction bipolar transistor using reverse emitter window | |
KR100644497B1 (en) | Lateral heterojunction bipolar transistor and method of fabrication the same | |
US6794237B2 (en) | Lateral heterojunction bipolar transistor | |
US6011297A (en) | Use of multiple slots surrounding base region of a bipolar junction transistor to increase cumulative breakdown voltage | |
US6246104B1 (en) | Semiconductor device and method for manufacturing the same | |
US11127816B2 (en) | Heterojunction bipolar transistors with one or more sealed airgap | |
US11158722B2 (en) | Transistors with lattice structure | |
US7238971B2 (en) | Self-aligned lateral heterojunction bipolar transistor | |
US20050079658A1 (en) | Heterojunction bipolar transistor with self-aligned emitter and sidewall base contact | |
US20050035431A1 (en) | Semiconductor device and method for manufacturing semiconductor device | |
EP0963610A1 (en) | Bipolar soi device having a tilted pn-junction, and a method for producing such a device | |
US6972237B2 (en) | Lateral heterojunction bipolar transistor and method of manufacture using selective epitaxial growth | |
US8039351B2 (en) | Method of fabricating hetero-junction bipolar transistor (HBT) | |
US7049201B2 (en) | Method and apparatus for a heterojunction bipolar transistor using self-aligned epitaxy | |
EP0138563A2 (en) | Lateral transistors | |
CN115842049A (en) | Insulated gate bipolar transistor and manufacturing method thereof | |
US5912501A (en) | Elimination of radius of curvature effects of p-n junction avalanche breakdown using slots | |
US5939759A (en) | Silicon-on-insulator device with floating collector | |
Arnborg et al. | Analysis of new high-voltage bipolar Silicon-On-Insulator transistor with fully depleted collector | |
US5306944A (en) | Semiconductor structure within DI islands having bottom projection for controlling device characteristics | |
US20230369475A1 (en) | Insulated-gate bipolar transistor (igbt) device with 3d isolation | |
Arnborg | Modelling and simulation of high speed, high voltage bipolar SOI transistor with fully depleted collector | |
Kim et al. | A novel high voltage bipolar technology featuring trench-isolated base |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 97192844.4 Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE GH HU IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK TJ TM TR TT UA UG US UZ VN YU AM AZ BY KG KZ MD RU TJ TM |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH KE LS MW SD SZ UG AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
ENP | Entry into the national phase |
Ref document number: 2243998 Country of ref document: CA Ref document number: 2243998 Country of ref document: CA Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1997908624 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1019980706992 Country of ref document: KR |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
WWP | Wipo information: published in national office |
Ref document number: 1997908624 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1019980706992 Country of ref document: KR |
|
WWG | Wipo information: grant in national office |
Ref document number: 1019980706992 Country of ref document: KR |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 1997908624 Country of ref document: EP |