GB1188688A - Semi-conductor Device - Google Patents

Semi-conductor Device

Info

Publication number
GB1188688A
GB1188688A GB2955267A GB2955267A GB1188688A GB 1188688 A GB1188688 A GB 1188688A GB 2955267 A GB2955267 A GB 2955267A GB 2955267 A GB2955267 A GB 2955267A GB 1188688 A GB1188688 A GB 1188688A
Authority
GB
United Kingdom
Prior art keywords
layer
semi
junction
conductor
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2955267A
Inventor
Per Svedberg
Folke Swenborg
Olle Edqvist
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Norden Holding AB
Original Assignee
ASEA AB
Allmanna Svenska Elektriska AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASEA AB, Allmanna Svenska Elektriska AB filed Critical ASEA AB
Publication of GB1188688A publication Critical patent/GB1188688A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,188,688. Semi-conductor devices. ALLMANNA SVENSKA ELEKTRISKA A.B. 27 June, 1967 [28 June, 1966], No. 29552/67. Heading H1K. The PN junction 1 between regions 3 and 8 of a semi-conductor body is formed by diffusion of suitable impurity into a plane surface 2 of the body under such conditions that the angle α between the junction 1 and the surface 2 is less than 45 degrees and preferably within the range 1 to 10 degrees. The junction may be the sole junction of a diode or, as shown, the centre junction of a PNPN thyristor. To achieve the required value for the angle α, the surface 2 is covered before diffusion with a layer of a substance in which the diffusion rate is at most of the same order as the rate of diffusion in the semi-conductor, e.g. in the case of silicon as semi-conductor a layer of silicon dioxide or nitride or carbide. This layer is thin or non-existent at the centre of the surface 2 and of progressively increasing thickness towards the edge. When impurity is diffused through this layer into the semi-conductor. the depth of penetration into the latter is of gradually diminishing extent with increasing distance from the centre, thus providing the required tapering shape for the junction edge. In a preferred process (Figs. 3a to 3c, not shown) the retarding layer (4) is of SiO 2 and, before diffusion, both this layer and the surfaces of the semi-conductor body not covered by the layer are covered with polycrystalline silicon (5). The latter acts as a barrier between the SiO 2 and a subsequently deposited layer (6) of dopant, to prevent the SiO 2 from dissolving in the dopant layer.
GB2955267A 1966-06-28 1967-06-27 Semi-conductor Device Expired GB1188688A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE878166 1966-06-28

Publications (1)

Publication Number Publication Date
GB1188688A true GB1188688A (en) 1970-04-22

Family

ID=20275012

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2955267A Expired GB1188688A (en) 1966-06-28 1967-06-27 Semi-conductor Device

Country Status (4)

Country Link
CH (1) CH469357A (en)
DE (1) DE1589453A1 (en)
GB (1) GB1188688A (en)
NL (1) NL6708951A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961354A (en) * 1972-11-17 1976-06-01 Matsushita Electronics Corporation Mesa type thyristor and its making method
JPS5142915B1 (en) * 1970-10-14 1976-11-18
US4081821A (en) * 1974-12-23 1978-03-28 Bbc Brown Boveri & Company Limited Bistable semiconductor component for high frequencies having four zones of alternating opposed types of conductivity
WO1997033319A1 (en) * 1996-03-07 1997-09-12 Telefonaktiebolaget L M Ericsson (Publ) Bipolar soi device having a tilted pn-junction, and a method for producing such a device
DE10250608A1 (en) * 2002-10-30 2004-05-19 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Thyristor device with improved reverse blocking behavior

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5142915B1 (en) * 1970-10-14 1976-11-18
US3961354A (en) * 1972-11-17 1976-06-01 Matsushita Electronics Corporation Mesa type thyristor and its making method
US4081821A (en) * 1974-12-23 1978-03-28 Bbc Brown Boveri & Company Limited Bistable semiconductor component for high frequencies having four zones of alternating opposed types of conductivity
WO1997033319A1 (en) * 1996-03-07 1997-09-12 Telefonaktiebolaget L M Ericsson (Publ) Bipolar soi device having a tilted pn-junction, and a method for producing such a device
DE10250608A1 (en) * 2002-10-30 2004-05-19 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Thyristor device with improved reverse blocking behavior
DE10250608B4 (en) * 2002-10-30 2005-09-29 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Thyristor device with improved blocking behavior in the reverse direction

Also Published As

Publication number Publication date
NL6708951A (en) 1967-12-29
CH469357A (en) 1969-02-28
DE1589453A1 (en) 1970-04-02

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees