SE8306017D0 - Elektriskt vexlingsbart, icke-flyktigt minnesorgan med svevande styre - Google Patents
Elektriskt vexlingsbart, icke-flyktigt minnesorgan med svevande styreInfo
- Publication number
- SE8306017D0 SE8306017D0 SE8306017A SE8306017A SE8306017D0 SE 8306017 D0 SE8306017 D0 SE 8306017D0 SE 8306017 A SE8306017 A SE 8306017A SE 8306017 A SE8306017 A SE 8306017A SE 8306017 D0 SE8306017 D0 SE 8306017D0
- Authority
- SE
- Sweden
- Prior art keywords
- memorial
- exchanged
- memory
- electric
- floating gate
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Cold Air Circulating Systems And Constructional Details In Refrigerators (AREA)
- Power-Operated Mechanisms For Wings (AREA)
- Refrigerator Housings (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8206906 | 1982-03-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
SE8306017L SE8306017L (sv) | 1983-11-02 |
SE8306017D0 true SE8306017D0 (sv) | 1983-11-02 |
Family
ID=10528892
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE8306017A SE8306017D0 (sv) | 1982-03-09 | 1983-11-02 | Elektriskt vexlingsbart, icke-flyktigt minnesorgan med svevande styre |
Country Status (7)
Country | Link |
---|---|
US (1) | US4442447A (xx) |
JP (1) | JPS59500342A (xx) |
DE (1) | DE3334295T1 (xx) |
GB (1) | GB2126787B (xx) |
IT (1) | IT1171655B (xx) |
SE (1) | SE8306017D0 (xx) |
WO (1) | WO1983003166A1 (xx) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5857750A (ja) * | 1981-10-01 | 1983-04-06 | Seiko Instr & Electronics Ltd | 不揮発性半導体メモリ |
US4590503A (en) * | 1983-07-21 | 1986-05-20 | Honeywell Inc. | Electrically erasable programmable read only memory |
US4608591A (en) * | 1983-08-17 | 1986-08-26 | Rca Corporation | Electrically alterable programmable nonvolatile floating gate memory device |
US4933904A (en) * | 1985-11-29 | 1990-06-12 | General Electric Company | Dense EPROM having serially coupled floating gate transistors |
IT1191561B (it) * | 1986-06-03 | 1988-03-23 | Sgs Microelettrica Spa | Dispositivo di memoria non labile a semiconduttore con porta non connessa (floating gate) alterabile elettricamente |
US4845538A (en) * | 1988-02-05 | 1989-07-04 | Emanuel Hazani | E2 prom cell including isolated control diffusion |
US4951103A (en) * | 1988-06-03 | 1990-08-21 | Texas Instruments, Incorporated | Fast, trench isolated, planar flash EEPROMS with silicided bitlines |
FR2650109B1 (fr) * | 1989-07-20 | 1993-04-02 | Gemplus Card Int | Circuit integre mos a tension de seuil ajustable |
DE10212878B4 (de) * | 2002-03-22 | 2007-11-29 | Qimonda Ag | Halbleiterschaltungsanordnung und Halbleiterspeichereinrichtung |
US7999299B2 (en) * | 2005-06-23 | 2011-08-16 | Samsung Electronics Co., Ltd. | Semiconductor memory device having capacitor for peripheral circuit |
KR20090120689A (ko) * | 2008-05-20 | 2009-11-25 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 상기 비휘발성 메모리 장치의제조 방법 |
US9711516B2 (en) * | 2015-10-30 | 2017-07-18 | Taiwan Semiconductor Manufacturing Company Ltd. | Non-volatile memory having a gate-layered triple well structure |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3500142A (en) * | 1967-06-05 | 1970-03-10 | Bell Telephone Labor Inc | Field effect semiconductor apparatus with memory involving entrapment of charge carriers |
NL7500550A (nl) * | 1975-01-17 | 1976-07-20 | Philips Nv | Halfgeleider-geheugeninrichting. |
US4115914A (en) * | 1976-03-26 | 1978-09-26 | Hughes Aircraft Company | Electrically erasable non-volatile semiconductor memory |
US4122544A (en) * | 1976-12-27 | 1978-10-24 | Texas Instruments Incorporated | Electrically alterable floating gate semiconductor memory device with series enhancement transistor |
DE2844878A1 (de) * | 1978-10-14 | 1980-04-30 | Itt Ind Gmbh Deutsche | Integrierbarer isolierschicht-feldeffekttransistor |
US4328565A (en) * | 1980-04-07 | 1982-05-04 | Eliyahou Harari | Non-volatile eprom with increased efficiency |
US4375087C1 (en) * | 1980-04-09 | 2002-01-01 | Hughes Aircraft Co | Electrically erasable programmable read-only memory |
-
1983
- 1983-03-07 US US06/472,636 patent/US4442447A/en not_active Expired - Fee Related
- 1983-03-07 WO PCT/US1983/000294 patent/WO1983003166A1/en active Application Filing
- 1983-03-07 JP JP58501340A patent/JPS59500342A/ja active Pending
- 1983-03-07 GB GB08328185A patent/GB2126787B/en not_active Expired
- 1983-03-07 DE DE19833334295 patent/DE3334295T1/de not_active Withdrawn
- 1983-03-08 IT IT19952/83A patent/IT1171655B/it active
- 1983-11-02 SE SE8306017A patent/SE8306017D0/xx not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
GB8328185D0 (en) | 1983-11-23 |
US4442447A (en) | 1984-04-10 |
WO1983003166A1 (en) | 1983-09-15 |
IT8319952A1 (it) | 1984-09-08 |
JPS59500342A (ja) | 1984-03-01 |
DE3334295T1 (de) | 1984-03-22 |
GB2126787B (en) | 1985-10-16 |
IT1171655B (it) | 1987-06-10 |
SE8306017L (sv) | 1983-11-02 |
IT8319952A0 (it) | 1983-03-08 |
GB2126787A (en) | 1984-03-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NAV | Patent application has lapsed |
Ref document number: 8306017-8 Effective date: 19870210 |