IT1209430B - Metodo di programmazione per una memoria a semiconduttore nonvolatile elettricamente alterabile del tipo cancellabile per gruppi di celle. - Google Patents
Metodo di programmazione per una memoria a semiconduttore nonvolatile elettricamente alterabile del tipo cancellabile per gruppi di celle.Info
- Publication number
- IT1209430B IT1209430B IT7926306A IT2630679A IT1209430B IT 1209430 B IT1209430 B IT 1209430B IT 7926306 A IT7926306 A IT 7926306A IT 2630679 A IT2630679 A IT 2630679A IT 1209430 B IT1209430 B IT 1209430B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor memory
- cell groups
- programming method
- electrically alterable
- erase type
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT7926306A IT1209430B (it) | 1979-10-08 | 1979-10-08 | Metodo di programmazione per una memoria a semiconduttore nonvolatile elettricamente alterabile del tipo cancellabile per gruppi di celle. |
GB8025617A GB2061651B (en) | 1979-10-08 | 1980-08-06 | Method of programming an electrically alterable read only memory |
FR8020186A FR2467463A1 (fr) | 1979-10-08 | 1980-09-19 | Procede de programmation pour une memoire non volatile a semi-conducteur modifiable electriquement du type effacable par groupes de cellules |
DE19803037895 DE3037895A1 (de) | 1979-10-08 | 1980-10-07 | Verfahren zum programmieren eines elektrisch veraenderbaren nicht-fluechtigen halbleiterspeichers, der fuer zellengruppen loeschbar ist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT7926306A IT1209430B (it) | 1979-10-08 | 1979-10-08 | Metodo di programmazione per una memoria a semiconduttore nonvolatile elettricamente alterabile del tipo cancellabile per gruppi di celle. |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7926306A0 IT7926306A0 (it) | 1979-10-08 |
IT1209430B true IT1209430B (it) | 1989-07-16 |
Family
ID=11219192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT7926306A IT1209430B (it) | 1979-10-08 | 1979-10-08 | Metodo di programmazione per una memoria a semiconduttore nonvolatile elettricamente alterabile del tipo cancellabile per gruppi di celle. |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE3037895A1 (it) |
FR (1) | FR2467463A1 (it) |
GB (1) | GB2061651B (it) |
IT (1) | IT1209430B (it) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0108681A3 (en) * | 1982-11-04 | 1986-10-15 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | Bit erasable electrically erasable programmable read only memory |
US5268319A (en) | 1988-06-08 | 1993-12-07 | Eliyahou Harari | Highly compact EPROM and flash EEPROM devices |
DE69033262T2 (de) | 1989-04-13 | 2000-02-24 | Sandisk Corp | EEPROM-Karte mit Austauch von fehlerhaften Speicherzellen und Zwischenspeicher |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3824564A (en) * | 1973-07-19 | 1974-07-16 | Sperry Rand Corp | Integrated threshold mnos memory with decoder and operating sequence |
-
1979
- 1979-10-08 IT IT7926306A patent/IT1209430B/it active
-
1980
- 1980-08-06 GB GB8025617A patent/GB2061651B/en not_active Expired
- 1980-09-19 FR FR8020186A patent/FR2467463A1/fr active Granted
- 1980-10-07 DE DE19803037895 patent/DE3037895A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB2061651A (en) | 1981-05-13 |
FR2467463A1 (fr) | 1981-04-17 |
DE3037895A1 (de) | 1981-04-16 |
FR2467463B1 (it) | 1984-12-21 |
IT7926306A0 (it) | 1979-10-08 |
GB2061651B (en) | 1984-02-08 |
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TA | Fee payment date (situation as of event date), data collected since 19931001 |
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