GB2061651B - Method of programming an electrically alterable read only memory - Google Patents

Method of programming an electrically alterable read only memory

Info

Publication number
GB2061651B
GB2061651B GB8025617A GB8025617A GB2061651B GB 2061651 B GB2061651 B GB 2061651B GB 8025617 A GB8025617 A GB 8025617A GB 8025617 A GB8025617 A GB 8025617A GB 2061651 B GB2061651 B GB 2061651B
Authority
GB
United Kingdom
Prior art keywords
programming
memory
electrically alterable
alterable read
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8025617A
Other versions
GB2061651A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of GB2061651A publication Critical patent/GB2061651A/en
Application granted granted Critical
Publication of GB2061651B publication Critical patent/GB2061651B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
GB8025617A 1979-10-08 1980-08-06 Method of programming an electrically alterable read only memory Expired GB2061651B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT7926306A IT1209430B (en) 1979-10-08 1979-10-08 PROGRAMMING METHOD FOR AN ELECTRICALLY ALTERABLE SEMICONDUCTOR MEMORY OF THE ERASE TYPE FOR CELL GROUPS.

Publications (2)

Publication Number Publication Date
GB2061651A GB2061651A (en) 1981-05-13
GB2061651B true GB2061651B (en) 1984-02-08

Family

ID=11219192

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8025617A Expired GB2061651B (en) 1979-10-08 1980-08-06 Method of programming an electrically alterable read only memory

Country Status (4)

Country Link
DE (1) DE3037895A1 (en)
FR (1) FR2467463A1 (en)
GB (1) GB2061651B (en)
IT (1) IT1209430B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7266017B2 (en) 1989-04-13 2007-09-04 Sandisk Corporation Method for selective erasing and parallel programming/verifying of cell blocks in a flash EEprom system

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0108681A3 (en) * 1982-11-04 1986-10-15 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Bit erasable electrically erasable programmable read only memory
US5268319A (en) 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3824564A (en) * 1973-07-19 1974-07-16 Sperry Rand Corp Integrated threshold mnos memory with decoder and operating sequence

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7266017B2 (en) 1989-04-13 2007-09-04 Sandisk Corporation Method for selective erasing and parallel programming/verifying of cell blocks in a flash EEprom system
US7283397B2 (en) 1989-04-13 2007-10-16 Sandisk Corporation Flash EEprom system capable of selective erasing and parallel programming/verifying memory cell blocks

Also Published As

Publication number Publication date
GB2061651A (en) 1981-05-13
IT1209430B (en) 1989-07-16
FR2467463A1 (en) 1981-04-17
FR2467463B1 (en) 1984-12-21
IT7926306A0 (en) 1979-10-08
DE3037895A1 (en) 1981-04-16

Similar Documents

Publication Publication Date Title
DE3063206D1 (en) Improved read only memory and method of programming such a memory
DE3176416D1 (en) Electrically alterable read only memory cell
DE3166342D1 (en) Electrically alterable double dense memory
GB2028044B (en) Precharge circuit for memory array
GB2073488B (en) Electrically erasable programmable read only memory
JPS5654694A (en) Semiifixed memory unit integrated circuit and method of programming same circuit
JPS54125938A (en) Semiconductor memory and programming method therefor
JPS5637888A (en) Memory read method and circuit thereof
EP0202785A3 (en) Nonvolatile electrically alterable memory
DE3071662D1 (en) High-density read-only memory
DE3176751D1 (en) Semiconductor memory with improved data programming time
JPS5593588A (en) Memory array
DE3265131D1 (en) Electrically erasable programmable read only memory
DE3061748D1 (en) A programming circuit for a programmable read only memory
JPS567300A (en) Method of measuring access time of memory
GB2099649B (en) Electrically programable read only memory
JPS5764393A (en) Memory array
GB2046963B (en) Control memory
GB2126787B (en) An electrically alterable nonvolatile floating-gate memory device
GB2032687B (en) Electrically programmable floating gate read only memory array
JPS56144490A (en) Data memory
JPS5694581A (en) Memory array
JPS55153195A (en) Memory reading voltage circuit
GB2061651B (en) Method of programming an electrically alterable read only memory
JPS5720994A (en) Programmable read only memory cell and process for producing same

Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20000805