IT7926306A0 - PROGRAMMING METHOD FOR AN ELECTRICALLY ALTERABLE NONVOLATILE SEMICONDUCTOR MEMORY OF THE ERASABLE TYPE FOR GROUPS OF CELLS. - Google Patents
PROGRAMMING METHOD FOR AN ELECTRICALLY ALTERABLE NONVOLATILE SEMICONDUCTOR MEMORY OF THE ERASABLE TYPE FOR GROUPS OF CELLS.Info
- Publication number
- IT7926306A0 IT7926306A0 IT7926306A IT2630679A IT7926306A0 IT 7926306 A0 IT7926306 A0 IT 7926306A0 IT 7926306 A IT7926306 A IT 7926306A IT 2630679 A IT2630679 A IT 2630679A IT 7926306 A0 IT7926306 A0 IT 7926306A0
- Authority
- IT
- Italy
- Prior art keywords
- cells
- groups
- semiconductor memory
- nonvolatile semiconductor
- programming method
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT7926306A IT1209430B (en) | 1979-10-08 | 1979-10-08 | PROGRAMMING METHOD FOR AN ELECTRICALLY ALTERABLE SEMICONDUCTOR MEMORY OF THE ERASE TYPE FOR CELL GROUPS. |
GB8025617A GB2061651B (en) | 1979-10-08 | 1980-08-06 | Method of programming an electrically alterable read only memory |
FR8020186A FR2467463A1 (en) | 1979-10-08 | 1980-09-19 | PROGRAMMING METHOD FOR A NON-VOLATILE ELECTRICALLY MODIFIABLE SEMICONDUCTOR MEMORY OF THE CELL GROUP ERASABLE TYPE |
DE19803037895 DE3037895A1 (en) | 1979-10-08 | 1980-10-07 | METHOD FOR PROGRAMMING AN ELECTRICALLY CHANGEABLE NON-VOLATILE SEMICONDUCTOR MEMORY THAT CAN BE ERASED FOR CELL GROUPS |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT7926306A IT1209430B (en) | 1979-10-08 | 1979-10-08 | PROGRAMMING METHOD FOR AN ELECTRICALLY ALTERABLE SEMICONDUCTOR MEMORY OF THE ERASE TYPE FOR CELL GROUPS. |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7926306A0 true IT7926306A0 (en) | 1979-10-08 |
IT1209430B IT1209430B (en) | 1989-07-16 |
Family
ID=11219192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT7926306A IT1209430B (en) | 1979-10-08 | 1979-10-08 | PROGRAMMING METHOD FOR AN ELECTRICALLY ALTERABLE SEMICONDUCTOR MEMORY OF THE ERASE TYPE FOR CELL GROUPS. |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE3037895A1 (en) |
FR (1) | FR2467463A1 (en) |
GB (1) | GB2061651B (en) |
IT (1) | IT1209430B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0108681A3 (en) * | 1982-11-04 | 1986-10-15 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | Bit erasable electrically erasable programmable read only memory |
US5268319A (en) | 1988-06-08 | 1993-12-07 | Eliyahou Harari | Highly compact EPROM and flash EEPROM devices |
EP0392895B1 (en) | 1989-04-13 | 1995-12-13 | Sundisk Corporation | Flash EEprom system |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3824564A (en) * | 1973-07-19 | 1974-07-16 | Sperry Rand Corp | Integrated threshold mnos memory with decoder and operating sequence |
-
1979
- 1979-10-08 IT IT7926306A patent/IT1209430B/en active
-
1980
- 1980-08-06 GB GB8025617A patent/GB2061651B/en not_active Expired
- 1980-09-19 FR FR8020186A patent/FR2467463A1/en active Granted
- 1980-10-07 DE DE19803037895 patent/DE3037895A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
FR2467463B1 (en) | 1984-12-21 |
IT1209430B (en) | 1989-07-16 |
GB2061651A (en) | 1981-05-13 |
GB2061651B (en) | 1984-02-08 |
FR2467463A1 (en) | 1981-04-17 |
DE3037895A1 (en) | 1981-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT7926071A0 (en) | PROGRAMMING METHOD FOR AN ELECTRICALLY ALTERABLE NONVOLATILE SEMICONDUCTOR MEMORY. | |
IT8022538A0 (en) | ELECTRICALLY ALTERABLE FLOATING 'GATE' NON-VOLATILE MEMORY CELL. | |
DE3885408D1 (en) | Non-volatile memory cell. | |
DE3176699D1 (en) | NON-VOLATILE SEMICONDUCTOR MEMORY CELL | |
GB2126788B (en) | An electrically alterable nonvolatile floating gate memory device | |
DE68918880D1 (en) | Electrically erasable non-volatile semiconductor memory device. | |
DE69636178D1 (en) | Method for erasing a flash EEPROM memory cell | |
DE3576013D1 (en) | NON-VOLATILE SEMICONDUCTOR MEMORY. | |
EP0045469A3 (en) | Non-volatile, programmable integrated semiconductor memory cell | |
FR2430064B1 (en) | NON-VOLATILE MEMORY, ELECTRICALLY ERASABLE BY WORD | |
DE3177270D1 (en) | SEMICONDUCTOR MEMORY WITH DATA PROGRAMMING TIME. | |
CA1023858A (en) | Nonvolatile capacitive memory cell | |
CA996262A (en) | Nonvolatile memory cell | |
EP0108681A3 (en) | Bit erasable electrically erasable programmable read only memory | |
IT7925552A0 (en) | SET OF MEMORY DEVICES, FOR READING ONLY, WITH FLOATING DOOR, ELECTRICALLY PROGRAMMABLE. | |
IT1171655B (en) | NON-VOLATILE MEMORY DEVICE, WITH DOOR NOT ELECTRICALLY CONNECTED, ELECTRICALLY ALTERABLE | |
IT7919301A0 (en) | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURE THEREOF. | |
IT7926306A0 (en) | PROGRAMMING METHOD FOR AN ELECTRICALLY ALTERABLE NONVOLATILE SEMICONDUCTOR MEMORY OF THE ERASABLE TYPE FOR GROUPS OF CELLS. | |
IT8222819A0 (en) | NONVOLATILE MEMORY DEVICE. | |
DE3483765D1 (en) | ELECTRICALLY ERASABLE AND PROGRAMMABLE NON-VOLATILE SEMICONDUCTOR MEMORY ARRANGEMENT WITH TWO GATE ELECTRODES. | |
DE3586766D1 (en) | NON-VOLATILE SEMICONDUCTOR MEMORY CELL. | |
IT8322256A0 (en) | RAM TYPE MEMORY CELL WITH ELECTRICALLY PROGRAMMABLE NON-VOLATILE MEMORY ELEMENT. | |
IT1171657B (en) | NON-VOLATILE MEMORY DEVICE, WITH DOOR NOT ELECTRICALLY CONNECTED, ELECTRICALLY ALTERABLE, WITH DOUBLE WORD LINE | |
GB2116367B (en) | An electrically alterable, nonvolatile floating gate memory device | |
GB2117177B (en) | An electrically alterable, nonvolatile floating gate memory device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19971030 |