FR2430064B1 - NON-VOLATILE MEMORY, ELECTRICALLY ERASABLE BY WORD - Google Patents

NON-VOLATILE MEMORY, ELECTRICALLY ERASABLE BY WORD

Info

Publication number
FR2430064B1
FR2430064B1 FR7916728A FR7916728A FR2430064B1 FR 2430064 B1 FR2430064 B1 FR 2430064B1 FR 7916728 A FR7916728 A FR 7916728A FR 7916728 A FR7916728 A FR 7916728A FR 2430064 B1 FR2430064 B1 FR 2430064B1
Authority
FR
France
Prior art keywords
word
volatile memory
electrically erasable
erasable
electrically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7916728A
Other languages
French (fr)
Other versions
FR2430064A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2430064A1 publication Critical patent/FR2430064A1/en
Application granted granted Critical
Publication of FR2430064B1 publication Critical patent/FR2430064B1/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
FR7916728A 1978-06-30 1979-06-28 NON-VOLATILE MEMORY, ELECTRICALLY ERASABLE BY WORD Expired FR2430064B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782828836 DE2828836C2 (en) 1978-06-30 1978-06-30 Non-volatile memory that can be electrically erased word by word

Publications (2)

Publication Number Publication Date
FR2430064A1 FR2430064A1 (en) 1980-01-25
FR2430064B1 true FR2430064B1 (en) 1985-10-18

Family

ID=6043234

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7916728A Expired FR2430064B1 (en) 1978-06-30 1979-06-28 NON-VOLATILE MEMORY, ELECTRICALLY ERASABLE BY WORD

Country Status (4)

Country Link
JP (1) JPS558697A (en)
DE (1) DE2828836C2 (en)
FR (1) FR2430064B1 (en)
GB (1) GB2029145B (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1224062B (en) * 1979-09-28 1990-09-26 Ates Componenti Elettron PROGRAMMING METHOD FOR AN ELECTRICALLY ALTERABLE NON-VOLATILE SEMICONDUCTOR MEMORY
US4797856A (en) * 1987-04-16 1989-01-10 Intel Corporation Self-limiting erase scheme for EEPROM
US4875188A (en) * 1988-01-12 1989-10-17 Intel Corporation Voltage margining circuit for flash eprom
KR900019027A (en) * 1988-05-23 1990-12-22 미다 가쓰시게 Nonvolatile Semiconductor Memory
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US4888738A (en) * 1988-06-29 1989-12-19 Seeq Technology Current-regulated, voltage-regulated erase circuit for EEPROM memory
US5844842A (en) * 1989-02-06 1998-12-01 Hitachi, Ltd. Nonvolatile semiconductor memory device
JP2654596B2 (en) * 1989-02-06 1997-09-17 株式会社日立製作所 Non-volatile storage device
EP0935255A2 (en) 1989-04-13 1999-08-11 SanDisk Corporation Flash EEPROM system
FR2647941B1 (en) * 1989-06-06 1991-08-30 Gemplus Card Int MEMORY POINT ERASING METHOD, DEVICE FOR ITS IMPLEMENTATION, AND ITS USE IN A NON-POWERED MEMORY DEVICE
DE69013237T2 (en) * 1989-06-19 1995-02-23 Texas Instruments Inc Circuit and procedure for preparing deleted EEPROMS before programming.
JP3448051B2 (en) * 1990-03-31 2003-09-16 株式会社東芝 Nonvolatile semiconductor memory device
JP2709751B2 (en) * 1990-06-15 1998-02-04 三菱電機株式会社 Nonvolatile semiconductor memory device and data erasing method thereof
US6781895B1 (en) 1991-12-19 2004-08-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
JP3512833B2 (en) * 1993-09-17 2004-03-31 株式会社東芝 Nonvolatile semiconductor memory device
KR0169267B1 (en) 1993-09-21 1999-02-01 사토 후미오 Nonvolatile semiconductor memory device
JP3202498B2 (en) * 1994-03-15 2001-08-27 株式会社東芝 Semiconductor storage device
JP2987105B2 (en) * 1996-06-10 1999-12-06 ハライ エリヤホウ Flash EEprom memory system and its use

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2643987C2 (en) * 1974-09-20 1984-03-29 Siemens AG, 1000 Berlin und 8000 München n-channel memory FET
JPS5193638A (en) * 1975-02-14 1976-08-17
JPS5823677B2 (en) * 1976-05-18 1983-05-17 三菱電機株式会社 memory erasing device
JPS5330838A (en) * 1976-09-03 1978-03-23 Fujitsu Ltd Erasing method of erasable rom

Also Published As

Publication number Publication date
JPS558697A (en) 1980-01-22
GB2029145B (en) 1982-06-16
FR2430064A1 (en) 1980-01-25
DE2828836A1 (en) 1980-01-03
GB2029145A (en) 1980-03-12
JPH0146949B2 (en) 1989-10-11
DE2828836C2 (en) 1983-01-05

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Legal Events

Date Code Title Description
ST Notification of lapse