JPS558697A - Nonnvolatile memory erasable electrically in word unit - Google Patents

Nonnvolatile memory erasable electrically in word unit

Info

Publication number
JPS558697A
JPS558697A JP8254279A JP8254279A JPS558697A JP S558697 A JPS558697 A JP S558697A JP 8254279 A JP8254279 A JP 8254279A JP 8254279 A JP8254279 A JP 8254279A JP S558697 A JPS558697 A JP S558697A
Authority
JP
Japan
Prior art keywords
nonnvolatile
word unit
erasable electrically
memory erasable
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8254279A
Other languages
Japanese (ja)
Other versions
JPH0146949B2 (en
Inventor
Shiyurenku Harutomuuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS558697A publication Critical patent/JPS558697A/en
Publication of JPH0146949B2 publication Critical patent/JPH0146949B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits

Landscapes

  • Read Only Memory (AREA)
JP8254279A 1978-06-30 1979-06-29 Nonnvolatile memory erasable electrically in word unit Granted JPS558697A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782828836 DE2828836C2 (en) 1978-06-30 1978-06-30 Non-volatile memory that can be electrically erased word by word

Publications (2)

Publication Number Publication Date
JPS558697A true JPS558697A (en) 1980-01-22
JPH0146949B2 JPH0146949B2 (en) 1989-10-11

Family

ID=6043234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8254279A Granted JPS558697A (en) 1978-06-30 1979-06-29 Nonnvolatile memory erasable electrically in word unit

Country Status (4)

Country Link
JP (1) JPS558697A (en)
DE (1) DE2828836C2 (en)
FR (1) FR2430064B1 (en)
GB (1) GB2029145B (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH025297A (en) * 1988-01-12 1990-01-10 Intel Corp Electrically erasable and electrically programmable read only memory
JPH02118997A (en) * 1988-06-08 1990-05-07 Eliyahou Harari Flash eeprom memory system and use thereof
JPH02289997A (en) * 1989-02-06 1990-11-29 Hitachi Ltd Semiconductor nonvolatile memory and information processing system using same
JPH0395798A (en) * 1989-06-06 1991-04-22 Gemplus Card Internatl Sa Method and apparatus for erasing memory cell and method of using the method in apparatus with non-elecrified memory
US5097446A (en) * 1988-05-23 1992-03-17 Hitachi, Ltd. Nonvolatile semiconductor memory device
JPH04228193A (en) * 1990-06-15 1992-08-18 Mitsubishi Electric Corp Non-volatile semiconductor memory and data erasing method thereof
JPH09120690A (en) * 1996-06-10 1997-05-06 Eliyahou Harari Flash eeprom memory system and its usage method
US5844842A (en) * 1989-02-06 1998-12-01 Hitachi, Ltd. Nonvolatile semiconductor memory device

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1224062B (en) * 1979-09-28 1990-09-26 Ates Componenti Elettron PROGRAMMING METHOD FOR AN ELECTRICALLY ALTERABLE NON-VOLATILE SEMICONDUCTOR MEMORY
US4797856A (en) * 1987-04-16 1989-01-10 Intel Corporation Self-limiting erase scheme for EEPROM
US4888738A (en) * 1988-06-29 1989-12-19 Seeq Technology Current-regulated, voltage-regulated erase circuit for EEPROM memory
EP0618535B1 (en) 1989-04-13 1999-08-25 SanDisk Corporation EEPROM card with defective cell substitution and cache memory
EP0403822B1 (en) * 1989-06-19 1994-10-12 Texas Instruments Incorporated Circuit and method for conditioning erased eeproms prior to programming
JP3448051B2 (en) * 1990-03-31 2003-09-16 株式会社東芝 Nonvolatile semiconductor memory device
US6781895B1 (en) 1991-12-19 2004-08-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
JP3512833B2 (en) * 1993-09-17 2004-03-31 株式会社東芝 Nonvolatile semiconductor memory device
KR0169267B1 (en) 1993-09-21 1999-02-01 사토 후미오 Nonvolatile semiconductor memory device
JP3202498B2 (en) * 1994-03-15 2001-08-27 株式会社東芝 Semiconductor storage device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5193638A (en) * 1975-02-14 1976-08-17

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2643987C2 (en) * 1974-09-20 1984-03-29 Siemens AG, 1000 Berlin und 8000 München n-channel memory FET
JPS5823677B2 (en) * 1976-05-18 1983-05-17 三菱電機株式会社 memory erasing device
JPS5330838A (en) * 1976-09-03 1978-03-23 Fujitsu Ltd Erasing method of erasable rom

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5193638A (en) * 1975-02-14 1976-08-17

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH025297A (en) * 1988-01-12 1990-01-10 Intel Corp Electrically erasable and electrically programmable read only memory
US5097446A (en) * 1988-05-23 1992-03-17 Hitachi, Ltd. Nonvolatile semiconductor memory device
JPH02118997A (en) * 1988-06-08 1990-05-07 Eliyahou Harari Flash eeprom memory system and use thereof
US6157576A (en) * 1989-02-06 2000-12-05 Hitachi, Ltd. Nonvolatile semiconductor memory device
US6259629B1 (en) 1989-02-06 2001-07-10 Hitachi, Ltd. Nonvolatile semiconductor memory device
US7372741B2 (en) 1989-02-06 2008-05-13 Renesas Technology Corp. Nonvolatile memory apparatus having a processor and plural memories one or more of which is a nonvolatile memory having circuitry which performs an erase operation and an erase verify operation when the processor specifies the erase operation mode to the nonvolatile memory
US7099199B2 (en) 1989-02-06 2006-08-29 Renesas Technology Corp. Nonvolatile semiconductor memory device
US5844842A (en) * 1989-02-06 1998-12-01 Hitachi, Ltd. Nonvolatile semiconductor memory device
JPH02289997A (en) * 1989-02-06 1990-11-29 Hitachi Ltd Semiconductor nonvolatile memory and information processing system using same
US6181600B1 (en) 1989-02-06 2001-01-30 Hitachi, Ltd Nonvolatile semiconductor memory device
US7020028B2 (en) 1989-02-06 2006-03-28 Renesas Technology Corp. Nonvolatile semiconductor memory device
US6438036B2 (en) 1989-02-06 2002-08-20 Hitachi, Ltd. Nonvolatile semiconductor memory device
US6747902B2 (en) 1989-02-06 2004-06-08 Renesas Technology Corp. Nonvolatile semiconductor memory apparatus
US6791882B2 (en) 1989-02-06 2004-09-14 Renesas Technology Corp. Nonvolatile semiconductor memory device
JPH0395798A (en) * 1989-06-06 1991-04-22 Gemplus Card Internatl Sa Method and apparatus for erasing memory cell and method of using the method in apparatus with non-elecrified memory
JPH04228193A (en) * 1990-06-15 1992-08-18 Mitsubishi Electric Corp Non-volatile semiconductor memory and data erasing method thereof
JPH09120690A (en) * 1996-06-10 1997-05-06 Eliyahou Harari Flash eeprom memory system and its usage method

Also Published As

Publication number Publication date
FR2430064B1 (en) 1985-10-18
GB2029145A (en) 1980-03-12
DE2828836C2 (en) 1983-01-05
GB2029145B (en) 1982-06-16
DE2828836A1 (en) 1980-01-03
FR2430064A1 (en) 1980-01-25
JPH0146949B2 (en) 1989-10-11

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