SE8003730L - Vmos/bipoler dubbelriggad omkopplare - Google Patents

Vmos/bipoler dubbelriggad omkopplare

Info

Publication number
SE8003730L
SE8003730L SE8003730A SE8003730A SE8003730L SE 8003730 L SE8003730 L SE 8003730L SE 8003730 A SE8003730 A SE 8003730A SE 8003730 A SE8003730 A SE 8003730A SE 8003730 L SE8003730 L SE 8003730L
Authority
SE
Sweden
Prior art keywords
bipolar transistor
transistor
vmos
current
turned
Prior art date
Application number
SE8003730A
Other languages
English (en)
Swedish (sv)
Inventor
R H Baker
Original Assignee
Exxon Research Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exxon Research Engineering Co filed Critical Exxon Research Engineering Co
Publication of SE8003730L publication Critical patent/SE8003730L/

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/0422—Anti-saturation measures
SE8003730A 1979-05-21 1980-05-19 Vmos/bipoler dubbelriggad omkopplare SE8003730L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/040,989 US4286175A (en) 1979-05-21 1979-05-21 VMOS/Bipolar dual-triggered switch

Publications (1)

Publication Number Publication Date
SE8003730L true SE8003730L (sv) 1981-01-09

Family

ID=21914108

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8003730A SE8003730L (sv) 1979-05-21 1980-05-19 Vmos/bipoler dubbelriggad omkopplare

Country Status (7)

Country Link
US (1) US4286175A ( )
JP (1) JPS55154826A ( )
CA (1) CA1141823A ( )
DE (1) DE3019262A1 ( )
FR (1) FR2457591A1 ( )
GB (1) GB2050736B ( )
SE (1) SE8003730L ( )

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3108385C2 (de) * 1981-03-05 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Ansteuerung eines Leistungs-Feldeffekt-Schalttransistors und Schaltungsanordnungen zur Durchführung des Verfahrens
FR2505102B1 (fr) * 1981-04-29 1986-01-24 Radiotechnique Compelec Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree
JPS57186833A (en) * 1981-05-13 1982-11-17 Hitachi Ltd Switching element
JPS58526U (ja) * 1981-06-26 1983-01-05 スタンレー電気株式会社 スイツチング用トランジスタ回路装置
JPS58111434A (ja) * 1981-12-24 1983-07-02 Mitsubishi Electric Corp 高速スイツチ回路
US4480201A (en) * 1982-06-21 1984-10-30 Eaton Corporation Dual mode power transistor
JPS5979641A (ja) * 1982-10-29 1984-05-08 Hitachi Ltd 半導体集積回路装置
JPH0693626B2 (ja) * 1983-07-25 1994-11-16 株式会社日立製作所 半導体集積回路装置
US4609832A (en) * 1983-10-14 1986-09-02 Sundstrand Corporation Incremental base drive circuit for a power transistor
FR2564263B1 (fr) * 1984-05-11 1986-09-19 Radiotechnique Compelec Relais statique pour courant continu basse tension
DE3617610A1 (de) * 1986-05-24 1987-11-26 Licentia Gmbh Halbleiterleistungsschalter-anordnung
US4823070A (en) 1986-11-18 1989-04-18 Linear Technology Corporation Switching voltage regulator circuit
DE3709383A1 (de) * 1987-03-21 1988-09-29 Licentia Gmbh Einrichtung zur ansteuerung von transistorschaltern in darlington-anordnung
JPS6481520A (en) * 1987-09-24 1989-03-27 Toshiba Corp Darlington circuit
JPH0611112B2 (ja) * 1987-11-28 1994-02-09 株式会社東芝 出力回路
DE3824694A1 (de) * 1988-07-20 1990-02-01 Fraunhofer Ges Forschung Halbleiterschaltung fuer schnelle schaltvorgaenge
JPH0666676B2 (ja) * 1988-08-08 1994-08-24 株式会社日立製作所 半導体集積回路装置
JPH0683057B2 (ja) * 1988-08-08 1994-10-19 株式会社日立製作所 半導体集積回路装置
GB2235102A (en) * 1989-07-21 1991-02-20 Univ Lancaster Switching circuit
JP2606642Y2 (ja) * 1991-05-14 2000-12-18 株式会社ミツバ 突入電流抑制回路
JPH0752834B2 (ja) * 1992-04-17 1995-06-05 株式会社日立製作所 半導体集積回路装置
US5502610A (en) * 1993-09-02 1996-03-26 Micrel, Inc. Switching regulator having high current prevention features
US6563724B2 (en) * 2001-10-03 2003-05-13 Bruce W. Carsten Apparatus and method for turning off BJT used as synchronous rectifier
US7907380B2 (en) * 2008-04-25 2011-03-15 Lockheed Martin Corporation High power integrating power conditioner
RU169929U1 (ru) * 2016-09-19 2017-04-06 федеральное государственное автономное образовательное учреждение высшего образования "Южный федеральный университет" (Южный федеральный университет) Аналоговый электронный ключ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3210561A (en) * 1961-05-03 1965-10-05 Sylvania Electric Prod Compound transistor circuits
US3553541A (en) * 1969-04-17 1971-01-05 Bell Telephone Labor Inc Bilateral switch using combination of field effect transistors and bipolar transistors
US3879619A (en) * 1973-06-26 1975-04-22 Ibm Mosbip switching circuit
DE2555168C2 (de) * 1975-12-08 1982-04-29 Nixdorf Computer Ag, 4790 Paderborn Schaltungsanordnung für einen Schalttransistor
JPS5330865A (en) * 1976-09-03 1978-03-23 Hitachi Ltd Electron microscope provided with sample irradiating electron beam quantity measuring unit

Also Published As

Publication number Publication date
DE3019262A1 (de) 1980-12-04
JPS55154826A (en) 1980-12-02
GB2050736A (en) 1981-01-07
US4286175A (en) 1981-08-25
CA1141823A (en) 1983-02-22
FR2457591A1 (fr) 1980-12-19
GB2050736B (en) 1983-04-20

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