JPS55117467A - Semiconductor for controlling dc power supply - Google Patents

Semiconductor for controlling dc power supply

Info

Publication number
JPS55117467A
JPS55117467A JP350179A JP350179A JPS55117467A JP S55117467 A JPS55117467 A JP S55117467A JP 350179 A JP350179 A JP 350179A JP 350179 A JP350179 A JP 350179A JP S55117467 A JPS55117467 A JP S55117467A
Authority
JP
Japan
Prior art keywords
current
base
voltage
gate
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP350179A
Other languages
Japanese (ja)
Inventor
Manabu Yabuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP350179A priority Critical patent/JPS55117467A/en
Publication of JPS55117467A publication Critical patent/JPS55117467A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Power Conversion In General (AREA)

Abstract

PURPOSE:To perform switching control of a connected thyristor independently by using a junction capacity of a transistor. CONSTITUTION:Positive-output voltage and current are supplied to a collector C, negative-output voltage and current are supplied to a cathode K, and a specified amount of base voltage and current are applied to a base B and also to a gate G via a gate circuit 9. The gate circuit 9 receives the voltage and current from the base B, transforms the gate driving power to the magnitude of the controlled gate- driving voltage, and supplies it to the gate terminal G. The DC component of the positive and negative output voltage are cut out because a transistor 1 having a gain of hFE accompanied by storage capacity C1 is used. The base voltage and current and the collector current having a gain of hFE of the transistor 1 a companied by the base-leak current are applied to the anode of a thyristor 2 as an emitter current.
JP350179A 1979-01-13 1979-01-13 Semiconductor for controlling dc power supply Pending JPS55117467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP350179A JPS55117467A (en) 1979-01-13 1979-01-13 Semiconductor for controlling dc power supply

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP350179A JPS55117467A (en) 1979-01-13 1979-01-13 Semiconductor for controlling dc power supply

Publications (1)

Publication Number Publication Date
JPS55117467A true JPS55117467A (en) 1980-09-09

Family

ID=11559093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP350179A Pending JPS55117467A (en) 1979-01-13 1979-01-13 Semiconductor for controlling dc power supply

Country Status (1)

Country Link
JP (1) JPS55117467A (en)

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