JPS53124985A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53124985A
JPS53124985A JP3968577A JP3968577A JPS53124985A JP S53124985 A JPS53124985 A JP S53124985A JP 3968577 A JP3968577 A JP 3968577A JP 3968577 A JP3968577 A JP 3968577A JP S53124985 A JPS53124985 A JP S53124985A
Authority
JP
Japan
Prior art keywords
regions
semiconductor device
current
providing regions
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3968577A
Other languages
Japanese (ja)
Other versions
JPS6020905B2 (en
Inventor
Kazuyoshi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP3968577A priority Critical patent/JPS6020905B2/en
Publication of JPS53124985A publication Critical patent/JPS53124985A/en
Publication of JPS6020905B2 publication Critical patent/JPS6020905B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve current characteristics or switching characteristics of power transistors and expand safe operating regions by providing regions of high resistance to bonding ends where current or heats tends to concentrate, in proximately thereto, and providing regions of low resistance in portions where heat dissipation is good.
JP3968577A 1977-04-07 1977-04-07 semiconductor equipment Expired JPS6020905B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3968577A JPS6020905B2 (en) 1977-04-07 1977-04-07 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3968577A JPS6020905B2 (en) 1977-04-07 1977-04-07 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS53124985A true JPS53124985A (en) 1978-10-31
JPS6020905B2 JPS6020905B2 (en) 1985-05-24

Family

ID=12559917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3968577A Expired JPS6020905B2 (en) 1977-04-07 1977-04-07 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6020905B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5496161U (en) * 1977-12-19 1979-07-07
JPS56146271A (en) * 1980-04-16 1981-11-13 Nec Corp Semiconductor device
US4994880A (en) * 1986-10-31 1991-02-19 Nippondenso Co., Ltd. Semiconductor device constituting bipolar transistor
JP2010219454A (en) * 2009-03-19 2010-09-30 Sanken Electric Co Ltd Semiconductor device and method for manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5496161U (en) * 1977-12-19 1979-07-07
JPS56146271A (en) * 1980-04-16 1981-11-13 Nec Corp Semiconductor device
US4994880A (en) * 1986-10-31 1991-02-19 Nippondenso Co., Ltd. Semiconductor device constituting bipolar transistor
JP2010219454A (en) * 2009-03-19 2010-09-30 Sanken Electric Co Ltd Semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
JPS6020905B2 (en) 1985-05-24

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