SE7708385L - Halvledarkomponent - Google Patents

Halvledarkomponent

Info

Publication number
SE7708385L
SE7708385L SE7708385A SE7708385A SE7708385L SE 7708385 L SE7708385 L SE 7708385L SE 7708385 A SE7708385 A SE 7708385A SE 7708385 A SE7708385 A SE 7708385A SE 7708385 L SE7708385 L SE 7708385L
Authority
SE
Sweden
Prior art keywords
blocking
voltage
instabilities
protective layer
semiconductor components
Prior art date
Application number
SE7708385A
Other languages
Unknown language ( )
English (en)
Swedish (sv)
Inventor
J Krausse
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE7708385L publication Critical patent/SE7708385L/

Links

Classifications

    • H10W74/137—
    • H10P14/3411—
    • H10W74/481—
    • H10P14/6334—
    • H10P14/6923—
    • H10P14/6929—

Landscapes

  • Thyristors (AREA)
  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
SE7708385A 1976-07-20 1977-07-20 Halvledarkomponent SE7708385L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762632647 DE2632647A1 (de) 1976-07-20 1976-07-20 Halbleiterbauelement mit passivierender schutzschicht

Publications (1)

Publication Number Publication Date
SE7708385L true SE7708385L (sv) 1978-01-21

Family

ID=5983502

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7708385A SE7708385L (sv) 1976-07-20 1977-07-20 Halvledarkomponent

Country Status (10)

Country Link
JP (1) JPS5313878A (cs)
BR (1) BR7704739A (cs)
CA (1) CA1101127A (cs)
CH (1) CH614809A5 (cs)
CS (1) CS202576B2 (cs)
DE (1) DE2632647A1 (cs)
FR (1) FR2359510A1 (cs)
GB (1) GB1580654A (cs)
IT (1) IT1076447B (cs)
SE (1) SE7708385L (cs)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2730367A1 (de) * 1977-07-05 1979-01-18 Siemens Ag Verfahren zum passivieren von halbleiterelementen
CH661932A5 (en) * 1978-09-18 1987-08-31 Gen Electric Process for the preparation of a coating composition for semiconductor components, this composition, and the use thereof
JPS55115386A (en) * 1979-02-26 1980-09-05 Hitachi Ltd Semiconductor laser unit
DE2922005A1 (de) * 1979-05-30 1980-12-04 Siemens Ag Halbleiterbauelement mit passiviertem halbleiterkoerper
DE3021175A1 (de) * 1980-06-04 1981-12-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zum passivieren von siliciumbauelementen
DE3542166A1 (de) * 1985-11-29 1987-06-04 Telefunken Electronic Gmbh Halbleiterbauelement

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789258A (en) * 1955-06-29 1957-04-16 Raytheon Mfg Co Intrinsic coatings for semiconductor junctions
DE1184178B (de) * 1960-02-20 1964-12-23 Standard Elektrik Lorenz Ag Verfahren zum Stabilisieren der Oberflaeche von Halbleiterkoerpern mit pn-UEbergaengen durch Vakuumbedampfen
CH428947A (fr) * 1966-01-31 1967-01-31 Centre Electron Horloger Procédé de fabrication d'un circuit intégré
JPS6022497B2 (ja) * 1974-10-26 1985-06-03 ソニー株式会社 半導体装置

Also Published As

Publication number Publication date
CH614809A5 (en) 1979-12-14
BR7704739A (pt) 1978-04-18
JPS5313878A (en) 1978-02-07
IT1076447B (it) 1985-04-27
CS202576B2 (en) 1981-01-30
FR2359510B1 (cs) 1982-12-31
GB1580654A (en) 1980-12-03
DE2632647A1 (de) 1978-01-26
FR2359510A1 (fr) 1978-02-17
CA1101127A (en) 1981-05-12

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