GB1580654A - Semiconductor components - Google Patents

Semiconductor components Download PDF

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Publication number
GB1580654A
GB1580654A GB28661/77A GB2866177A GB1580654A GB 1580654 A GB1580654 A GB 1580654A GB 28661/77 A GB28661/77 A GB 28661/77A GB 2866177 A GB2866177 A GB 2866177A GB 1580654 A GB1580654 A GB 1580654A
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United Kingdom
Prior art keywords
silicon
semiconductor component
layer
vapour
semiconductor
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Expired
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GB28661/77A
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Siemens AG
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Siemens AG
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Publication date
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Publication of GB1580654A publication Critical patent/GB1580654A/en
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/298—Semiconductor material, e.g. amorphous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02145—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Instabilities of the reverse and forward blocking-state characteristics of thyristors and of the blocking-state voltage-current characteristics of diodes and transistors can be ascribed to changes in the properties of the passivating protective layers and/or the semiconductor surface. At that point, where the pn junction reaches the surface, a new protective layer (8) consisting of silicon is vapour-deposited. This makes it possible to eliminate the instabilities and to increase significantly the yield of usable semiconductor components. The passivating protective layer is designed, in particular, for semiconductor components having a high reverse voltage or blocking voltage. <IMAGE>

Description

(54) IMPROVEMENTS IN OR RELATING TO SEMICONDUCTOR COMPONENTS (71) We, SIEMENS AKTIENGESELLSCHAFT, a German Company of Berlin and Munich, German Federal Republic, do hereby declare the invention, for which we pray that a patent may be granted to us, and the method by which it is to be performed to be particularly described in and by the following statement: The present invention relates to semiconductor components having a semiconductor element which consists of silicon.
A basic problem with semiconductor components is keeping the current-voltage characteristic stable. In the case of rectifiers and transistors, the important characteristic is that in the blocking direction, whereas in the case of thyristors, the attention must be given to the stability of the characteristics in both the blocking and the triggering directions. It is already known to passivate the surfaces of the semiconductor elements of such semiconductor components by applying various organic or inorganic surface layers thereto. Lacquers, rubbers and glass have, for example, already been proposed for this purpose. Generally speaking, it is possible to achieve an adequate stability of the characteristic by the use of such surface layers. However, on occasion instabilities have been found to occur, the causes of which may be found in unrecognised changes in the properties of the surface layers and/or of the surface of the semiconductor element. In the past, this has frequently led to heavy fluctuations in the yield of serviceable semiconductor components.
It has already been proposed to passivate a semiconductor element by thermally growing a silicon layer thereof, the silicon being produced by chemical reaction at the heated surface of the element. However this passivation process is extremely timeconsuming and complicated and, in addition, necessitates the use of temperatures of between 600 and 700"C, which rules out its use for components which have already been contacted, and possibly soldered. It is also necessary to etch away the silicon layer at those areas at which it is not required.
It is an object of the present invention to provide a semiconductor component having a semiconductor element provided with a passivating silicon surface layer with which a substantially stable current-voltage characteristic can be achieved at a basically low cost.
According to the invention, there is provided a semiconductor component comprising a semiconductor element made of silicon and having at least one p-n junction therein which cuts the surface of the element, at least the part of said surface where the or each p-n junction cuts it being covered with a passivating layer of vapour-deposited silicon which has been produced by the condensation on said surface of gaseous silicon produced by the vaporisation of solid silicon under vacuum, and which layer contains a reactive gas.
The vapour-deposited silicon layer may consist of at least two sub-layers, each of a different granule size. In addition to a reactive gas such as oxygen, the vapourdeposited silicon layer may also contain one or more dopants, and/or metals. Preferably, the thickness of the vapour-deposited silicon layer is at least 0.1 um. In order to increase the dielectric spark-over resistance, the vapour-deposited silicon layer may be provided with a further protective layer.
The invention will now be further described with reference to the drawing, in which: Figure 1 is a schematic side-sectional view of a thyristor in accordance with the invention; and Figure 2 is a schematic side-sectional view of part of a thyristor similar to that shown in Figure 1 to illustrate operation of the component.
Referring to Figure 1, a thyristor has a semiconductor element having four zones, a cathode-side emitter zone 1, a cathode-side base zone 2, an inner base zone 3, and an anode-side emitter zone 4. P-n junctions 5, 6 and 7 are located between the zones 1 and 2, 2 and 3, and 3 and 4 respectively. The semiconductor element consists of silicon, and the zones 1, 2, 3 and 4 are doped in the usual manner in accordance with the purpose for which the semiconductor component is to be used.
A protective layer 8 which consists of vapour-deposited silicon produced by the condensation on the surface of silicon vapour produced by the vaporisation of silicon under vacuum, is arranged on the peripheral surface of the semiconductor element. This protective layer has a thickness of 0.1 llm. It may, however, be thicker, for example, it may have a thickness of 1 llm. In order to increase the dielectric spark-over resistance, a further protective layer 9, which may consist, for example, of standard rubber or of a protective lacquer, is arranged on the vapour-deposited silicon layer 8.
At least one reactive gas, such as, for example, oxygen is incorporated in the silicon layer. The silicon layer 8 may also contain one or more dopants, such as for example, boron or phosphorus. The layer 8 may also contain one or more metals, such as, for example, aluminium. These additives serve to influence the specific resistance and conductivity type of the layer 8. By changing the specific resistance, it is possible to adjust the potential conditions at the peripheral surface of the semiconductor element. The layer 8 may be doped, for example, with phosphorus, and may have a specific resistance of, for example, 106 Ohm cm.
As already mentioned, the thickness of the layer 8 may be between 0.1 and 1 Fm.
This layer has been vapour-deposited using a conventional vacuum-vapour-deposition system at a pressure of 5 x 10-6 torr. A silicon block may for example be used as the silicon source. The energy source used to vaporise the silicon may, for example, be an electron beam. Using an electron beam at an acceleration voltage of 8 kV and a current of about 0.5 amps, a vapourdeposition rate of 0.25 Fm/min can be achieved. The vapour-deposition rate can be increased, for example, to 0.5 llm/min by increasing the electron current and/or by increasing its energy. It is also possible to construct the layer 8 of a plurality of sub-layers having different granule sizes. In this way, it is possible to achieve a change in the specific resistance within the thickness of the layer 8, and thus to influence the potential conditions at the peripheral surface of the semiconductor element. Sublayers of different granule size can be produced, for example, by using different growth rates for the deposited silicon.
An essential advantage of using a vapour deposited silicon layer is that the substrate, i.e. the semiconductor element, can remain cold during the vapour-deposition. Even with other methods of vaporisation, for example, using radiation heat, the semiconductor element can be maintained at room temperature, for example.
Semiconductor elements which have been provided with a passivation layer made of vapour-deposited silicon, exhibit a surprisingly good current-voltage characteristic stability. This applies both to the characteristic in the blocking direction in the case of diodes and transistors, and also to the characteristics in both the blocking and triggering directions, in the case of thyristors. This may be established, for example, by using known photoelectric methods to investigate the space-charge zones at the periphery of a semi-conductor element.
Figure 2 illustrates the form of the spacecharge zone 10 in a conventional thyristor without a layer 8 when the p-n junction 7 is biased in the blocking direction. At the start of the blocking biasing, the boundaries 11, 12 of the space-charge zone 10 run approximately parallel to the p-n junctions. If the blocking bias persists for a long period, the space-charge zone expands in that the boundary 12 of the space-charge zone 10 at the periphery of the semiconductor element shifts towards the p-n junction 6. At the same time, the boundary 11 of the spacecharge zone 10 moves in a direction away from the p-n junction 7, although only to a considerably lesser extent since the zone 4 is doped more strongly than is the zone 3. The expansion of the space-charge zone is indicated in broken lines in Figure 2. With an increasing expansion of the space-charge zone, the blocking current increases until, when the p-n junction 6 is reached at the periphery, so-called punch-through occurs, whereupon the p-n junction 6 loses its capacity for blocking. The expansion also takes place correspondingly at the p-n junctions 5 and 7, when the semiconductor element is biased with a voltage in the reverse direction, i.e. in the triggering direction.
It has been established that, when j vapour-deposited silicon layer is present, no expansion of the space-charge zone 10 takes place at the periphery of the element. This means that there is no increase in the blocking currents, that is to say, the characteristics remain stable. This also applies to biasing of the semiconductor element at the operating temperature.
Although the invention has been de scribed with particular reference to a thyristor, it can equally be used for diodes and transistors, and for other semiconductor components.
WHAT WE CLAIM IS: 1. A semiconductor component comprising a semiconductor element made of silicon and having at least one p-n junction therein which cuts the surface of the element, at least the part of said surface where the or each p-n junction cuts it being covered with a passivating layer of vapourdeposited silicon which has been produced by the condensation on said surface of gaseous silicon produced by the vaporisation of solid silicon under vacuum, and which layer contains a reactive gas.
2. A semiconductor component as claimed in Claim 1, wherein the vapourdeposited silicon layer consists of two or more sub-layers of different granule sizes.
3. A semiconductor component as claimed in Claim 1 or Claim 2, wherein said vapour-deposited silicon layer also contains one or more dopants.
4. A semiconductor component as claimed in any one of Claims 1 to 3 wherein said reactive gas is oxygen.
5. A semiconductor component as claimed in any one of the preceding Claims, wherein said vapour-deposited silicon layer also contains one or more metals.
6. A semiconductor component as claimed in any one of the preceding Claims, wherein the thickness of said vapourdeposited silicon layer is at least 0.1 llm.
7. A semiconductor component as claimed in any one of the preceding Claims, wherein a further protective layer is arranged on said vapour-deposited silicon layer.
8. A semiconductor component substantially as hereinbefore described with reference to and as shown in the drawing.
**WARNING** end of DESC field may overlap start of CLMS **.

Claims (8)

**WARNING** start of CLMS field may overlap end of DESC **. scribed with particular reference to a thyristor, it can equally be used for diodes and transistors, and for other semiconductor components. WHAT WE CLAIM IS:
1. A semiconductor component comprising a semiconductor element made of silicon and having at least one p-n junction therein which cuts the surface of the element, at least the part of said surface where the or each p-n junction cuts it being covered with a passivating layer of vapourdeposited silicon which has been produced by the condensation on said surface of gaseous silicon produced by the vaporisation of solid silicon under vacuum, and which layer contains a reactive gas.
2. A semiconductor component as claimed in Claim 1, wherein the vapourdeposited silicon layer consists of two or more sub-layers of different granule sizes.
3. A semiconductor component as claimed in Claim 1 or Claim 2, wherein said vapour-deposited silicon layer also contains one or more dopants.
4. A semiconductor component as claimed in any one of Claims 1 to 3 wherein said reactive gas is oxygen.
5. A semiconductor component as claimed in any one of the preceding Claims, wherein said vapour-deposited silicon layer also contains one or more metals.
6. A semiconductor component as claimed in any one of the preceding Claims, wherein the thickness of said vapourdeposited silicon layer is at least 0.1 llm.
7. A semiconductor component as claimed in any one of the preceding Claims, wherein a further protective layer is arranged on said vapour-deposited silicon layer.
8. A semiconductor component substantially as hereinbefore described with reference to and as shown in the drawing.
GB28661/77A 1976-07-20 1977-07-08 Semiconductor components Expired GB1580654A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762632647 DE2632647A1 (en) 1976-07-20 1976-07-20 SEMICONDUCTOR COMPONENT WITH PASSIVATING PROTECTIVE LAYER

Publications (1)

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GB1580654A true GB1580654A (en) 1980-12-03

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GB28661/77A Expired GB1580654A (en) 1976-07-20 1977-07-08 Semiconductor components

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JP (1) JPS5313878A (en)
BR (1) BR7704739A (en)
CA (1) CA1101127A (en)
CH (1) CH614809A5 (en)
CS (1) CS202576B2 (en)
DE (1) DE2632647A1 (en)
FR (1) FR2359510A1 (en)
GB (1) GB1580654A (en)
IT (1) IT1076447B (en)
SE (1) SE7708385L (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2730367A1 (en) * 1977-07-05 1979-01-18 Siemens Ag PROCESS FOR PASSIVATING SEMICONDUCTOR ELEMENTS
CH661932A5 (en) * 1978-09-18 1987-08-31 Gen Electric Process for the preparation of a coating composition for semiconductor components, this composition, and the use thereof
JPS55115386A (en) * 1979-02-26 1980-09-05 Hitachi Ltd Semiconductor laser unit
DE2922005A1 (en) * 1979-05-30 1980-12-04 Siemens Ag SEMICONDUCTOR COMPONENT WITH PASSIVATED SEMICONDUCTOR BODY
DE3021175A1 (en) * 1980-06-04 1981-12-10 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PASSIVATING SILICON COMPONENTS
DE3542166A1 (en) * 1985-11-29 1987-06-04 Telefunken Electronic Gmbh SEMICONDUCTOR COMPONENT

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789258A (en) * 1955-06-29 1957-04-16 Raytheon Mfg Co Intrinsic coatings for semiconductor junctions
DE1184178B (en) * 1960-02-20 1964-12-23 Standard Elektrik Lorenz Ag Process for stabilizing the surface of semiconductor bodies with pn junctions by vacuum evaporation
CH428947A (en) * 1966-01-31 1967-01-31 Centre Electron Horloger Manufacturing process of an integrated circuit
JPS6022497B2 (en) * 1974-10-26 1985-06-03 ソニー株式会社 semiconductor equipment

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Publication number Publication date
CA1101127A (en) 1981-05-12
BR7704739A (en) 1978-04-18
IT1076447B (en) 1985-04-27
CS202576B2 (en) 1981-01-30
CH614809A5 (en) 1979-12-14
DE2632647A1 (en) 1978-01-26
FR2359510A1 (en) 1978-02-17
FR2359510B1 (en) 1982-12-31
JPS5313878A (en) 1978-02-07
SE7708385L (en) 1978-01-21

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee