SE537101C2 - Halvledarkomponent och förfarande för utformning av en struktur i ett målsubstrat för tillverkning av en halvledarkomponent - Google Patents

Halvledarkomponent och förfarande för utformning av en struktur i ett målsubstrat för tillverkning av en halvledarkomponent Download PDF

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Publication number
SE537101C2
SE537101C2 SE1050298A SE1050298A SE537101C2 SE 537101 C2 SE537101 C2 SE 537101C2 SE 1050298 A SE1050298 A SE 1050298A SE 1050298 A SE1050298 A SE 1050298A SE 537101 C2 SE537101 C2 SE 537101C2
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Sweden
Prior art keywords
target substrate
masking layer
profile
etching
layer
Prior art date
Application number
SE1050298A
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English (en)
Swedish (sv)
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SE1050298A1 (sv
Inventor
Krister Gumaelius
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Fairchild Semiconductor
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Filing date
Publication date
Application filed by Fairchild Semiconductor filed Critical Fairchild Semiconductor
Priority to SE1050298A priority Critical patent/SE537101C2/sv
Priority to PCT/EP2011/054850 priority patent/WO2011120979A1/en
Priority to KR1020127028454A priority patent/KR20130030258A/ko
Priority to EP11712516.1A priority patent/EP2553715B1/de
Priority to CN2011800266048A priority patent/CN103026459A/zh
Publication of SE1050298A1 publication Critical patent/SE1050298A1/sv
Priority to US13/629,174 priority patent/US8748943B2/en
Publication of SE537101C2 publication Critical patent/SE537101C2/sv

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
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    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
SE1050298A 2010-03-30 2010-03-30 Halvledarkomponent och förfarande för utformning av en struktur i ett målsubstrat för tillverkning av en halvledarkomponent SE537101C2 (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SE1050298A SE537101C2 (sv) 2010-03-30 2010-03-30 Halvledarkomponent och förfarande för utformning av en struktur i ett målsubstrat för tillverkning av en halvledarkomponent
PCT/EP2011/054850 WO2011120979A1 (en) 2010-03-30 2011-03-29 Semiconductor device and method of forming a structure in a target substrate for manufacturing a semiconductor device
KR1020127028454A KR20130030258A (ko) 2010-03-30 2011-03-29 반도체 장치 및 반도체 장치의 제조를 위하여 타겟 기판 내에 구조물을 형성하는 방법
EP11712516.1A EP2553715B1 (de) 2010-03-30 2011-03-29 Halbleiterbauelement und verfahren zur formung einer treppenstruktur in einem zielsubstrat zur herstellung eines halbleiterbauelements
CN2011800266048A CN103026459A (zh) 2010-03-30 2011-03-29 半导体装置和在目标基板中形成结构以制造半导体装置的方法
US13/629,174 US8748943B2 (en) 2010-03-30 2012-09-27 Bipolar junction transistor with stair profile

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE1050298A SE537101C2 (sv) 2010-03-30 2010-03-30 Halvledarkomponent och förfarande för utformning av en struktur i ett målsubstrat för tillverkning av en halvledarkomponent

Publications (2)

Publication Number Publication Date
SE1050298A1 SE1050298A1 (sv) 2011-10-01
SE537101C2 true SE537101C2 (sv) 2015-01-07

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SE1050298A SE537101C2 (sv) 2010-03-30 2010-03-30 Halvledarkomponent och förfarande för utformning av en struktur i ett målsubstrat för tillverkning av en halvledarkomponent

Country Status (6)

Country Link
US (1) US8748943B2 (de)
EP (1) EP2553715B1 (de)
KR (1) KR20130030258A (de)
CN (1) CN103026459A (de)
SE (1) SE537101C2 (de)
WO (1) WO2011120979A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9337268B2 (en) * 2011-05-16 2016-05-10 Cree, Inc. SiC devices with high blocking voltage terminated by a negative bevel
US9349797B2 (en) 2011-05-16 2016-05-24 Cree, Inc. SiC devices with high blocking voltage terminated by a negative bevel
EP2761660B1 (de) 2012-01-18 2017-09-27 Fairchild Semiconductor Corporation Bipolartransistor mit abstandhalterschicht und herstellungsverfahren dafür
JP6335795B2 (ja) 2012-02-06 2018-05-30 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 負ベベルにより終端した、高い阻止電圧を有するＳｉＣ素子
US9240359B2 (en) 2013-07-08 2016-01-19 Applied Materials, Inc. 3D NAND staircase CD control by using interferometric endpoint detection
JP2015032665A (ja) * 2013-08-01 2015-02-16 住友電気工業株式会社 ワイドバンドギャップ半導体装置
US9425265B2 (en) 2013-08-16 2016-08-23 Cree, Inc. Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure
US9601348B2 (en) * 2014-03-13 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure and method of forming same
US9299580B2 (en) 2014-08-19 2016-03-29 Applied Materials, Inc. High aspect ratio plasma etch for 3D NAND semiconductor applications
EP3222759A4 (de) * 2014-11-18 2018-05-30 Kwansei Gakuin Educational Foundation Oberflächenbehandlungsverfahren für sic-substrat
US9496250B2 (en) * 2014-12-08 2016-11-15 Globalfoundries Inc. Tunable scaling of current gain in bipolar junction transistors
US20220165888A1 (en) * 2018-10-09 2022-05-26 National Technology & Engineering Solutions Of Sandia, Llc High Voltage Gallium Nitride Vertical PN Diode
US12087572B2 (en) * 2019-03-28 2024-09-10 Lam Research Corporation Etch stop layer
CN111029373A (zh) * 2019-11-18 2020-04-17 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法
CN113161236A (zh) * 2021-03-12 2021-07-23 武汉高芯科技有限公司 一种薄膜刻蚀方法
CN114334621B (zh) * 2022-01-04 2023-08-11 广东芯粤能半导体有限公司 半导体结构、半导体器件及其制备方法
US20240006491A1 (en) * 2022-06-29 2024-01-04 Globalfoundries U.S. Inc. Bipolar transistor with stepped emitter

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3878008A (en) 1974-02-25 1975-04-15 Us Navy Method of forming high reliability mesa diode
DE3879471T2 (de) * 1988-04-21 1993-09-16 Ibm Verfahren zur herstellung eines photoresistmusters und apparat dafuer.
US4957875A (en) * 1988-08-01 1990-09-18 International Business Machines Corporation Vertical bipolar transistor
US5236547A (en) * 1990-09-25 1993-08-17 Kabushiki Kaisha Toshiba Method of forming a pattern in semiconductor device manufacturing process
US5281500A (en) * 1991-09-04 1994-01-25 Micron Technology, Inc. Method of preventing null formation in phase shifted photomasks
US5967795A (en) * 1995-08-30 1999-10-19 Asea Brown Boveri Ab SiC semiconductor device comprising a pn junction with a voltage absorbing edge
JP2001510636A (ja) 1997-02-03 2001-07-31 ザ ウィタカー コーポレーション ヘテロジャンクションバイポーラトランジスタにおける不動化棚を製造する自己整合方法
US5895269A (en) 1997-12-18 1999-04-20 Advanced Micro Devices, Inc. Methods for preventing deleterious punch-through during local interconnect formation
US6562251B1 (en) 2000-07-26 2003-05-13 Aiwa Co., Ltd. Chemical-mechanical contouring (CMC) method for forming a contoured surface using a stair-step etch
JP2008192857A (ja) 2007-02-05 2008-08-21 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
SE532625C2 (sv) * 2007-04-11 2010-03-09 Transic Ab Halvledarkomponent i kiselkarbid
TW200843105A (en) 2007-04-25 2008-11-01 Promos Technologies Inc Vertical transistor and method for preparing the same
US8652763B2 (en) 2007-07-16 2014-02-18 The Board Of Trustees Of The University Of Illinois Method for fabricating dual damascene profiles using sub pixel-voting lithography and devices made by same
JP5372002B2 (ja) 2007-11-09 2013-12-18 クリー インコーポレイテッド メサ構造とメサ段差を含むバッファ層とを備えた電力半導体デバイス
JP5377940B2 (ja) 2007-12-03 2013-12-25 株式会社半導体エネルギー研究所 半導体装置
US8003522B2 (en) * 2007-12-19 2011-08-23 Fairchild Semiconductor Corporation Method for forming trenches with wide upper portion and narrow lower portion
US7759186B2 (en) * 2008-09-03 2010-07-20 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices

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US8748943B2 (en) 2014-06-10
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US20130020611A1 (en) 2013-01-24
CN103026459A (zh) 2013-04-03
EP2553715A1 (de) 2013-02-06
WO2011120979A1 (en) 2011-10-06
EP2553715B1 (de) 2015-07-15

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