SE470116B - Detektorkrets med en som detektor arbetande halvledardiod och en med dioden integrerad förstärkarkrets - Google Patents
Detektorkrets med en som detektor arbetande halvledardiod och en med dioden integrerad förstärkarkretsInfo
- Publication number
- SE470116B SE470116B SE9201062A SE9201062A SE470116B SE 470116 B SE470116 B SE 470116B SE 9201062 A SE9201062 A SE 9201062A SE 9201062 A SE9201062 A SE 9201062A SE 470116 B SE470116 B SE 470116B
- Authority
- SE
- Sweden
- Prior art keywords
- diode
- detector
- detector circuit
- layer
- amplifier
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 239000010410 layer Substances 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 239000011241 protective layer Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9201062A SE470116B (sv) | 1992-04-03 | 1992-04-03 | Detektorkrets med en som detektor arbetande halvledardiod och en med dioden integrerad förstärkarkrets |
| US08/313,078 US5519247A (en) | 1992-04-03 | 1993-04-01 | Detector circuit with a semiconductor diode operating as a detector and with an amplifier circuit integrated with the diode |
| JP5517375A JPH07505502A (ja) | 1992-04-03 | 1993-04-01 | 検出器として動作する半導体ダイオードと該ダイオードに集積された増幅器回路を備えた検出器回路 |
| EP93908249A EP0634054A1 (en) | 1992-04-03 | 1993-04-01 | Detector circuit with a semiconductor diode operating as a detector and with an amplifier circuit integrated with the diode |
| PCT/SE1993/000278 WO1993020588A1 (en) | 1992-04-03 | 1993-04-01 | Detector circuit with a semiconductor diode operating as a detector and with an amplifier circuit integrated with the diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9201062A SE470116B (sv) | 1992-04-03 | 1992-04-03 | Detektorkrets med en som detektor arbetande halvledardiod och en med dioden integrerad förstärkarkrets |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE9201062D0 SE9201062D0 (sv) | 1992-04-03 |
| SE9201062L SE9201062L (sv) | 1993-10-04 |
| SE470116B true SE470116B (sv) | 1993-11-08 |
Family
ID=20385852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9201062A SE470116B (sv) | 1992-04-03 | 1992-04-03 | Detektorkrets med en som detektor arbetande halvledardiod och en med dioden integrerad förstärkarkrets |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5519247A (ja) |
| EP (1) | EP0634054A1 (ja) |
| JP (1) | JPH07505502A (ja) |
| SE (1) | SE470116B (ja) |
| WO (1) | WO1993020588A1 (ja) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994028582A1 (en) * | 1993-06-01 | 1994-12-08 | The University Of North Carolina | Integrated circuit including complementary field effect transistors and photodetector, and method of fabricating same |
| ES2117939B1 (es) * | 1996-01-24 | 1999-03-16 | Univ Madrid Politecnica | Sistema sensor autoalimentado fotovoltaicamente e integrado para telemedida de parametros fisicos y quimicos a traves de canales opticos. |
| US5708392A (en) * | 1996-02-16 | 1998-01-13 | Maxim Integrated Products, Inc. | Method and apparatus for providing limiting transimpedance amplification |
| US6111305A (en) * | 1997-10-09 | 2000-08-29 | Nippon Telegraph And Telephone Corporation | P-I-N semiconductor photodetector |
| US5969561A (en) * | 1998-03-05 | 1999-10-19 | Diablo Research Company, Llc | Integrated circuit having a variable RF resistor |
| DE19917950A1 (de) * | 1999-04-21 | 2000-10-26 | Heidenhain Gmbh Dr Johannes | Integrierter optoelektronischer Dünnschichtsensor und Verfahren zu dessen Herstellung |
| JP3467013B2 (ja) | 1999-12-06 | 2003-11-17 | キヤノン株式会社 | 固体撮像装置 |
| WO2001075977A1 (fr) * | 2000-04-04 | 2001-10-11 | Hamamatsu Photonics K.K. | Detecteur d'energie a semi-conducteur |
| US6960817B2 (en) * | 2000-04-21 | 2005-11-01 | Canon Kabushiki Kaisha | Solid-state imaging device |
| US6323054B1 (en) * | 2000-05-31 | 2001-11-27 | Taiwan Semiconductor Manufacturing Company | Lateral P-I-N photodiode element with high quantum efficiency for a CMOS image sensor |
| US6861341B2 (en) * | 2002-02-22 | 2005-03-01 | Xerox Corporation | Systems and methods for integration of heterogeneous circuit devices |
| JP5966592B2 (ja) * | 2012-05-15 | 2016-08-10 | オムロン株式会社 | 光電センサ |
| EP2713409B1 (en) * | 2012-09-27 | 2020-08-26 | ams AG | Photodiode with a field electrode for reducing the space charge region |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4455351A (en) * | 1983-06-13 | 1984-06-19 | At&T Bell Laboratories | Preparation of photodiodes |
| US4528418A (en) * | 1984-02-24 | 1985-07-09 | Energy Conversion Devices, Inc. | Photoresponsive semiconductor device having a double layer anti-reflective coating |
| JPS6161457A (ja) * | 1984-09-01 | 1986-03-29 | Canon Inc | 光センサおよびその製造方法 |
| JPS62109376A (ja) * | 1985-11-08 | 1987-05-20 | Nissan Motor Co Ltd | 受光用半導体装置 |
| US5162887A (en) * | 1988-10-31 | 1992-11-10 | Texas Instruments Incorporated | Buried junction photodiode |
| GB2228616B (en) * | 1989-02-22 | 1992-11-04 | Stc Plc | Opto-electronic device |
| NL8901401A (nl) * | 1989-06-02 | 1991-01-02 | Philips Nv | Fotogevoelige halfgeleiderinrichting. |
| JP3038772B2 (ja) * | 1990-03-29 | 2000-05-08 | ソニー株式会社 | 赤外線センサ |
| US5239193A (en) * | 1990-04-02 | 1993-08-24 | At&T Bell Laboratories | Silicon photodiode for monolithic integrated circuits |
| EP0579045B1 (de) * | 1992-07-16 | 1995-02-22 | Landis & Gyr Technology Innovation AG | Anordnung mit einer integrierten farbselektiven Photodiode und einem der Photodiode nachgeschalteten Verstärker |
-
1992
- 1992-04-03 SE SE9201062A patent/SE470116B/sv not_active IP Right Cessation
-
1993
- 1993-04-01 JP JP5517375A patent/JPH07505502A/ja active Pending
- 1993-04-01 EP EP93908249A patent/EP0634054A1/en not_active Withdrawn
- 1993-04-01 US US08/313,078 patent/US5519247A/en not_active Expired - Fee Related
- 1993-04-01 WO PCT/SE1993/000278 patent/WO1993020588A1/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| SE9201062L (sv) | 1993-10-04 |
| US5519247A (en) | 1996-05-21 |
| JPH07505502A (ja) | 1995-06-15 |
| SE9201062D0 (sv) | 1992-04-03 |
| WO1993020588A1 (en) | 1993-10-14 |
| EP0634054A1 (en) | 1995-01-18 |
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