SE9201062L - Detektorkrets med en som detektor arbetande halvledardiod och en med dioden integrerad förstärkarkrets - Google Patents

Detektorkrets med en som detektor arbetande halvledardiod och en med dioden integrerad förstärkarkrets

Info

Publication number
SE9201062L
SE9201062L SE9201062A SE9201062A SE9201062L SE 9201062 L SE9201062 L SE 9201062L SE 9201062 A SE9201062 A SE 9201062A SE 9201062 A SE9201062 A SE 9201062A SE 9201062 L SE9201062 L SE 9201062L
Authority
SE
Sweden
Prior art keywords
diode
detector
amplifier circuit
pct
circuit
Prior art date
Application number
SE9201062A
Other languages
Unknown language ( )
English (en)
Other versions
SE470116B (sv
SE9201062D0 (sv
Inventor
Richard Arbus
Kjell Bohlin
Paul Stephansson
Jonas Tiren
Original Assignee
Asea Brown Boveri
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri filed Critical Asea Brown Boveri
Priority to SE9201062A priority Critical patent/SE470116B/sv
Publication of SE9201062D0 publication Critical patent/SE9201062D0/sv
Priority to US08/313,078 priority patent/US5519247A/en
Priority to EP93908249A priority patent/EP0634054A1/en
Priority to JP5517375A priority patent/JPH07505502A/ja
Priority to PCT/SE1993/000278 priority patent/WO1993020588A1/en
Publication of SE9201062L publication Critical patent/SE9201062L/sv
Publication of SE470116B publication Critical patent/SE470116B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
SE9201062A 1992-04-03 1992-04-03 Detektorkrets med en som detektor arbetande halvledardiod och en med dioden integrerad förstärkarkrets SE470116B (sv)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SE9201062A SE470116B (sv) 1992-04-03 1992-04-03 Detektorkrets med en som detektor arbetande halvledardiod och en med dioden integrerad förstärkarkrets
US08/313,078 US5519247A (en) 1992-04-03 1993-04-01 Detector circuit with a semiconductor diode operating as a detector and with an amplifier circuit integrated with the diode
EP93908249A EP0634054A1 (en) 1992-04-03 1993-04-01 Detector circuit with a semiconductor diode operating as a detector and with an amplifier circuit integrated with the diode
JP5517375A JPH07505502A (ja) 1992-04-03 1993-04-01 検出器として動作する半導体ダイオードと該ダイオードに集積された増幅器回路を備えた検出器回路
PCT/SE1993/000278 WO1993020588A1 (en) 1992-04-03 1993-04-01 Detector circuit with a semiconductor diode operating as a detector and with an amplifier circuit integrated with the diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9201062A SE470116B (sv) 1992-04-03 1992-04-03 Detektorkrets med en som detektor arbetande halvledardiod och en med dioden integrerad förstärkarkrets

Publications (3)

Publication Number Publication Date
SE9201062D0 SE9201062D0 (sv) 1992-04-03
SE9201062L true SE9201062L (sv) 1993-10-04
SE470116B SE470116B (sv) 1993-11-08

Family

ID=20385852

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9201062A SE470116B (sv) 1992-04-03 1992-04-03 Detektorkrets med en som detektor arbetande halvledardiod och en med dioden integrerad förstärkarkrets

Country Status (5)

Country Link
US (1) US5519247A (sv)
EP (1) EP0634054A1 (sv)
JP (1) JPH07505502A (sv)
SE (1) SE470116B (sv)
WO (1) WO1993020588A1 (sv)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994028582A1 (en) * 1993-06-01 1994-12-08 The University Of North Carolina Integrated circuit including complementary field effect transistors and photodetector, and method of fabricating same
ES2117939B1 (es) * 1996-01-24 1999-03-16 Univ Madrid Politecnica Sistema sensor autoalimentado fotovoltaicamente e integrado para telemedida de parametros fisicos y quimicos a traves de canales opticos.
US5708392A (en) * 1996-02-16 1998-01-13 Maxim Integrated Products, Inc. Method and apparatus for providing limiting transimpedance amplification
US6111305A (en) * 1997-10-09 2000-08-29 Nippon Telegraph And Telephone Corporation P-I-N semiconductor photodetector
US5969561A (en) * 1998-03-05 1999-10-19 Diablo Research Company, Llc Integrated circuit having a variable RF resistor
DE19917950A1 (de) * 1999-04-21 2000-10-26 Heidenhain Gmbh Dr Johannes Integrierter optoelektronischer Dünnschichtsensor und Verfahren zu dessen Herstellung
JP3467013B2 (ja) 1999-12-06 2003-11-17 キヤノン株式会社 固体撮像装置
AU2001244586A1 (en) * 2000-04-04 2001-10-15 Hamamatsu Photonics K.K. Semiconductor energy detector
US6960817B2 (en) * 2000-04-21 2005-11-01 Canon Kabushiki Kaisha Solid-state imaging device
US6323054B1 (en) * 2000-05-31 2001-11-27 Taiwan Semiconductor Manufacturing Company Lateral P-I-N photodiode element with high quantum efficiency for a CMOS image sensor
US6861341B2 (en) * 2002-02-22 2005-03-01 Xerox Corporation Systems and methods for integration of heterogeneous circuit devices
JP5966592B2 (ja) * 2012-05-15 2016-08-10 オムロン株式会社 光電センサ
EP2713409B1 (en) * 2012-09-27 2020-08-26 ams AG Photodiode with a field electrode for reducing the space charge region

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4455351A (en) * 1983-06-13 1984-06-19 At&T Bell Laboratories Preparation of photodiodes
US4528418A (en) * 1984-02-24 1985-07-09 Energy Conversion Devices, Inc. Photoresponsive semiconductor device having a double layer anti-reflective coating
JPS6161457A (ja) * 1984-09-01 1986-03-29 Canon Inc 光センサおよびその製造方法
JPS62109376A (ja) * 1985-11-08 1987-05-20 Nissan Motor Co Ltd 受光用半導体装置
US5162887A (en) * 1988-10-31 1992-11-10 Texas Instruments Incorporated Buried junction photodiode
GB2228616B (en) * 1989-02-22 1992-11-04 Stc Plc Opto-electronic device
NL8901401A (nl) * 1989-06-02 1991-01-02 Philips Nv Fotogevoelige halfgeleiderinrichting.
JP3038772B2 (ja) * 1990-03-29 2000-05-08 ソニー株式会社 赤外線センサ
US5239193A (en) * 1990-04-02 1993-08-24 At&T Bell Laboratories Silicon photodiode for monolithic integrated circuits
DE59300087D1 (de) * 1992-07-16 1995-03-30 Landis & Gry Tech Innovat Ag Anordnung mit einer integrierten farbselektiven Photodiode und einem der Photodiode nachgeschalteten Verstärker.

Also Published As

Publication number Publication date
SE470116B (sv) 1993-11-08
SE9201062D0 (sv) 1992-04-03
EP0634054A1 (en) 1995-01-18
JPH07505502A (ja) 1995-06-15
US5519247A (en) 1996-05-21
WO1993020588A1 (en) 1993-10-14

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