DE69214777D1 - Monolithisch integrierter Mikrowellenverstärker mit hoher Verstärkung - Google Patents
Monolithisch integrierter Mikrowellenverstärker mit hoher VerstärkungInfo
- Publication number
- DE69214777D1 DE69214777D1 DE69214777T DE69214777T DE69214777D1 DE 69214777 D1 DE69214777 D1 DE 69214777D1 DE 69214777 T DE69214777 T DE 69214777T DE 69214777 T DE69214777 T DE 69214777T DE 69214777 D1 DE69214777 D1 DE 69214777D1
- Authority
- DE
- Germany
- Prior art keywords
- high gain
- monolithically integrated
- integrated high
- microwave amplifier
- gain microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/141—Analog devices
- H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
- H01L2924/30111—Impedance matching
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/784,260 US5166639A (en) | 1991-10-29 | 1991-10-29 | High gain mololithic microwave integrated circuit amplifier |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69214777D1 true DE69214777D1 (de) | 1996-11-28 |
DE69214777T2 DE69214777T2 (de) | 1997-02-20 |
Family
ID=25131866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69214777T Expired - Fee Related DE69214777T2 (de) | 1991-10-29 | 1992-06-08 | Monolithisch integrierter Mikrowellenverstärker mit hoher Verstärkung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5166639A (de) |
EP (1) | EP0544387B1 (de) |
JP (1) | JPH05251963A (de) |
DE (1) | DE69214777T2 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5264806A (en) * | 1992-05-26 | 1993-11-23 | Trw Inc. | Bipolar microwave monolithic amplifier with active feedback |
DE4240881C1 (de) * | 1992-12-04 | 1994-03-31 | Sel Alcatel Ag | Transistorverstärkerkaskade |
KR0160542B1 (ko) * | 1994-12-15 | 1999-02-01 | 정선종 | 모노리틱 마이크로 웨이브 집적회로용 기판 및 그 제조방법 |
US5578860A (en) * | 1995-05-01 | 1996-11-26 | Motorola, Inc. | Monolithic high frequency integrated circuit structure having a grounded source configuration |
US5568086A (en) * | 1995-05-25 | 1996-10-22 | Motorola, Inc. | Linear power amplifier for high efficiency multi-carrier performance |
US6026286A (en) * | 1995-08-24 | 2000-02-15 | Nortel Networks Corporation | RF amplifier, RF mixer and RF receiver |
JP3315851B2 (ja) * | 1995-12-19 | 2002-08-19 | シャープ株式会社 | 広帯域増幅回路を用いる高速通信素子 |
US5815113A (en) * | 1996-08-13 | 1998-09-29 | Trw Inc. | Monolithic, low-noise, synchronous direct detection receiver for passive microwave/millimeter-wave radiometric imaging systems |
DE19732437C1 (de) * | 1997-07-28 | 1998-12-24 | Siemens Ag | Transistor-Verstärkerstufe |
US5969575A (en) * | 1997-12-11 | 1999-10-19 | Alcatel | Class A/F amplifier having second and third order harmonic input and output filtering and self bias distortion correction |
US6275687B1 (en) * | 1998-11-30 | 2001-08-14 | Conexant Systems, Inc. | Apparatus and method for implementing a low-noise amplifier and mixer |
US20020093596A1 (en) * | 2001-01-18 | 2002-07-18 | Grasty William J. | Video amplifier circuits for multi-output distribution of video signals |
US6611172B1 (en) * | 2001-06-25 | 2003-08-26 | Sirenza Microdevices, Inc. | Thermally distributed darlington amplifier |
JP5133392B2 (ja) * | 2010-12-03 | 2013-01-30 | 三菱電機株式会社 | 高周波増幅器及び差動増幅器 |
US8461930B2 (en) | 2011-08-18 | 2013-06-11 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Monolithic microwave integrated circuit (MMIC) including air bridge coupler |
US8729962B2 (en) * | 2011-12-15 | 2014-05-20 | Qualcomm Incorporated | Millimeter wave power amplifier |
US9397621B2 (en) * | 2014-07-30 | 2016-07-19 | Eridan Communications, Inc. | Limiting driver for switch-mode power amplifier |
US9831840B2 (en) * | 2015-05-18 | 2017-11-28 | Texas Instruments Incorporated | Amplifier circuit and method for adaptive amplifier biasing |
CN111756336A (zh) * | 2020-07-22 | 2020-10-09 | 成都华光瑞芯微电子股份有限公司 | 一种改进达林顿结构宽带低噪声放大器 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3100876A (en) * | 1960-04-28 | 1963-08-13 | Hewlett Packard Co | Transistor amplifier having low output noise |
US3474349A (en) * | 1967-02-17 | 1969-10-21 | Us Navy | Fast acting electronic filter |
US3460050A (en) * | 1967-07-18 | 1969-08-05 | Westinghouse Electric Corp | Integrated circuit amplifier |
US4189681A (en) * | 1978-09-29 | 1980-02-19 | Neil Brown Instruments Systems, Inc. | Bandpass filter having low passband phase shift |
US4290027A (en) * | 1979-11-26 | 1981-09-15 | General Signal Corporation | Fail-safe active bandpass filter using a modified twin-T filter |
US4275453A (en) * | 1980-01-25 | 1981-06-23 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Smoothing filter for digital to analog conversion |
US4912430A (en) * | 1989-05-24 | 1990-03-27 | Avantek, Inc. | Current source as a microwave biasing element |
-
1991
- 1991-10-29 US US07/784,260 patent/US5166639A/en not_active Expired - Lifetime
-
1992
- 1992-06-08 DE DE69214777T patent/DE69214777T2/de not_active Expired - Fee Related
- 1992-06-08 EP EP92305210A patent/EP0544387B1/de not_active Expired - Lifetime
- 1992-06-12 JP JP4153196A patent/JPH05251963A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US5166639A (en) | 1992-11-24 |
JPH05251963A (ja) | 1993-09-28 |
EP0544387B1 (de) | 1996-10-23 |
EP0544387A1 (de) | 1993-06-02 |
DE69214777T2 (de) | 1997-02-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69214777T2 (de) | Monolithisch integrierter Mikrowellenverstärker mit hoher Verstärkung | |
DE69204483T2 (de) | Faserverstärker mit Verstärkungsstabilisierung. | |
DE69220145T2 (de) | Verstärker mit Verstärkungsregelung | |
DE69328834T2 (de) | Halbleiter HF-Verstärker mit hoher Ausgangsleistung | |
DE69306753D1 (de) | Verstärker mit programmierbaren Verstärkungsfaktor | |
DE59107736D1 (de) | Monolithisch integrierter Differenzverstärker mit digitaler Verstärkungseinstellung | |
DE69416074T2 (de) | Operationsverstärker mit vergrösserter Verstärkung | |
DE69318694D1 (de) | Verstärker mit einstellbarer verstärkung | |
DE69224409T2 (de) | Verstärkerschaltung | |
DE69219359T2 (de) | Transimpedanzverstärker | |
DE69413365D1 (de) | Verstärker mit einstellbarer Verstärkung | |
DE69113523T2 (de) | Emittergeerdete Verstärkerschaltung mit Vorspannungsschaltung. | |
DE69115622T2 (de) | Halbleiterlaser-Verstärker | |
DE69603935D1 (de) | Optischer Verstärker mit stabilisierter Verstärkung | |
DE69314981D1 (de) | Verstärkerschaltung | |
DE69222483T2 (de) | Mikrowellenleistungsverstärker | |
DE69206208D1 (de) | Verstärkerschaltung mit exponentieller verstärkungssteuerung. | |
DE69102440D1 (de) | Integrierter optischer Signalverstärker. | |
DE69112104D1 (de) | Verstärkerschaltung. | |
DE69215920D1 (de) | RF Verstärker System | |
DE69324215T2 (de) | HF-Verstärker mit linearer Verstärkungssteuerung | |
DE68924902T2 (de) | Miniaturkreuzfeldverstärker mit hoher verstärkung. | |
DE69111510T2 (de) | Verstärker mit variabler Verstärkung. | |
DE69215995D1 (de) | Verstärkerschaltung | |
DE69121928D1 (de) | Verstärkerschaltung mit Rückkopplungskreis |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |