SE0002389L - Transistoranordning samt framställningsförfarande därav - Google Patents

Transistoranordning samt framställningsförfarande därav

Info

Publication number
SE0002389L
SE0002389L SE0002389A SE0002389A SE0002389L SE 0002389 L SE0002389 L SE 0002389L SE 0002389 A SE0002389 A SE 0002389A SE 0002389 A SE0002389 A SE 0002389A SE 0002389 L SE0002389 L SE 0002389L
Authority
SE
Sweden
Prior art keywords
transistor
collector layer
doped
transistor device
layer
Prior art date
Application number
SE0002389A
Other languages
English (en)
Other versions
SE518710C2 (sv
SE0002389D0 (sv
Inventor
Hans Norstroem
Torkel Arnborg
Ted Johansson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE0002389A priority Critical patent/SE518710C2/sv
Publication of SE0002389D0 publication Critical patent/SE0002389D0/sv
Priority to TW089117381A priority patent/TW504842B/zh
Priority to PCT/SE2001/001385 priority patent/WO2002001623A1/en
Priority to JP2002505670A priority patent/JP2004502300A/ja
Priority to CNB01811833XA priority patent/CN1244142C/zh
Priority to EP01944020A priority patent/EP1303872B1/en
Priority to AU2001266469A priority patent/AU2001266469A1/en
Priority to KR1020027017546A priority patent/KR100770060B1/ko
Priority to US09/887,037 priority patent/US6579773B2/en
Publication of SE0002389L publication Critical patent/SE0002389L/sv
Publication of SE518710C2 publication Critical patent/SE518710C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
SE0002389A 2000-06-26 2000-06-26 Förfarande för att förbättra transistorprestanda samt transistoranordning och integrerad krets SE518710C2 (sv)

Priority Applications (9)

Application Number Priority Date Filing Date Title
SE0002389A SE518710C2 (sv) 2000-06-26 2000-06-26 Förfarande för att förbättra transistorprestanda samt transistoranordning och integrerad krets
TW089117381A TW504842B (en) 2000-06-26 2000-08-28 Transistor device and fabrication method thereof
KR1020027017546A KR100770060B1 (ko) 2000-06-26 2001-06-19 안티몬이 주입된 고주파 트랜지스터 장치 및 그 제조방법
CNB01811833XA CN1244142C (zh) 2000-06-26 2001-06-19 具有锑注入的高频晶体管器件及其制造方法
JP2002505670A JP2004502300A (ja) 2000-06-26 2001-06-19 アンチモニ注入による高周波トランジスタ装置及び製造方法
PCT/SE2001/001385 WO2002001623A1 (en) 2000-06-26 2001-06-19 High frequency transistor device with antimony implantation and fabrication method thereof
EP01944020A EP1303872B1 (en) 2000-06-26 2001-06-19 High frequency transistor device with antimony implantation and fabrication method thereof
AU2001266469A AU2001266469A1 (en) 2000-06-26 2001-06-19 High frequency transistor device with antimony implantation and fabrication method thereof
US09/887,037 US6579773B2 (en) 2000-06-26 2001-06-25 Transistor device and fabrication method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0002389A SE518710C2 (sv) 2000-06-26 2000-06-26 Förfarande för att förbättra transistorprestanda samt transistoranordning och integrerad krets

Publications (3)

Publication Number Publication Date
SE0002389D0 SE0002389D0 (sv) 2000-06-26
SE0002389L true SE0002389L (sv) 2001-12-27
SE518710C2 SE518710C2 (sv) 2002-11-12

Family

ID=20280241

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0002389A SE518710C2 (sv) 2000-06-26 2000-06-26 Förfarande för att förbättra transistorprestanda samt transistoranordning och integrerad krets

Country Status (9)

Country Link
US (1) US6579773B2 (sv)
EP (1) EP1303872B1 (sv)
JP (1) JP2004502300A (sv)
KR (1) KR100770060B1 (sv)
CN (1) CN1244142C (sv)
AU (1) AU2001266469A1 (sv)
SE (1) SE518710C2 (sv)
TW (1) TW504842B (sv)
WO (1) WO2002001623A1 (sv)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020177253A1 (en) * 2001-05-25 2002-11-28 International Business Machines Corporation Process for making a high voltage NPN Bipolar device with improved AC performance
US7038298B2 (en) 2003-06-24 2006-05-02 International Business Machines Corporation High fT and fmax bipolar transistor and method of making same
CN100433340C (zh) * 2003-12-31 2008-11-12 天津大学 与深亚微米射频工艺兼容的硅光电探测器
US9105677B2 (en) 2013-10-22 2015-08-11 International Business Machines Corporation Base profile of self-aligned bipolar transistors for power amplifier applications

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065677B2 (ja) * 1984-04-16 1994-01-19 ロ−ム株式会社 半導体装置の製造方法
JPS61161761A (ja) * 1985-01-10 1986-07-22 Nec Corp 半導体装置
US4669179A (en) * 1985-11-01 1987-06-02 Advanced Micro Devices, Inc. Integrated circuit fabrication process for forming a bipolar transistor having extrinsic base regions
JP2590236B2 (ja) * 1987-10-07 1997-03-12 株式会社日立製作所 半導体装置
JPH02234422A (ja) * 1989-03-08 1990-09-17 Sony Corp オートドーピング抑制方法
WO1993016494A1 (en) * 1992-01-31 1993-08-19 Analog Devices, Inc. Complementary bipolar polysilicon emitter devices
US5581115A (en) * 1994-10-07 1996-12-03 National Semiconductor Corporation Bipolar transistors using isolated selective doping to improve performance characteristics
US5719082A (en) * 1995-08-25 1998-02-17 Micron Technology, Inc. Angled implant to improve high current operation of bipolar transistors
DE19617030C2 (de) * 1996-04-27 1999-11-18 Daimler Chrysler Ag Si/SiGe-Heterobipolartransistor mit hochdotiertem SiGe-Spacer
JP3562611B2 (ja) * 1996-11-05 2004-09-08 ソニー株式会社 半導体装置及びその製造方法
KR100253340B1 (ko) * 1997-10-29 2000-04-15 김영환 모스 트랜지스터 제조방법
JP3727482B2 (ja) * 1998-06-05 2005-12-14 セイコーインスツル株式会社 半導体装置の製造方法
FR2779573B1 (fr) * 1998-06-05 2001-10-26 St Microelectronics Sa Transistor bipolaire vertical comportant une base extrinseque de rugosite reduite, et procede de fabrication
FR2779571B1 (fr) * 1998-06-05 2003-01-24 St Microelectronics Sa Procede de dopage selectif du collecteur intrinseque d'un transistor bipolaire vertical a base epitaxiee

Also Published As

Publication number Publication date
KR20030028490A (ko) 2003-04-08
SE518710C2 (sv) 2002-11-12
US20010055893A1 (en) 2001-12-27
TW504842B (en) 2002-10-01
WO2002001623A1 (en) 2002-01-03
EP1303872A1 (en) 2003-04-23
SE0002389D0 (sv) 2000-06-26
US6579773B2 (en) 2003-06-17
CN1244142C (zh) 2006-03-01
KR100770060B1 (ko) 2007-10-24
CN1439171A (zh) 2003-08-27
AU2001266469A1 (en) 2002-01-08
JP2004502300A (ja) 2004-01-22
EP1303872B1 (en) 2012-12-19

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