RU2646545C1 - Полупроводниковый резистор - Google Patents
Полупроводниковый резистор Download PDFInfo
- Publication number
- RU2646545C1 RU2646545C1 RU2016149196A RU2016149196A RU2646545C1 RU 2646545 C1 RU2646545 C1 RU 2646545C1 RU 2016149196 A RU2016149196 A RU 2016149196A RU 2016149196 A RU2016149196 A RU 2016149196A RU 2646545 C1 RU2646545 C1 RU 2646545C1
- Authority
- RU
- Russia
- Prior art keywords
- layer
- semiconductor
- semiconductor layer
- insulating layer
- resistor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 239000010410 layer Substances 0.000 claims abstract description 70
- YMLSSJKPHCSPIY-UHFFFAOYSA-N [Sm].S=O Chemical compound [Sm].S=O YMLSSJKPHCSPIY-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000011241 protective layer Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 3
- 150000002602 lanthanoids Chemical class 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 238000006731 degradation reaction Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 3
- KASDAGLLEDDKAA-UHFFFAOYSA-N [S--].[Sm++] Chemical compound [S--].[Sm++] KASDAGLLEDDKAA-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2016149196A RU2646545C1 (ru) | 2016-12-14 | 2016-12-14 | Полупроводниковый резистор |
| PCT/RU2016/000911 WO2018111137A1 (fr) | 2016-12-14 | 2016-12-22 | Résistance à semi-conducteurs |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2016149196A RU2646545C1 (ru) | 2016-12-14 | 2016-12-14 | Полупроводниковый резистор |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| RU2646545C1 true RU2646545C1 (ru) | 2018-03-05 |
Family
ID=61568844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2016149196A RU2646545C1 (ru) | 2016-12-14 | 2016-12-14 | Полупроводниковый резистор |
Country Status (2)
| Country | Link |
|---|---|
| RU (1) | RU2646545C1 (fr) |
| WO (1) | WO2018111137A1 (fr) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS621259A (ja) * | 1985-06-26 | 1987-01-07 | Sharp Corp | 半導体抵抗素子の形成方法 |
| RU2367062C1 (ru) * | 2008-05-15 | 2009-09-10 | Общество с ограниченной ответственностью "Сенсор" | Полупроводниковый резистор |
| RU2367061C1 (ru) * | 2008-05-15 | 2009-09-10 | Общество с ограниченной ответственностью "Сенсор" | Высокоточный тензодатчик |
| US20140159180A1 (en) * | 2012-12-06 | 2014-06-12 | Agency For Science, Technology And Research | Semiconductor resistor structure and semiconductor photomultiplier device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1101081A1 (ru) * | 1982-07-26 | 1994-05-15 | А.А. Кремнев | Полупроводниковый резистор с температурной компенсацией и способ его изготовления |
| JPS63266863A (ja) * | 1987-04-24 | 1988-11-02 | Hitachi Ltd | 半導体抵抗体 |
| KR0150122B1 (ko) * | 1995-05-31 | 1998-12-01 | 김광호 | 반도체 저항 소자 및 그 제조 방법 |
| KR102089505B1 (ko) * | 2011-09-23 | 2020-03-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
-
2016
- 2016-12-14 RU RU2016149196A patent/RU2646545C1/ru active
- 2016-12-22 WO PCT/RU2016/000911 patent/WO2018111137A1/fr active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS621259A (ja) * | 1985-06-26 | 1987-01-07 | Sharp Corp | 半導体抵抗素子の形成方法 |
| RU2367062C1 (ru) * | 2008-05-15 | 2009-09-10 | Общество с ограниченной ответственностью "Сенсор" | Полупроводниковый резистор |
| RU2367061C1 (ru) * | 2008-05-15 | 2009-09-10 | Общество с ограниченной ответственностью "Сенсор" | Высокоточный тензодатчик |
| US20140159180A1 (en) * | 2012-12-06 | 2014-06-12 | Agency For Science, Technology And Research | Semiconductor resistor structure and semiconductor photomultiplier device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018111137A1 (fr) | 2018-06-21 |
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