WO2018111137A1 - Résistance à semi-conducteurs - Google Patents
Résistance à semi-conducteurs Download PDFInfo
- Publication number
- WO2018111137A1 WO2018111137A1 PCT/RU2016/000911 RU2016000911W WO2018111137A1 WO 2018111137 A1 WO2018111137 A1 WO 2018111137A1 RU 2016000911 W RU2016000911 W RU 2016000911W WO 2018111137 A1 WO2018111137 A1 WO 2018111137A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- semiconductor
- buffer layer
- insulating layer
- resistor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 239000010410 layer Substances 0.000 claims abstract description 72
- YMLSSJKPHCSPIY-UHFFFAOYSA-N [Sm].S=O Chemical compound [Sm].S=O YMLSSJKPHCSPIY-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000011241 protective layer Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 3
- 150000002602 lanthanoids Chemical class 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 238000006731 degradation reaction Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 3
- KASDAGLLEDDKAA-UHFFFAOYSA-N [S--].[Sm++] Chemical compound [S--].[Sm++] KASDAGLLEDDKAA-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 101100389125 Rattus norvegicus Egln3 gene Proteins 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
L'invention concerne des équipements à base d'instruments à semi-conducteurs notamment la production de résistances thermiques et tensiométriques à base de matériaux semi-conducteurs tensiosensibles. La résistance comprend une couche d'isolation formée sur le substrat, une couche de semi-conducteur dotée à ses extrémités de contacts se présentant comme une couche de métal. La résistance est en outre munie par des couches tampon inférieure et supérieure. La couche tampon inférieure est disposée entre la couche d'isolation et la couche de semi-conducteur. La couche tampon supérieur est disposée sur une couche de semi-conducteur. Les couches tampon inférieure et supérieure sont recouvertes par une couche de protection extérieure. La structure obtenue est en outre recouverte d'une couche externe de protection. L'utilisation de l'invention permet de réduire au minimum la dégradation des paramètres d'un élément sensible résistant à base de matériaux semi-conducteurs tensiosensibles à des températures de fonctionnement plus élevées et assurer la stabilité de paramètres électriques.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2016149196 | 2016-12-14 | ||
| RU2016149196A RU2646545C1 (ru) | 2016-12-14 | 2016-12-14 | Полупроводниковый резистор |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2018111137A1 true WO2018111137A1 (fr) | 2018-06-21 |
Family
ID=61568844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/RU2016/000911 WO2018111137A1 (fr) | 2016-12-14 | 2016-12-22 | Résistance à semi-conducteurs |
Country Status (2)
| Country | Link |
|---|---|
| RU (1) | RU2646545C1 (fr) |
| WO (1) | WO2018111137A1 (fr) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63266863A (ja) * | 1987-04-24 | 1988-11-02 | Hitachi Ltd | 半導体抵抗体 |
| SU1101081A1 (ru) * | 1982-07-26 | 1994-05-15 | А.А. Кремнев | Полупроводниковый резистор с температурной компенсацией и способ его изготовления |
| KR0150122B1 (ko) * | 1995-05-31 | 1998-12-01 | 김광호 | 반도체 저항 소자 및 그 제조 방법 |
| RU2367062C1 (ru) * | 2008-05-15 | 2009-09-10 | Общество с ограниченной ответственностью "Сенсор" | Полупроводниковый резистор |
| WO2013042696A1 (fr) * | 2011-09-23 | 2013-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif à semi-conducteurs |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS621259A (ja) * | 1985-06-26 | 1987-01-07 | Sharp Corp | 半導体抵抗素子の形成方法 |
| RU2367061C1 (ru) * | 2008-05-15 | 2009-09-10 | Общество с ограниченной ответственностью "Сенсор" | Высокоточный тензодатчик |
| US20140159180A1 (en) * | 2012-12-06 | 2014-06-12 | Agency For Science, Technology And Research | Semiconductor resistor structure and semiconductor photomultiplier device |
-
2016
- 2016-12-14 RU RU2016149196A patent/RU2646545C1/ru active
- 2016-12-22 WO PCT/RU2016/000911 patent/WO2018111137A1/fr active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1101081A1 (ru) * | 1982-07-26 | 1994-05-15 | А.А. Кремнев | Полупроводниковый резистор с температурной компенсацией и способ его изготовления |
| JPS63266863A (ja) * | 1987-04-24 | 1988-11-02 | Hitachi Ltd | 半導体抵抗体 |
| KR0150122B1 (ko) * | 1995-05-31 | 1998-12-01 | 김광호 | 반도체 저항 소자 및 그 제조 방법 |
| RU2367062C1 (ru) * | 2008-05-15 | 2009-09-10 | Общество с ограниченной ответственностью "Сенсор" | Полупроводниковый резистор |
| WO2013042696A1 (fr) * | 2011-09-23 | 2013-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif à semi-conducteurs |
Also Published As
| Publication number | Publication date |
|---|---|
| RU2646545C1 (ru) | 2018-03-05 |
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