RU2638130C2 - Датчик для текучих сред с широким динамическим диапазоном на основе нанопроводной платформы - Google Patents

Датчик для текучих сред с широким динамическим диапазоном на основе нанопроводной платформы Download PDF

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RU2638130C2
RU2638130C2 RU2015118169A RU2015118169A RU2638130C2 RU 2638130 C2 RU2638130 C2 RU 2638130C2 RU 2015118169 A RU2015118169 A RU 2015118169A RU 2015118169 A RU2015118169 A RU 2015118169A RU 2638130 C2 RU2638130 C2 RU 2638130C2
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nanowires
nanowire
substance
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RU2015118169A
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RU2015118169A (ru
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Йохан Хендрик КЛОТВИЙК
Марсель МЮЛДЕР
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Конинклейке Филипс Н.В.
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004—Gaseous mixtures, e.g. polluted air
    • G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G01N33/0031—General constructional details of gas analysers, e.g. portable test equipment concerning the detector comprising two or more sensors, e.g. a sensor array
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Molecular Biology (AREA)
  • Nanotechnology (AREA)
  • Combustion & Propulsion (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Thin Film Transistor (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
RU2015118169A 2012-10-16 2013-10-07 Датчик для текучих сред с широким динамическим диапазоном на основе нанопроводной платформы RU2638130C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261714418P 2012-10-16 2012-10-16
US61/714,418 2012-10-16
PCT/IB2013/059160 WO2014060894A2 (en) 2012-10-16 2013-10-07 Wide dynamic range fluid sensor based on nanowire platform

Publications (2)

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RU2015118169A RU2015118169A (ru) 2016-12-10
RU2638130C2 true RU2638130C2 (ru) 2017-12-11

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RU2015118169A RU2638130C2 (ru) 2012-10-16 2013-10-07 Датчик для текучих сред с широким динамическим диапазоном на основе нанопроводной платформы

Country Status (8)

Country Link
US (1) US10126263B2 (enExample)
EP (1) EP2909617A2 (enExample)
JP (1) JP6533465B2 (enExample)
CN (1) CN104737009B (enExample)
BR (1) BR112015008202B1 (enExample)
MX (1) MX356580B (enExample)
RU (1) RU2638130C2 (enExample)
WO (1) WO2014060894A2 (enExample)

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RU2749070C1 (ru) * 2020-09-17 2021-06-03 Общество С Ограниченной Ответственностью "Крокус Наноэлектроника" (Ооо "Крокус Наноэлектроника") Способ формирования активных структур для микроэлектронных устройств и микроэлектронное устройство, содержащее активные структуры
RU2764722C1 (ru) * 2021-08-04 2022-01-19 Общество С Ограниченной Ответственностью "Крокус Наноэлектроника" (Ооо "Крокус Наноэлектроника") Способ формирования активных структур для микроэлектронных устройств на кремниевой подложке и микроэлектронное устройство, содержащее сформированные активные структуры

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CN105143859B (zh) * 2013-03-14 2018-12-04 惠普发展公司，有限责任合伙企业 检测物质的设备和制造这样的设备的方法
WO2017002854A1 (ja) * 2015-06-30 2017-01-05 富士通株式会社 ガスセンサ及びその使用方法
EP3350559B1 (en) * 2015-09-16 2021-01-06 Systems and Software Enterprises, LLC Enhanced liquid detection mechanisms for circuit cards
CN105424780B (zh) * 2015-11-26 2018-06-22 深圳代尔夫特电子科技有限公司 一种氮化镓传感器、制备方法和多传感器系统
JP6548178B2 (ja) * 2015-12-16 2019-07-24 パナソニックＩｐマネジメント株式会社 ガスセンサ及びガスセンシングシステム
FR3046243B1 (fr) * 2015-12-24 2017-12-22 Commissariat Energie Atomique Capteur nw-fet comportant au moins deux detecteurs distincts a nanofil de semi-conducteur
CN106290525B (zh) * 2016-08-04 2018-08-28 北京大学 一种带正面栅极调控的纳米线生物传感器件及其制备方法
JP2019190829A (ja) * 2016-08-31 2019-10-31 シャープ株式会社 ナノファイバーセンサ
JP6880930B2 (ja) * 2017-03-30 2021-06-02 セイコーエプソン株式会社 センサー
US11534347B2 (en) 2017-11-30 2022-12-27 Toray Industries, Inc. Circuit, detector, wireless communication device, moisture sensing system, diaper, notification system, and circuit manufacturing method
US10788375B2 (en) * 2017-12-07 2020-09-29 Tower Semiconductor Ltd. Apparatus, system and method of a temperature sensor
EP3540422B1 (en) * 2018-03-14 2024-01-03 Sciosense B.V. Monolithic gas sensor arrangement, manufacturing method and measurement method
EP3864400B1 (en) * 2018-11-20 2025-11-26 National Research Council Of Canada Sensor platform
EP3891497A4 (en) * 2018-12-05 2022-09-28 Femtodx DIFFERENTIAL SENSOR MEASUREMENT METHODS AND DEVICES
JP7455187B2 (ja) * 2019-07-12 2024-03-25 キューラブ・メディカル・リミテッド 電気化学ｆｅｔセンサ
US11840921B2 (en) * 2021-03-02 2023-12-12 Saudi Arabian Oil Company Detecting carbon dioxide leakage in the field
US11414986B1 (en) 2021-03-02 2022-08-16 Saudi Arabian Oil Company Detecting carbon dioxide leakage in the field
KR102811340B1 (ko) * 2022-06-15 2025-05-21 스웨센시 에이비 Fet 가스 센서 장치

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US7833801B2 (en) * 2002-12-03 2010-11-16 Hewlett-Packard Development Company, L.P. Free-standing nanowire method for detecting an analyte in a fluid
US8236595B2 (en) * 2006-08-11 2012-08-07 Agency For Science, Technology And Research Nanowire sensor, nanowire sensor array and method of fabricating the same
EP2378559A1 (en) * 2009-01-09 2011-10-19 Mitsumi Electric Co., Ltd. Field effect transistor, method for manufacturing same, and biosensor
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2749070C1 (ru) * 2020-09-17 2021-06-03 Общество С Ограниченной Ответственностью "Крокус Наноэлектроника" (Ооо "Крокус Наноэлектроника") Способ формирования активных структур для микроэлектронных устройств и микроэлектронное устройство, содержащее активные структуры
RU2764722C1 (ru) * 2021-08-04 2022-01-19 Общество С Ограниченной Ответственностью "Крокус Наноэлектроника" (Ооо "Крокус Наноэлектроника") Способ формирования активных структур для микроэлектронных устройств на кремниевой подложке и микроэлектронное устройство, содержащее сформированные активные структуры

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Publication number Publication date
JP6533465B2 (ja) 2019-06-19
EP2909617A2 (en) 2015-08-26
WO2014060894A3 (en) 2014-07-24
RU2015118169A (ru) 2016-12-10
MX356580B (es) 2018-06-05
US10126263B2 (en) 2018-11-13
CN104737009B (zh) 2018-07-13
BR112015008202A2 (pt) 2017-07-04
JP2015531491A (ja) 2015-11-02
WO2014060894A2 (en) 2014-04-24
US20160003770A1 (en) 2016-01-07
MX2015004671A (es) 2015-08-07
CN104737009A (zh) 2015-06-24
BR112015008202B1 (pt) 2021-02-09

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