CN105424780B - 一种氮化镓传感器、制备方法和多传感器系统 - Google Patents
一种氮化镓传感器、制备方法和多传感器系统 Download PDFInfo
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- G—PHYSICS
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- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
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CN201510845956.6A CN105424780B (zh) | 2015-11-26 | 2015-11-26 | 一种氮化镓传感器、制备方法和多传感器系统 |
PCT/CN2016/098989 WO2017088560A1 (zh) | 2015-11-26 | 2016-09-14 | 传感器、制备方法和多传感器系统 |
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Families Citing this family (25)
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CN105424780B (zh) * | 2015-11-26 | 2018-06-22 | 深圳代尔夫特电子科技有限公司 | 一种氮化镓传感器、制备方法和多传感器系统 |
CN105806913B (zh) * | 2016-05-17 | 2019-01-08 | 西安电子科技大学 | 具有集成式固态薄膜参比电极的GaN生物传感器及制作方法 |
CN107421994B (zh) * | 2016-05-24 | 2019-11-15 | 上海新昇半导体科技有限公司 | 基于二维电子气的低功耗氢气传感器及其制造方法 |
CN109690945A (zh) * | 2016-07-11 | 2019-04-26 | 艾皮乔尼克控股有限公司 | 用于血流动力学穿戴式装置的表面声波rfid感测器 |
US10720902B2 (en) | 2016-08-16 | 2020-07-21 | Epitronic Holdings Pte. Ltd | Surface acoustic wave RFID sensor for chemical detection and (bio)molecular diagnostics |
DK3501105T3 (da) * | 2016-08-22 | 2020-12-21 | Epitronic Holdings Pte Ltd | Akustisk overfladebølge-rfid-sensor til materiale- og strukturregistrering |
CN108931566A (zh) * | 2017-05-26 | 2018-12-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种传感器件及其制备方法以及测试所述传感器件的方法 |
CN107356649B (zh) * | 2017-06-14 | 2020-02-28 | 浙江大学 | 多路生物传感器及其制造方法 |
CN108400232B (zh) * | 2018-03-12 | 2020-02-21 | 浙江大学 | 一种基于镍锗合金/锗肖特基结的压力传感器件及其制造方法 |
CN109037050B (zh) * | 2018-07-17 | 2021-09-17 | 中山市华南理工大学现代产业技术研究院 | 基于TiN的GaN基HEMT无金欧姆接触电极的制备方法 |
CN109540987B (zh) * | 2018-11-09 | 2020-12-04 | 中山大学 | 基于凹槽结构的无参比电极GaN基pH传感器及其制备方法 |
CN109540988B (zh) * | 2018-11-09 | 2020-12-29 | 中山大学 | 基于叉指电极及凹槽结构的无参比电极GaN基pH传感器 |
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CN110459471B (zh) * | 2019-07-25 | 2020-09-04 | 中山大学 | 一种双栅结构GaN基pH传感器的制备方法 |
CN110988065A (zh) * | 2019-12-03 | 2020-04-10 | 中国科学院微电子研究所 | 氮化镓传感器件及其制备方法 |
CN111044575A (zh) * | 2019-12-03 | 2020-04-21 | 中国科学院微电子研究所 | GaN基集成器件及其制作方法 |
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CN111323458A (zh) * | 2020-04-02 | 2020-06-23 | 中国科学技术大学 | 一种基于hemt气体传感器的气体检测装置和方法 |
CN111551619B (zh) * | 2020-04-09 | 2022-05-10 | 济南大学 | 一种磺氨生物素修饰氮化铟糊电极传感器的制备方法 |
CN113108813A (zh) * | 2020-12-15 | 2021-07-13 | 南京工业职业技术大学 | 纳米图形化转移的氮化镓基柔性差分式无栅生物传感器 |
CN112713183B (zh) * | 2020-12-28 | 2022-06-10 | 光华临港工程应用技术研发(上海)有限公司 | 气体传感器的制备方法及气体传感器 |
CN112881485B (zh) * | 2021-01-14 | 2021-12-17 | 西安电子科技大学 | 一种用于检测次氯酸根的GaN传感器及检测方法 |
CN112924515A (zh) * | 2021-01-20 | 2021-06-08 | 南方科技大学 | 一种气体传感器及其制备方法 |
CN117147637B (zh) * | 2023-11-01 | 2024-01-23 | 合肥美镓传感科技有限公司 | 氮化镓气体传感器及其制备方法 |
CN117147023B (zh) * | 2023-11-01 | 2024-02-13 | 合肥美镓传感科技有限公司 | 氮化镓压力传感器及其制作方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4776944A (en) * | 1986-03-20 | 1988-10-11 | Jiri Janata | Chemical selective sensors utilizing admittance modulated membranes |
CN103760206A (zh) * | 2014-01-14 | 2014-04-30 | 江苏新广联科技股份有限公司 | 基于氮化镓材料的人体血糖测试芯片 |
CN203798771U (zh) * | 2014-01-14 | 2014-08-27 | 江苏新广联科技股份有限公司 | 基于氮化镓材料的人体血糖测试芯片 |
CN104701364A (zh) * | 2015-02-04 | 2015-06-10 | 厦门市三安集成电路有限公司 | 一种氮化镓基场效应晶体管及其制备方法 |
CN104737009A (zh) * | 2012-10-16 | 2015-06-24 | 皇家飞利浦有限公司 | 基于纳米线平台的宽动态范围流体传感器 |
CN205193005U (zh) * | 2015-11-26 | 2016-04-27 | 北京代尔夫特电子科技有限公司 | 一种氮化镓传感器和多传感器系统 |
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CN105424780B (zh) * | 2015-11-26 | 2018-06-22 | 深圳代尔夫特电子科技有限公司 | 一种氮化镓传感器、制备方法和多传感器系统 |
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- 2015-11-26 CN CN201510845956.6A patent/CN105424780B/zh active Active
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4776944A (en) * | 1986-03-20 | 1988-10-11 | Jiri Janata | Chemical selective sensors utilizing admittance modulated membranes |
CN104737009A (zh) * | 2012-10-16 | 2015-06-24 | 皇家飞利浦有限公司 | 基于纳米线平台的宽动态范围流体传感器 |
CN103760206A (zh) * | 2014-01-14 | 2014-04-30 | 江苏新广联科技股份有限公司 | 基于氮化镓材料的人体血糖测试芯片 |
CN203798771U (zh) * | 2014-01-14 | 2014-08-27 | 江苏新广联科技股份有限公司 | 基于氮化镓材料的人体血糖测试芯片 |
CN104701364A (zh) * | 2015-02-04 | 2015-06-10 | 厦门市三安集成电路有限公司 | 一种氮化镓基场效应晶体管及其制备方法 |
CN205193005U (zh) * | 2015-11-26 | 2016-04-27 | 北京代尔夫特电子科技有限公司 | 一种氮化镓传感器和多传感器系统 |
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Denomination of invention: Gallium nitride sensor, preparation method, and multi-sensor system Effective date of registration: 20231107 Granted publication date: 20180622 Pledgee: Beijing SME financing re Guarantee Co.,Ltd. Pledgor: Digital light Smart Technology Group Co.,Ltd. Registration number: Y2023990000543 |
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