CN111323458A - 一种基于hemt气体传感器的气体检测装置和方法 - Google Patents
一种基于hemt气体传感器的气体检测装置和方法 Download PDFInfo
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- CN111323458A CN111323458A CN202010252838.5A CN202010252838A CN111323458A CN 111323458 A CN111323458 A CN 111323458A CN 202010252838 A CN202010252838 A CN 202010252838A CN 111323458 A CN111323458 A CN 111323458A
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- gas
- gas detection
- gas sensor
- gallium nitride
- ultraviolet light
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- 238000001514 detection method Methods 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title abstract description 8
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 19
- 238000005259 measurement Methods 0.000 claims abstract description 16
- 239000007789 gas Substances 0.000 claims description 136
- 229910002601 GaN Inorganic materials 0.000 claims description 50
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 29
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 9
- 239000010980 sapphire Substances 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 10
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000005533 two-dimensional electron gas Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN202010252838.5A CN111323458A (zh) | 2020-04-02 | 2020-04-02 | 一种基于hemt气体传感器的气体检测装置和方法 |
PCT/CN2020/135620 WO2021196724A1 (zh) | 2020-04-02 | 2020-12-11 | 一种基于hemt气体传感器的气体检测装置和方法 |
Applications Claiming Priority (1)
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CN202010252838.5A CN111323458A (zh) | 2020-04-02 | 2020-04-02 | 一种基于hemt气体传感器的气体检测装置和方法 |
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Publication Number | Publication Date |
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CN111323458A true CN111323458A (zh) | 2020-06-23 |
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CN202010252838.5A Pending CN111323458A (zh) | 2020-04-02 | 2020-04-02 | 一种基于hemt气体传感器的气体检测装置和方法 |
Country Status (2)
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CN (1) | CN111323458A (zh) |
WO (1) | WO2021196724A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112525954A (zh) * | 2020-12-02 | 2021-03-19 | 西安交通大学 | 一种多孔氮化镓基室温气体传感器的制备方法 |
CN112903755A (zh) * | 2021-02-24 | 2021-06-04 | 太原理工大学 | 一种二氧化碳传感器及其制备方法 |
WO2021196724A1 (zh) * | 2020-04-02 | 2021-10-07 | 中国科学技术大学 | 一种基于hemt气体传感器的气体检测装置和方法 |
WO2022141172A1 (zh) * | 2020-12-28 | 2022-07-07 | 光华临港工程应用技术研发(上海)有限公司 | 气体传感器的制备方法及气体传感器 |
Family Cites Families (9)
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CN102297878B (zh) * | 2011-05-19 | 2013-07-31 | 浙江清华长三角研究院 | 一种快速检测挥发性氯代烃污染的电子鼻系统 |
CN104897741A (zh) * | 2014-03-03 | 2015-09-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaN基生物传感器及其制作方法 |
CN105424780B (zh) * | 2015-11-26 | 2018-06-22 | 深圳代尔夫特电子科技有限公司 | 一种氮化镓传感器、制备方法和多传感器系统 |
CN105806913B (zh) * | 2016-05-17 | 2019-01-08 | 西安电子科技大学 | 具有集成式固态薄膜参比电极的GaN生物传感器及制作方法 |
DK3500851T3 (da) * | 2016-08-16 | 2020-12-21 | Epitronic Holdings Pte Ltd | Akustisk overfladebølge-rfid-sensor til kemisk detektering og (bio)molekylær diagnose |
FR3057666B1 (fr) * | 2016-10-13 | 2019-08-02 | Peugeot Citroen Automobiles Sa | Capteur de detection a transistor a haute mobilite electronique selectif d’un composant gazeux ou liquide |
US10488364B2 (en) * | 2017-04-28 | 2019-11-26 | University Of Florida Research Foundation, Incorporated | Thermally stable ammonia gas sensor using ZnO-functionalized AlGaN/GaN heterostructure transistor |
CN211785287U (zh) * | 2020-04-02 | 2020-10-27 | 中国科学技术大学 | 一种基于hemt气体传感器的气体检测装置 |
CN111323458A (zh) * | 2020-04-02 | 2020-06-23 | 中国科学技术大学 | 一种基于hemt气体传感器的气体检测装置和方法 |
-
2020
- 2020-04-02 CN CN202010252838.5A patent/CN111323458A/zh active Pending
- 2020-12-11 WO PCT/CN2020/135620 patent/WO2021196724A1/zh active Application Filing
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021196724A1 (zh) * | 2020-04-02 | 2021-10-07 | 中国科学技术大学 | 一种基于hemt气体传感器的气体检测装置和方法 |
CN112525954A (zh) * | 2020-12-02 | 2021-03-19 | 西安交通大学 | 一种多孔氮化镓基室温气体传感器的制备方法 |
WO2022141172A1 (zh) * | 2020-12-28 | 2022-07-07 | 光华临港工程应用技术研发(上海)有限公司 | 气体传感器的制备方法及气体传感器 |
CN112903755A (zh) * | 2021-02-24 | 2021-06-04 | 太原理工大学 | 一种二氧化碳传感器及其制备方法 |
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Inventor after: Sun Haiding Inventor after: Xing Chong Inventor after: Xu Lei Inventor after: Zhang Haochen Inventor after: Song Kang Inventor after: Yang Lei Inventor after: Xie Dongcheng Inventor after: Liu Ruichen Inventor after: Xue Feng Inventor before: Sun Haiding Inventor before: Xing Chong Inventor before: Xu Lei Inventor before: Zhang Haochen Inventor before: Song Kang Inventor before: Xie Dongcheng Inventor before: Liu Ruichen Inventor before: Xue Feng |