DK3500851T3 - Akustisk overfladebølge-rfid-sensor til kemisk detektering og (bio)molekylær diagnose - Google Patents
Akustisk overfladebølge-rfid-sensor til kemisk detektering og (bio)molekylær diagnose Download PDFInfo
- Publication number
- DK3500851T3 DK3500851T3 DK17745209.1T DK17745209T DK3500851T3 DK 3500851 T3 DK3500851 T3 DK 3500851T3 DK 17745209 T DK17745209 T DK 17745209T DK 3500851 T3 DK3500851 T3 DK 3500851T3
- Authority
- DK
- Denmark
- Prior art keywords
- bio
- surface wave
- acoustic surface
- rfid sensor
- chemical detection
- Prior art date
Links
- 238000001514 detection method Methods 0.000 title 1
- 238000003745 diagnosis Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6406—Filters characterised by a particular frequency characteristic
- H03H9/6416—SAW matched filters, e.g. surface acoustic wave compressors, chirped or coded surface acoustic wave filters
- H03H9/642—SAW transducers details for remote interrogation systems, e.g. surface acoustic wave transducers details for ID-tags
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
- G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
- G01H11/08—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means using piezoelectric devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/022—Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/24—Probes
- G01N29/2462—Probes with waveguides, e.g. SAW devices
-
- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
- G10K11/36—Devices for manipulating acoustic surface waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/025—Change of phase or condition
- G01N2291/0256—Adsorption, desorption, surface mass change, e.g. on biosensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/04—Wave modes and trajectories
- G01N2291/042—Wave modes
- G01N2291/0423—Surface waves, e.g. Rayleigh waves, Love waves
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Acoustics & Sound (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Analytical Chemistry (AREA)
- Pathology (AREA)
- Immunology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Multimedia (AREA)
- Manufacturing & Machinery (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
- Apparatus Associated With Microorganisms And Enzymes (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662375683P | 2016-08-16 | 2016-08-16 | |
US201662375711P | 2016-08-16 | 2016-08-16 | |
US201662375656P | 2016-08-16 | 2016-08-16 | |
US201662375670P | 2016-08-16 | 2016-08-16 | |
US201662375697P | 2016-08-16 | 2016-08-16 | |
PCT/IB2017/054141 WO2018033809A1 (en) | 2016-08-16 | 2017-07-10 | Surface acoustic wave rfid sensor for chemical detection and (bio)molecular diagnostics |
Publications (1)
Publication Number | Publication Date |
---|---|
DK3500851T3 true DK3500851T3 (da) | 2020-12-21 |
Family
ID=59409598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK17745209.1T DK3500851T3 (da) | 2016-08-16 | 2017-07-10 | Akustisk overfladebølge-rfid-sensor til kemisk detektering og (bio)molekylær diagnose |
Country Status (6)
Country | Link |
---|---|
US (1) | US10720902B2 (da) |
EP (1) | EP3500851B1 (da) |
CN (1) | CN110023748B (da) |
DK (1) | DK3500851T3 (da) |
ES (1) | ES2847890T3 (da) |
WO (1) | WO2018033809A1 (da) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10848127B2 (en) * | 2016-09-30 | 2020-11-24 | Intel Corporation | Film bulk acoustic resonator (FBAR) RF filter having epitaxial layers |
CN110718589B (zh) * | 2018-07-12 | 2024-04-16 | 纳姆实验有限责任公司 | 具有半导体器件的电子电路的异质结构 |
US11309450B2 (en) | 2018-12-20 | 2022-04-19 | Analog Devices, Inc. | Hybrid semiconductor photodetector assembly |
US11302835B2 (en) | 2019-01-08 | 2022-04-12 | Analog Devices, Inc. | Semiconductor photodetector assembly |
WO2021021719A1 (en) | 2019-07-31 | 2021-02-04 | QXONIX Inc. | Bulk acoustic wave (baw) resonator structures, devices and systems |
TWI749369B (zh) * | 2019-09-12 | 2021-12-11 | 黃知澍 | N-face III族/氮化物磊晶結構及其主動元件與其閘極保護元件 |
CN111323458A (zh) * | 2020-04-02 | 2020-06-23 | 中国科学技术大学 | 一种基于hemt气体传感器的气体检测装置和方法 |
CN111570208B (zh) * | 2020-05-11 | 2021-08-06 | 浙江大学 | 表面波时频调控的局域化异质形复合材料制备装置及方法 |
BR102020010345A2 (pt) * | 2020-05-22 | 2021-12-07 | Fundação Universidade Federal De São Carlos | Leitor e sensor de microrganismos baseados em alterações de propriedades eletromagnéticas de etiqueta rfid |
US11898987B2 (en) * | 2020-09-10 | 2024-02-13 | Raytheon Company | SAW-based hydrogel testing for detecting viruses or other antigens |
CN112366228B (zh) * | 2020-10-26 | 2024-02-20 | 苏州科技大学 | 一种自激励电阻计时器及其制备方法 |
IT202100000293A1 (it) * | 2021-01-08 | 2022-07-08 | St Microelectronics Srl | Dispositivo e metodo di rilevamento di una variazione di ambiente operativo per un apparecchio elettronico |
CN112881485B (zh) * | 2021-01-14 | 2021-12-17 | 西安电子科技大学 | 一种用于检测次氯酸根的GaN传感器及检测方法 |
CN112668209B (zh) * | 2021-01-29 | 2024-02-02 | 沈阳理工大学 | 一种基于电荷传递模型的聚吡咯执行器力学仿真方法 |
WO2022196713A1 (ja) * | 2021-03-19 | 2022-09-22 | 京セラ株式会社 | 測定システム、解析プログラムおよび測定方法 |
US11874189B2 (en) * | 2021-07-02 | 2024-01-16 | Applied Materials, Inc. | MEMS resonator sensor substrate for plasma, temperature, stress, or deposition sensing |
CN113663646A (zh) * | 2021-07-19 | 2021-11-19 | 中国计量大学 | 一种宽谱特异性抗体修饰的磁性金属有机骨架材料的制备方法与应用 |
US20230044262A1 (en) * | 2021-08-05 | 2023-02-09 | Applied Materials, Inc. | Microwave resonator array for plasma diagnostics |
US12003045B2 (en) | 2021-10-20 | 2024-06-04 | Samsung Electronics Co., Ltd. | Wireless interconnect for high rate data transfer |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006295126A (ja) * | 2005-03-15 | 2006-10-26 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体素子およびエピタキシャル基板 |
US20070139165A1 (en) * | 2005-12-19 | 2007-06-21 | Honeywell International, Inc. | Acoustic wave device used as RFID and as sensor |
US8313968B2 (en) | 2007-08-21 | 2012-11-20 | Amal Elgawadi | Fabrication of GaN and III-nitride alloys freestanding epilayers membranes using a nonbonding laser |
WO2009137768A2 (en) * | 2008-05-09 | 2009-11-12 | University Of Florida Research Foundation, Inc. | Oxygen and carbon dioxide sensing |
EP2799852A1 (en) * | 2013-04-29 | 2014-11-05 | Stichting IMEC Nederland | 2DEG-based sensor and device for ECG sensing |
CN105322005B (zh) * | 2015-04-17 | 2018-07-06 | 苏州捷芯威半导体有限公司 | 一种半导体器件及其制作方法 |
CN105424780B (zh) | 2015-11-26 | 2018-06-22 | 深圳代尔夫特电子科技有限公司 | 一种氮化镓传感器、制备方法和多传感器系统 |
US10326426B2 (en) * | 2016-01-22 | 2019-06-18 | Qorvo Us, Inc. | Guided wave devices with selectively loaded piezoelectric layers |
-
2017
- 2017-07-10 EP EP17745209.1A patent/EP3500851B1/en active Active
- 2017-07-10 DK DK17745209.1T patent/DK3500851T3/da active
- 2017-07-10 WO PCT/IB2017/054141 patent/WO2018033809A1/en active Search and Examination
- 2017-07-10 ES ES17745209T patent/ES2847890T3/es active Active
- 2017-07-10 US US16/326,175 patent/US10720902B2/en active Active
- 2017-07-10 CN CN201780063708.3A patent/CN110023748B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP3500851A1 (en) | 2019-06-26 |
US10720902B2 (en) | 2020-07-21 |
CN110023748B (zh) | 2022-02-08 |
CN110023748A (zh) | 2019-07-16 |
ES2847890T3 (es) | 2021-08-04 |
WO2018033809A1 (en) | 2018-02-22 |
EP3500851B1 (en) | 2020-09-16 |
US20190187105A1 (en) | 2019-06-20 |
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