MX356580B - Sensor de fluido de amplio intervalo dinámico basado en una plataforma de nanoalambres. - Google Patents

Sensor de fluido de amplio intervalo dinámico basado en una plataforma de nanoalambres.

Info

Publication number
MX356580B
MX356580B MX2015004671A MX2015004671A MX356580B MX 356580 B MX356580 B MX 356580B MX 2015004671 A MX2015004671 A MX 2015004671A MX 2015004671 A MX2015004671 A MX 2015004671A MX 356580 B MX356580 B MX 356580B
Authority
MX
Mexico
Prior art keywords
nanowires
dynamic range
sensor based
wide dynamic
fluid sensor
Prior art date
Application number
MX2015004671A
Other languages
English (en)
Other versions
MX2015004671A (es
Inventor
Hendrik Klootwijk Johan
Mulder Marcel
Original Assignee
Koninklijke Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Nv filed Critical Koninklijke Philips Nv
Publication of MX2015004671A publication Critical patent/MX2015004671A/es
Publication of MX356580B publication Critical patent/MX356580B/es

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004—Gaseous mixtures, e.g. polluted air
    • G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G01N33/0031—General constructional details of gas analysers, e.g. portable test equipment concerning the detector comprising two or more sensors, e.g. a sensor array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Power Engineering (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Thin Film Transistor (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

Un dispositivo (100) para la detección de una sustancia en una muestra de fluido, el dispositivo comprende: un sustrato (102); una capa aislante (104) dispuesta sobre el sustrato (102); una pluralidad de nanoalambres semiconductores eléctricamente accesibles individualmente (106, 108, 110) dispuestos sobre la capa aislante (104) , cada uno de la pluralidad de nanoalambres está cubierta por un material aislante (202, 204, 206) y dispuestos para detectar la sustancia a través de una característica eléctrica del nanoalambre; y un compartimiento de muestra (118) para proporcionar la muestra de fluido en contacto con cada uno de la pluralidad de nanoalambres; en donde para cada uno de la pluralidad de nanoalambres (106, 108, 110), por lo menos uno de la dimensión transversal, el espesor del aislante y el tipo del material aislante se selecciona de tal manera que cada uno de los nanoalambres tiene un intervalo de detección diferente, y de tal manera que el intervalo dinámico del dispositivo es mayor que el intervalo dinámico de cada uno de los nanoalambres individuales.
MX2015004671A 2012-10-16 2013-10-07 Sensor de fluido de amplio intervalo dinámico basado en una plataforma de nanoalambres. MX356580B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261714418P 2012-10-16 2012-10-16
PCT/IB2013/059160 WO2014060894A2 (en) 2012-10-16 2013-10-07 Wide dynamic range fluid sensor based on nanowire platform

Publications (2)

Publication Number Publication Date
MX2015004671A MX2015004671A (es) 2015-08-07
MX356580B true MX356580B (es) 2018-06-05

Family

ID=49917673

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2015004671A MX356580B (es) 2012-10-16 2013-10-07 Sensor de fluido de amplio intervalo dinámico basado en una plataforma de nanoalambres.

Country Status (8)

Country Link
US (1) US10126263B2 (es)
EP (1) EP2909617A2 (es)
JP (1) JP6533465B2 (es)
CN (1) CN104737009B (es)
BR (1) BR112015008202B1 (es)
MX (1) MX356580B (es)
RU (1) RU2638130C2 (es)
WO (1) WO2014060894A2 (es)

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Also Published As

Publication number Publication date
US10126263B2 (en) 2018-11-13
BR112015008202A2 (pt) 2017-07-04
EP2909617A2 (en) 2015-08-26
MX2015004671A (es) 2015-08-07
CN104737009A (zh) 2015-06-24
BR112015008202B1 (pt) 2021-02-09
US20160003770A1 (en) 2016-01-07
WO2014060894A3 (en) 2014-07-24
RU2015118169A (ru) 2016-12-10
JP6533465B2 (ja) 2019-06-19
WO2014060894A2 (en) 2014-04-24
JP2015531491A (ja) 2015-11-02
CN104737009B (zh) 2018-07-13
RU2638130C2 (ru) 2017-12-11

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