CN104737009B - 基于纳米线平台的宽动态范围流体传感器 - Google Patents

基于纳米线平台的宽动态范围流体传感器 Download PDF

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CN104737009B
CN104737009B CN201380053956.1A CN201380053956A CN104737009B CN 104737009 B CN104737009 B CN 104737009B CN 201380053956 A CN201380053956 A CN 201380053956A CN 104737009 B CN104737009 B CN 104737009B
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nanowires
nanowire
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substance
sample
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CN104737009A (zh
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J·H·克鲁特维杰克
M·马尔德
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Koninklijke Philips NV
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004—Gaseous mixtures, e.g. polluted air
    • G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G01N33/0031—General constructional details of gas analysers, e.g. portable test equipment concerning the detector comprising two or more sensors, e.g. a sensor array
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Molecular Biology (AREA)
  • Nanotechnology (AREA)
  • Combustion & Propulsion (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Thin Film Transistor (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
CN201380053956.1A 2012-10-16 2013-10-07 基于纳米线平台的宽动态范围流体传感器 Active CN104737009B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261714418P 2012-10-16 2012-10-16
US61/714,418 2012-10-16
PCT/IB2013/059160 WO2014060894A2 (en) 2012-10-16 2013-10-07 Wide dynamic range fluid sensor based on nanowire platform

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CN104737009A CN104737009A (zh) 2015-06-24
CN104737009B true CN104737009B (zh) 2018-07-13

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US (1) US10126263B2 (enExample)
EP (1) EP2909617A2 (enExample)
JP (1) JP6533465B2 (enExample)
CN (1) CN104737009B (enExample)
BR (1) BR112015008202B1 (enExample)
MX (1) MX356580B (enExample)
RU (1) RU2638130C2 (enExample)
WO (1) WO2014060894A2 (enExample)

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CN106290525B (zh) * 2016-08-04 2018-08-28 北京大学 一种带正面栅极调控的纳米线生物传感器件及其制备方法
JP2019190829A (ja) * 2016-08-31 2019-10-31 シャープ株式会社 ナノファイバーセンサ
JP6880930B2 (ja) * 2017-03-30 2021-06-02 セイコーエプソン株式会社 センサー
US11534347B2 (en) 2017-11-30 2022-12-27 Toray Industries, Inc. Circuit, detector, wireless communication device, moisture sensing system, diaper, notification system, and circuit manufacturing method
US10788375B2 (en) * 2017-12-07 2020-09-29 Tower Semiconductor Ltd. Apparatus, system and method of a temperature sensor
EP3540422B1 (en) * 2018-03-14 2024-01-03 Sciosense B.V. Monolithic gas sensor arrangement, manufacturing method and measurement method
EP3864400B1 (en) * 2018-11-20 2025-11-26 National Research Council Of Canada Sensor platform
EP3891497A4 (en) * 2018-12-05 2022-09-28 Femtodx DIFFERENTIAL SENSOR MEASUREMENT METHODS AND DEVICES
JP7455187B2 (ja) * 2019-07-12 2024-03-25 キューラブ・メディカル・リミテッド 電気化学ｆｅｔセンサ
RU2749070C1 (ru) * 2020-09-17 2021-06-03 Общество С Ограниченной Ответственностью "Крокус Наноэлектроника" (Ооо "Крокус Наноэлектроника") Способ формирования активных структур для микроэлектронных устройств и микроэлектронное устройство, содержащее активные структуры
US11840921B2 (en) * 2021-03-02 2023-12-12 Saudi Arabian Oil Company Detecting carbon dioxide leakage in the field
US11414986B1 (en) 2021-03-02 2022-08-16 Saudi Arabian Oil Company Detecting carbon dioxide leakage in the field
RU2764722C1 (ru) * 2021-08-04 2022-01-19 Общество С Ограниченной Ответственностью "Крокус Наноэлектроника" (Ооо "Крокус Наноэлектроника") Способ формирования активных структур для микроэлектронных устройств на кремниевой подложке и микроэлектронное устройство, содержащее сформированные активные структуры
KR102811340B1 (ko) * 2022-06-15 2025-05-21 스웨센시 에이비 Fet 가스 센서 장치

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Also Published As

Publication number Publication date
JP6533465B2 (ja) 2019-06-19
EP2909617A2 (en) 2015-08-26
WO2014060894A3 (en) 2014-07-24
RU2015118169A (ru) 2016-12-10
MX356580B (es) 2018-06-05
US10126263B2 (en) 2018-11-13
RU2638130C2 (ru) 2017-12-11
BR112015008202A2 (pt) 2017-07-04
JP2015531491A (ja) 2015-11-02
WO2014060894A2 (en) 2014-04-24
US20160003770A1 (en) 2016-01-07
MX2015004671A (es) 2015-08-07
CN104737009A (zh) 2015-06-24
BR112015008202B1 (pt) 2021-02-09

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