RU2488188C2 - Способ и устройство нанесения нанорисунка на большие площади - Google Patents

Способ и устройство нанесения нанорисунка на большие площади Download PDF

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Publication number
RU2488188C2
RU2488188C2 RU2010134893/28A RU2010134893A RU2488188C2 RU 2488188 C2 RU2488188 C2 RU 2488188C2 RU 2010134893/28 A RU2010134893/28 A RU 2010134893/28A RU 2010134893 A RU2010134893 A RU 2010134893A RU 2488188 C2 RU2488188 C2 RU 2488188C2
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Russia
Prior art keywords
substrate
cylinder
mask
radiation
rotatable
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RU2010134893/28A
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English (en)
Russian (ru)
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RU2010134893A (ru
Inventor
Борис КОБРИН
Игорь ЛАНДАУ
Борис ВОЛЬФ
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Ролит, Инк.
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
    • B29C33/424—Moulding surfaces provided with means for marking or patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
RU2010134893/28A 2008-01-22 2008-11-18 Способ и устройство нанесения нанорисунка на большие площади RU2488188C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US1186108P 2008-01-22 2008-01-22
US61/011,861 2008-01-22
PCT/US2008/012901 WO2009094009A1 (en) 2008-01-22 2008-11-18 Large area nanopatterning method and apparatus

Publications (2)

Publication Number Publication Date
RU2010134893A RU2010134893A (ru) 2012-02-27
RU2488188C2 true RU2488188C2 (ru) 2013-07-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU2010134893/28A RU2488188C2 (ru) 2008-01-22 2008-11-18 Способ и устройство нанесения нанорисунка на большие площади

Country Status (10)

Country Link
EP (1) EP2238608A4 (es)
JP (1) JP5102879B2 (es)
KR (1) KR20110008159A (es)
CN (2) CN105171985A (es)
AU (1) AU2008348353A1 (es)
CA (1) CA2709718A1 (es)
MX (1) MX2010007954A (es)
RU (1) RU2488188C2 (es)
TW (1) TWI518027B (es)
WO (1) WO2009094009A1 (es)

Cited By (2)

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RU2593463C2 (ru) * 2013-12-23 2016-08-10 Станислав Викторович Хартов Способ получения проводящих сетчатых микро- и наноструктур и структура для его реализации
RU2809344C1 (ru) * 2023-01-27 2023-12-11 Альберт Георгиевич Битуев Способ изготовления микросхем

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US8518633B2 (en) 2008-01-22 2013-08-27 Rolith Inc. Large area nanopatterning method and apparatus
US8192920B2 (en) 2008-04-26 2012-06-05 Rolith Inc. Lithography method
US8334217B2 (en) 2008-06-09 2012-12-18 Rolith Inc. Material deposition over template
CN101692151B (zh) * 2009-09-17 2011-12-28 复旦大学 一种基于软模板纳米压印技术的硅纳米线制作方法
US9465296B2 (en) * 2010-01-12 2016-10-11 Rolith, Inc. Nanopatterning method and apparatus
AU2011205582A1 (en) * 2010-01-12 2012-08-30 Rolith, Inc. Nanopatterning method and apparatus
CN101846880B (zh) * 2010-05-12 2012-05-30 上海交通大学 激发表面等离子体的纳米光刻方法
AT510217B1 (de) * 2010-08-13 2013-12-15 Hueck Folien Gmbh Verfahren zur partiellen mattierung von uv-lackschichten
EP2609467A4 (en) * 2010-08-23 2014-07-30 Rolith Inc MASK FOR NEAR FIELD LITHOGRAPHY AND ITS MANUFACTURE
US9187839B2 (en) * 2010-10-07 2015-11-17 Michael Sheehy Process for the manufacture of sealed anodized aluminum components
CN102169819B (zh) * 2011-01-14 2013-01-30 中国科学院物理研究所 一种制备纳米金属结构的方法
WO2013049367A2 (en) * 2011-09-30 2013-04-04 Rolith, Inc. Plasmonic lithography using phase mask
KR101260221B1 (ko) * 2011-12-01 2013-05-06 주식회사 엘지화학 마스크
US9720330B2 (en) * 2012-04-17 2017-08-01 The Regents Of The University Of Michigan Methods for making micro- and nano-scale conductive grids for transparent electrodes and polarizers by roll to roll optical lithography
KR102243425B1 (ko) * 2012-05-02 2021-04-22 메타머트리얼 테크놀러지스 유에스에이, 인크. 원통형 고분자 마스크 및 제작 방법
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US20150336301A1 (en) 2012-05-02 2015-11-26 Rolith, Inc. Cylindrical polymer mask and method of fabrication
US9782917B2 (en) 2013-01-31 2017-10-10 Metamaterial Technologies Usa, Inc. Cylindrical master mold and method of fabrication
CN102759855A (zh) * 2012-07-17 2012-10-31 西安交通大学 一种单码道绝对式光栅尺辊压印模具制造方法
TWI474432B (zh) * 2012-11-15 2015-02-21 Lextar Electronics Corp 晶粒定位裝置、具有晶粒定位裝置的晶粒定位系統與發光二極體顯示板的晶粒定位方法
US9244356B1 (en) 2014-04-03 2016-01-26 Rolith, Inc. Transparent metal mesh and method of manufacture
KR101636696B1 (ko) 2014-05-23 2016-07-06 연세대학교 산학협력단 플렉서블 나노박막 광구조를 이용하는 가변 대면적 나노이미징 광학헤드 및 이미징 장치
WO2015183243A1 (en) 2014-05-27 2015-12-03 Rolith, Inc. Anti-counterfeiting features and methods of fabrication and detection
KR102252049B1 (ko) 2014-08-04 2021-05-18 삼성디스플레이 주식회사 노광용 마스크, 이의 제조 방법 및 이를 이용한 기판의 제조 방법
KR102240761B1 (ko) 2015-01-29 2021-04-15 삼성디스플레이 주식회사 가변 마스크
WO2017030151A1 (ja) * 2015-08-19 2017-02-23 国立大学法人 東京大学 母型の製造方法
TWI579640B (zh) * 2015-10-15 2017-04-21 許銘案 薄膜光罩、貼合輔具、貼合與曝光輔助裝置及將一薄膜光罩貼合於一曲面基板的方法
CN106773531B (zh) * 2017-01-03 2020-06-16 京东方科技集团股份有限公司 一种纳米压印装置中的压印滚轮及纳米压印装置
CN106547044B (zh) * 2017-01-24 2019-03-01 深圳市华星光电技术有限公司 一种偏光片的加工设备及制造方法
CN106647192A (zh) * 2017-03-10 2017-05-10 深圳市华星光电技术有限公司 曝光设备
CN109390263A (zh) * 2017-08-07 2019-02-26 财团法人工业技术研究院 元件扩距转移方法及实施此转移方法的设备
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KR102096606B1 (ko) * 2018-08-29 2020-04-02 부산대학교 산학협력단 실린더 표면의 나노구조 임프린트를 위한 소프트 몰드 제조 및 이를 이용한 나노임프린트 공정 방법
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CN109668631B (zh) * 2018-12-11 2021-06-01 中国科学院光电技术研究所 一种大面积、低成本的超导纳米线单光子探测器的制备方法
TWI765276B (zh) * 2020-06-12 2022-05-21 光群雷射科技股份有限公司 透鏡的轉印式製造方法及透鏡轉印層的製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2593463C2 (ru) * 2013-12-23 2016-08-10 Станислав Викторович Хартов Способ получения проводящих сетчатых микро- и наноструктур и структура для его реализации
RU2809344C1 (ru) * 2023-01-27 2023-12-11 Альберт Георгиевич Битуев Способ изготовления микросхем

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Publication number Publication date
MX2010007954A (es) 2010-11-05
CN105171985A (zh) 2015-12-23
CN101911249A (zh) 2010-12-08
EP2238608A4 (en) 2012-02-22
TWI518027B (zh) 2016-01-21
KR20110008159A (ko) 2011-01-26
AU2008348353A1 (en) 2009-07-30
JP5102879B2 (ja) 2012-12-19
CA2709718A1 (en) 2009-07-30
WO2009094009A1 (en) 2009-07-30
TW200932666A (en) 2009-08-01
RU2010134893A (ru) 2012-02-27
EP2238608A1 (en) 2010-10-13
JP2011526069A (ja) 2011-09-29

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